FR3130296B1 - Procede de fabrication d’une structure semi-conductrice comprenant un substrat de carbure de silicium polycristallin et une couche active de carbure de silicium monocristallin - Google Patents

Procede de fabrication d’une structure semi-conductrice comprenant un substrat de carbure de silicium polycristallin et une couche active de carbure de silicium monocristallin Download PDF

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Publication number
FR3130296B1
FR3130296B1 FR2113508A FR2113508A FR3130296B1 FR 3130296 B1 FR3130296 B1 FR 3130296B1 FR 2113508 A FR2113508 A FR 2113508A FR 2113508 A FR2113508 A FR 2113508A FR 3130296 B1 FR3130296 B1 FR 3130296B1
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France
Prior art keywords
silicon carbide
active layer
manufacturing
semiconductor structure
polycrystalline silicon
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FR2113508A
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English (en)
French (fr)
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FR3130296A1 (fr
Inventor
Hugo Biard
Eric Guiot
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Soitec SA
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Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR2113508A priority Critical patent/FR3130296B1/fr
Priority to TW111144679A priority patent/TW202332044A/zh
Priority to US18/718,313 priority patent/US20250063784A1/en
Priority to CN202280080216.6A priority patent/CN118355474A/zh
Priority to JP2024531244A priority patent/JP2024543550A/ja
Priority to EP22840798.7A priority patent/EP4449477B1/fr
Priority to PCT/FR2022/052331 priority patent/WO2023111446A1/fr
Publication of FR3130296A1 publication Critical patent/FR3130296A1/fr
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Publication of FR3130296B1 publication Critical patent/FR3130296B1/fr
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H10P10/128—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates by direct semiconductor to semiconductor bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2903—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2904—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3208—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3408—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
FR2113508A 2021-12-14 2021-12-14 Procede de fabrication d’une structure semi-conductrice comprenant un substrat de carbure de silicium polycristallin et une couche active de carbure de silicium monocristallin Active FR3130296B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR2113508A FR3130296B1 (fr) 2021-12-14 2021-12-14 Procede de fabrication d’une structure semi-conductrice comprenant un substrat de carbure de silicium polycristallin et une couche active de carbure de silicium monocristallin
TW111144679A TW202332044A (zh) 2021-12-14 2022-11-22 用於製作包含多晶碳化矽底材及單晶碳化矽主動層之半導體結構之方法
CN202280080216.6A CN118355474A (zh) 2021-12-14 2022-12-13 用于制造包括多晶碳化硅衬底和单晶碳化硅有源层的半导体结构的方法
JP2024531244A JP2024543550A (ja) 2021-12-14 2022-12-13 多結晶シリコンカーバイド基板と単結晶シリコンカーバイドの活性層とを備える半導体構造の製造のためのプロセス
US18/718,313 US20250063784A1 (en) 2021-12-14 2022-12-13 Process for the manufacture of a semiconductor structure comprising a polycrystalline silicon carbide substrate and an active layer of single-crystal silicon carbide
EP22840798.7A EP4449477B1 (fr) 2021-12-14 2022-12-13 Procede de fabrication d'une structure semi-conductrice comprenant un substrat de carbure de silicium polycristallin et une couche active de carbure de silicium monocristallin
PCT/FR2022/052331 WO2023111446A1 (fr) 2021-12-14 2022-12-13 Procede de fabrication d'une structure semi-conductrice comprenant un substrat de carbure de silicium polycristallin et une couche active de carbure de silicium monocristallin

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2113508 2021-12-14
FR2113508A FR3130296B1 (fr) 2021-12-14 2021-12-14 Procede de fabrication d’une structure semi-conductrice comprenant un substrat de carbure de silicium polycristallin et une couche active de carbure de silicium monocristallin

Publications (2)

Publication Number Publication Date
FR3130296A1 FR3130296A1 (fr) 2023-06-16
FR3130296B1 true FR3130296B1 (fr) 2023-11-03

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FR2113508A Active FR3130296B1 (fr) 2021-12-14 2021-12-14 Procede de fabrication d’une structure semi-conductrice comprenant un substrat de carbure de silicium polycristallin et une couche active de carbure de silicium monocristallin

Country Status (7)

Country Link
US (1) US20250063784A1 (https=)
EP (1) EP4449477B1 (https=)
JP (1) JP2024543550A (https=)
CN (1) CN118355474A (https=)
FR (1) FR3130296B1 (https=)
TW (1) TW202332044A (https=)
WO (1) WO2023111446A1 (https=)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6098048B2 (ja) * 2012-06-29 2017-03-22 株式会社豊田自動織機 半導体装置の製造方法
JP6544166B2 (ja) * 2015-09-14 2019-07-17 信越化学工業株式会社 ＳｉＣ複合基板の製造方法
JP6619874B2 (ja) * 2016-04-05 2019-12-11 株式会社サイコックス 多結晶ＳｉＣ基板およびその製造方法
JP6387375B2 (ja) * 2016-07-19 2018-09-05 株式会社サイコックス 半導体基板
JP7077288B2 (ja) * 2019-09-27 2022-05-30 東海カーボン株式会社 多結晶ＳｉＣ成形体
FR3108775B1 (fr) * 2020-03-27 2022-02-18 Soitec Silicon On Insulator Procede de fabrication d’une structure composite comprenant une couche mince en sic monocristallin sur un substrat support en sic

Also Published As

Publication number Publication date
TW202332044A (zh) 2023-08-01
CN118355474A (zh) 2024-07-16
EP4449477A1 (fr) 2024-10-23
EP4449477C0 (fr) 2025-12-31
US20250063784A1 (en) 2025-02-20
WO2023111446A1 (fr) 2023-06-22
FR3130296A1 (fr) 2023-06-16
EP4449477B1 (fr) 2025-12-31
JP2024543550A (ja) 2024-11-21

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