GB1027159A - Improvements in or relating to processes for the production of ribbon-shaped dendrites of semiconductor material - Google Patents

Improvements in or relating to processes for the production of ribbon-shaped dendrites of semiconductor material

Info

Publication number
GB1027159A
GB1027159A GB44157/62A GB4415762A GB1027159A GB 1027159 A GB1027159 A GB 1027159A GB 44157/62 A GB44157/62 A GB 44157/62A GB 4415762 A GB4415762 A GB 4415762A GB 1027159 A GB1027159 A GB 1027159A
Authority
GB
United Kingdom
Prior art keywords
layers
epitaxial
temperature
ribbon
relating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB44157/62A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens Corp
Original Assignee
Siemens and Halske AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens Corp filed Critical Siemens and Halske AG
Publication of GB1027159A publication Critical patent/GB1027159A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/903—Dendrite or web or cage technique

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB44157/62A 1961-11-24 1962-11-22 Improvements in or relating to processes for the production of ribbon-shaped dendrites of semiconductor material Expired GB1027159A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES76815A DE1257119B (de) 1961-11-24 1961-11-24 Verfahren zum Herstellen epitaktischer Schichten auf {111}-Flaechen dendritischer Halbleiterkristalle

Publications (1)

Publication Number Publication Date
GB1027159A true GB1027159A (en) 1966-04-27

Family

ID=7506382

Family Applications (1)

Application Number Title Priority Date Filing Date
GB44157/62A Expired GB1027159A (en) 1961-11-24 1962-11-22 Improvements in or relating to processes for the production of ribbon-shaped dendrites of semiconductor material

Country Status (5)

Country Link
US (1) US3344002A (enExample)
CH (1) CH442248A (enExample)
DE (1) DE1257119B (enExample)
GB (1) GB1027159A (enExample)
NL (1) NL285435A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3473974A (en) * 1967-02-14 1969-10-21 Westinghouse Electric Corp Utilization of trace impurities in the vapor growth of crystals
US3900363A (en) * 1972-11-15 1975-08-19 Nippon Columbia Method of making crystal

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL99536C (enExample) * 1951-03-07 1900-01-01
NL241834A (enExample) * 1958-08-28 1900-01-01
US3025192A (en) * 1959-01-02 1962-03-13 Norton Co Silicon carbide crystals and processes and furnaces for making them
US3206406A (en) * 1960-05-09 1965-09-14 Merck & Co Inc Critical cooling rate in vapor deposition process to form bladelike semiconductor compound crystals
DE1254607B (de) * 1960-12-08 1967-11-23 Siemens Ag Verfahren zum Herstellen von einkristallinen Halbleiterkoerpoern aus der Gasphase
US3152022A (en) * 1962-05-25 1964-10-06 Bell Telephone Labor Inc Epitaxial deposition on the surface of a freshly grown dendrite

Also Published As

Publication number Publication date
DE1257119B (de) 1967-12-28
CH442248A (de) 1967-08-31
US3344002A (en) 1967-09-26
NL285435A (enExample) 1900-01-01

Similar Documents

Publication Publication Date Title
GB1414254A (en) Epitaxial growth of semiconductor material from the liquid phase
GB991560A (en) Production of single crystal compounds
GB1027159A (en) Improvements in or relating to processes for the production of ribbon-shaped dendrites of semiconductor material
ES278602A1 (es) Procedimiento para formar sobre un substrato semiconductivo una pelicula semiconductiva epitaxil
US3184348A (en) Method for controlling doping in vaporgrown semiconductor bodies
GB1255576A (en) Improvements in or relating to the production of epitaxially grown layers of semiconductor material
GB1482016A (en) Epitaxial deposition of semiconductor material
CH499880A (de) Verfahren zum Herstellen epitaktischer Schichten halbleitender Verbindungen
SU639358A1 (ru) Способ получени р-п структур
GB1002528A (en) Manufacture of semiconductive bodies
JPS54114089A (en) Hall element using gallium arsenide crystal
GB1376973A (en) Method of growing monocrystalline semiconductor material
GB995911A (en) A process for use in the production of a semi-conductor device
US3170882A (en) Process for making semiconductors of predetermined resistivities
GB1165037A (en) Method of Manufacturing Crystals.
JPS56114317A (en) Manufacture of semiconductor heterojunction photoelectric device
JPS56124228A (en) Method for low-tension epitaxial growth
JPS5520258A (en) Liquid phase epitaxial growing method and device
JPS57149721A (en) Method of vapor epitaxial growth
AT242199B (de) Verfahren zum Herstellen einer Halbleiteranordnung
FR2189876A1 (en) Radiation resistant silicon wafers - and solar cells made therefrom for use in space
MANASEVIT et al. Study of the preparation of III-V alloy semiconductors with controlled band gaps(Epitaxial growth of gallium-indium-arsenide semiconducting film on n-type single crystal substrate)[Final Report, 1 Apr. 1970- 31 Mar. 1971]
GB993701A (en) Improvements in or relating to processes for the production of ribbon-shaped dendrites of semiconductor material
DYACHKOVA et al. Effect of substrate temperature and silicon content in arsenic (3) chloride on the properties of epitaxial layers of gallium arsenide grown from the gas phase(Influence of substrate temperature on properties of epitaxial layers of GaAs during growth)
JPS5574195A (en) Manufacturing semiconductor laser