GB1054587A - - Google Patents
Info
- Publication number
- GB1054587A GB1054587A GB1054587DA GB1054587A GB 1054587 A GB1054587 A GB 1054587A GB 1054587D A GB1054587D A GB 1054587DA GB 1054587 A GB1054587 A GB 1054587A
- Authority
- GB
- United Kingdom
- Prior art keywords
- pit
- germanium
- wafer
- pits
- parts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 4
- 239000003792 electrolyte Substances 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 229910052732 germanium Inorganic materials 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 238000005286 illumination Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
- C25F3/12—Etching of semiconducting materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US294383A US3267014A (en) | 1963-07-11 | 1963-07-11 | Process for rapidly etching a flatbottomed pit in a germanium wafer |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1054587A true GB1054587A (US07922777-20110412-C00004.png) |
Family
ID=23133177
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1054587D Active GB1054587A (US07922777-20110412-C00004.png) | 1963-07-11 |
Country Status (2)
Country | Link |
---|---|
US (1) | US3267014A (US07922777-20110412-C00004.png) |
GB (1) | GB1054587A (US07922777-20110412-C00004.png) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3403084A (en) * | 1965-07-26 | 1968-09-24 | Gen Electric | Electrolytic material removal wherein the current-voltage relationship is in the kellogg region |
US3403085A (en) * | 1965-12-20 | 1968-09-24 | Gen Electric | Electrolytic material removal wherein the charge in the electrolyte is partially dissipate |
US4125440A (en) * | 1977-07-25 | 1978-11-14 | International Business Machines Corporation | Method for non-destructive testing of semiconductor articles |
US5641391A (en) * | 1995-05-15 | 1997-06-24 | Hunter; Ian W. | Three dimensional microfabrication by localized electrodeposition and etching |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2844531A (en) * | 1954-05-24 | 1958-07-22 | Bell Telephone Labor Inc | Method of producing cavities in semiconductive surfaces |
US2850444A (en) * | 1954-11-01 | 1958-09-02 | Rca Corp | Pulse method of etching semiconductor junction devices |
US2854387A (en) * | 1955-11-21 | 1958-09-30 | Philco Corp | Method of jet plating |
US2998362A (en) * | 1958-10-16 | 1961-08-29 | Transitron Electronic Corp | Method of selectively electrolytically etching semiconductor silicon materials |
GB919158A (en) * | 1959-02-26 | 1963-02-20 | Mullard Ltd | Improvements in methods of etching bodies |
-
0
- GB GB1054587D patent/GB1054587A/en active Active
-
1963
- 1963-07-11 US US294383A patent/US3267014A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US3267014A (en) | 1966-08-16 |
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