GB1070991A - Processes for the growth of crystalline bodies - Google Patents

Processes for the growth of crystalline bodies

Info

Publication number
GB1070991A
GB1070991A GB3521/65A GB352165A GB1070991A GB 1070991 A GB1070991 A GB 1070991A GB 3521/65 A GB3521/65 A GB 3521/65A GB 352165 A GB352165 A GB 352165A GB 1070991 A GB1070991 A GB 1070991A
Authority
GB
United Kingdom
Prior art keywords
substrate
substance
carrier
gallium
absorbed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3521/65A
Other languages
English (en)
Inventor
William Carlton Ellis
William Gardner Pfann
Richard Siegfried Wagner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB1070991A publication Critical patent/GB1070991A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/17—Vapor-liquid-solid

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
GB3521/65A 1964-01-28 1965-01-27 Processes for the growth of crystalline bodies Expired GB1070991A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US340701A US3346414A (en) 1964-01-28 1964-01-28 Vapor-liquid-solid crystal growth technique

Publications (1)

Publication Number Publication Date
GB1070991A true GB1070991A (en) 1967-06-07

Family

ID=23334570

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3521/65A Expired GB1070991A (en) 1964-01-28 1965-01-27 Processes for the growth of crystalline bodies

Country Status (5)

Country Link
US (1) US3346414A (ko)
BE (1) BE658975A (ko)
DE (1) DE1290921B (ko)
GB (1) GB1070991A (ko)
NL (1) NL6500600A (ko)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3446659A (en) * 1966-09-16 1969-05-27 Texas Instruments Inc Apparatus and process for growing noncontaminated thermal oxide on silicon
US3462320A (en) * 1966-11-21 1969-08-19 Bell Telephone Labor Inc Solution growth of nitrogen doped gallium phosphide
US3493431A (en) * 1966-11-25 1970-02-03 Bell Telephone Labor Inc Vapor-liquid-solid crystal growth technique
NL143436B (nl) * 1966-12-14 1974-10-15 Philips Nv Werkwijze voor het vervaardigen van draadvormige siliciumcarbide kristallen en voorwerpen geheel of voor een deel bestaande uit deze kristallen.
US3476593A (en) * 1967-01-24 1969-11-04 Fairchild Camera Instr Co Method of forming gallium arsenide films by vacuum deposition techniques
NL6705847A (ko) * 1967-04-26 1968-10-28
US3505127A (en) * 1967-09-21 1970-04-07 Bell Telephone Labor Inc Vapor-liquid-solid crystal growth technique for the production of needle-like single crystals
US3536538A (en) * 1968-03-29 1970-10-27 Bell Telephone Labor Inc Crystal growth technique
NL6805300A (ko) * 1968-04-13 1969-10-15
US3617371A (en) * 1968-11-13 1971-11-02 Hewlett Packard Co Method and means for producing semiconductor material
US4058418A (en) * 1974-04-01 1977-11-15 Solarex Corporation Fabrication of thin film solar cells utilizing epitaxial deposition onto a liquid surface to obtain lateral growth
US4155781A (en) * 1976-09-03 1979-05-22 Siemens Aktiengesellschaft Method of manufacturing solar cells, utilizing single-crystal whisker growth
US4132571A (en) * 1977-02-03 1979-01-02 International Business Machines Corporation Growth of polycrystalline semiconductor film with intermetallic nucleating layer
FR2407892A1 (fr) * 1977-11-04 1979-06-01 Rhone Poulenc Ind Procede de fabrication de silicium pour la conversion photovoltaique
US4789537A (en) * 1985-12-30 1988-12-06 The United States Of America As Represented By The United States Department Of Energy Prealloyed catalyst for growing silicon carbide whiskers
US4702901A (en) * 1986-03-12 1987-10-27 The United States Of America As Represented By The United States Department Of Energy Process for growing silicon carbide whiskers by undercooling
JPH0782996B2 (ja) * 1986-03-28 1995-09-06 キヤノン株式会社 結晶の形成方法
JP2670442B2 (ja) * 1986-03-31 1997-10-29 キヤノン株式会社 結晶の形成方法
US5322711A (en) * 1989-07-21 1994-06-21 Minnesota Mining And Manufacturing Company Continuous method of covering inorganic fibrous material with particulates
US5405654A (en) * 1989-07-21 1995-04-11 Minnesota Mining And Manufacturing Company Self-cleaning chemical vapor deposition apparatus and method
US5364660A (en) * 1989-07-21 1994-11-15 Minnesota Mining And Manufacturing Company Continuous atmospheric pressure CVD coating of fibers
US7686886B2 (en) * 2006-09-26 2010-03-30 International Business Machines Corporation Controlled shape semiconductor layer by selective epitaxy under seed structure
US7449065B1 (en) 2006-12-02 2008-11-11 Ohio Aerospace Institute Method for the growth of large low-defect single crystals
US8153482B2 (en) * 2008-09-22 2012-04-10 Sharp Laboratories Of America, Inc. Well-structure anti-punch-through microwire device
WO2015143206A1 (en) 2014-03-19 2015-09-24 Solar-Tectic, Llc Method of making ceramic glass

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE509317A (ko) * 1951-03-07 1900-01-01
DE1042553B (de) * 1953-09-25 1958-11-06 Int Standard Electric Corp Verfahren zur Herstellung von Silicium grosser Reinheit
BE544843A (ko) * 1955-02-25
BE547665A (ko) * 1955-06-28
DE1048638B (de) * 1957-07-02 1959-01-15 Siemens &. Halske Aktiengesellschaft, Berlin und München Verfahren zur Herstellung von Halbleitereinkristallen, insbesondere von Silizium durch thermische Zersetzung oder Reduktion

Also Published As

Publication number Publication date
NL6500600A (ko) 1965-07-29
DE1290921B (de) 1969-03-20
BE658975A (ko) 1965-05-17
US3346414A (en) 1967-10-10

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