BE547665A - - Google Patents

Info

Publication number: BE547665A
Authority: BE; Belgium

Application number

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1955-06-28

Publication of BE547665A publication Critical patent/BE547665A/xx

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/06—Epitaxial-layer growth by reactive sputtering
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02609—Crystal orientation
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current

Landscapes

Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Chemical & Material Sciences (AREA)
Materials Engineering (AREA)
Chemical Kinetics & Catalysis (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Crystallography & Structural Chemistry (AREA)
Mechanical Engineering (AREA)
General Chemical & Material Sciences (AREA)
Electrodes Of Semiconductors (AREA)

BE547665D 1955-06-28 BE547665A (ko)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US518554A US2802759A (en)	1955-06-28	1955-06-28	Method for producing evaporation fused junction semiconductor devices

Publications (1)

Publication Number	Publication Date
BE547665A true BE547665A (ko)

Family

ID=24064448

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
BE547665D BE547665A (ko)	1955-06-28

Country Status (3)

Country	Link
US (1)	US2802759A (ko)
BE (1)	BE547665A (ko)
FR (1)	FR1151572A (ko)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US2935478A (en) *	1955-09-06	1960-05-03	Gen Electric Co Ltd	Production of semi-conductor bodies
US2879188A (en) *	1956-03-05	1959-03-24	Westinghouse Electric Corp	Processes for making transistors
DE1129625B (de) *	1958-05-23	1962-05-17	Telefunken Patent	Drifttransistor, bei dem der spezifische Widerstand in der Basiszone von der Emitter-zur Kollektorzone zunimmt
NL249198A (ko) *	1959-03-09
US3063871A (en) *	1959-10-23	1962-11-13	Merck & Co Inc	Production of semiconductor films
NL130054C (ko) *	1960-02-12
DE1273497B (de) *	1960-03-04	1968-07-25	Siemens Ag	Verfahren zum Aufbringen von extrem duennen, homogenen Metallschichten auf die Oberflaeche von Halbleiterkristallen
NL278654A (ko) *	1961-06-08
US3170825A (en) *	1961-10-02	1965-02-23	Merck & Co Inc	Delaying the introduction of impurities when vapor depositing an epitaxial layer on a highly doped substrate
BE627948A (ko) *	1962-02-02
DE1202616B (de) *	1962-02-23	1965-10-07	Siemens Ag	Verfahren zum Entfernen der bei der Epitaxie auf dem Heizer abgeschiedenen Halbleiterschicht
US3257247A (en) *	1962-10-17	1966-06-21	Texas Instruments Inc	Method of forming a p-n junction
NL291753A (ko) *	1963-04-19
US3346414A (en) *	1964-01-28	1967-10-10	Bell Telephone Labor Inc	Vapor-liquid-solid crystal growth technique
US3338760A (en) *	1964-06-03	1967-08-29	Massachusetts Inst Technology	Method of making a heterojunction semiconductor device
DE1281035B (de) *	1965-01-22	1968-10-24	Itt Ind Ges Mit Beschraenkter	Verfahren zum Anbringen einer Kontaktschicht auf einem Siliziumhalbleiterkoerper
EP0313000B1 (de) *	1987-10-21	1998-05-06	Siemens Aktiengesellschaft	Verfahren zum Herstellen eines Bipolartransistors mit isolierter Gateelektrode
US5358574A (en) *	1993-11-22	1994-10-25	Midwest Research Institute	Dry texturing of solar cells
US5897331A (en) *	1996-11-08	1999-04-27	Midwest Research Institute	High efficiency low cost thin film silicon solar cell design and method for making

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
NL82014C (ko) *	1949-11-30
US2695852A (en) *	1952-02-15	1954-11-30	Bell Telephone Labor Inc	Fabrication of semiconductors for signal translating devices
US2736847A (en) *	1954-05-10	1956-02-28	Hughes Aircraft Co	Fused-junction silicon diodes

0
- BE BE547665D patent/BE547665A/xx unknown
1955
- 1955-06-28 US US518554A patent/US2802759A/en not_active Expired - Lifetime
1956
- 1956-05-07 FR FR1151572D patent/FR1151572A/fr not_active Expired

Also Published As

Publication number	Publication date
FR1151572A (fr)	1958-01-31
US2802759A (en)	1957-08-13

Publication	Publication Date	Title
AT198143B (ko)	1958-06-10
DE1040163C2 (ko)	1959-03-19
AT194324B (ko)	1958-01-10
AT198671B (ko)	1958-07-25
AT197696B (ko)	1958-05-10
AT193805B (ko)	1957-12-10
AT198478B (ko)	1958-07-10
AT194860B (ko)	1958-01-25
AT195202B (ko)	1958-01-25
AT197933B (ko)	1958-05-27
AT194664B (ko)	1958-01-10
AT197113B (ko)	1958-04-10
AT195039B (ko)	1958-01-25
AT195329B (ko)	1958-01-25
AT197645B (ko)	1958-05-10
AT197899B (ko)	1958-05-27
AT198283B (ko)	1958-06-25
AT194962B (ko)	1958-01-25
AT197200B (ko)	1958-04-10
AT198124B (ko)	1958-06-10
AT195450B (ko)	1958-02-10
AT193797B (ko)	1957-12-10
AT197742B (ko)	1958-05-27
AT195570B (ko)	1958-02-10
AT198360B (ko)	1958-06-25