FR3036530B1 - Procede de realisation de cellules memoires du type a programmation unique comportant des condensateurs mos et circuit integre correspondant - Google Patents

Procede de realisation de cellules memoires du type a programmation unique comportant des condensateurs mos et circuit integre correspondant Download PDF

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Publication number
FR3036530B1
FR3036530B1 FR1554457A FR1554457A FR3036530B1 FR 3036530 B1 FR3036530 B1 FR 3036530B1 FR 1554457 A FR1554457 A FR 1554457A FR 1554457 A FR1554457 A FR 1554457A FR 3036530 B1 FR3036530 B1 FR 3036530B1
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Prior art keywords
integrated circuit
memory cells
mos capacitors
programming memory
corresponding integrated
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Expired - Fee Related
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FR1554457A
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FR3036530A1 (fr
Inventor
Stephane Denorme
Philippe Candelier
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STMicroelectronics SA
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STMicroelectronics SA
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Priority to FR1554457A priority Critical patent/FR3036530B1/fr
Priority to CN201520951130.3U priority patent/CN205140992U/zh
Priority to US14/952,662 priority patent/US9589968B2/en
Priority to CN201510831353.0A priority patent/CN106169474B/zh
Publication of FR3036530A1 publication Critical patent/FR3036530A1/fr
Priority to US15/413,497 priority patent/US9881928B2/en
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Publication of FR3036530B1 publication Critical patent/FR3036530B1/fr
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    • H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate
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FR1554457A 2015-05-19 2015-05-19 Procede de realisation de cellules memoires du type a programmation unique comportant des condensateurs mos et circuit integre correspondant Expired - Fee Related FR3036530B1 (fr)

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FR1554457A FR3036530B1 (fr) 2015-05-19 2015-05-19 Procede de realisation de cellules memoires du type a programmation unique comportant des condensateurs mos et circuit integre correspondant
CN201520951130.3U CN205140992U (zh) 2015-05-19 2015-11-25 集成电路
US14/952,662 US9589968B2 (en) 2015-05-19 2015-11-25 Method for producing one-time-programmable memory cells and corresponding integrated circuit
CN201510831353.0A CN106169474B (zh) 2015-05-19 2015-11-25 用于制造包括mos电容器的一次性可编程类型的存储器单元的方法以及对应的集成电路
US15/413,497 US9881928B2 (en) 2015-05-19 2017-01-24 Method for producing one-time-programmable memory cells and corresponding integrated circuit

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FR3036530B1 (fr) * 2015-05-19 2018-03-02 Stmicroelectronics Sa Procede de realisation de cellules memoires du type a programmation unique comportant des condensateurs mos et circuit integre correspondant
CN110383490A (zh) * 2017-03-31 2019-10-25 英特尔公司 用于晶体管的栅极
US10818592B1 (en) * 2019-04-29 2020-10-27 Nanya Technology Corporation Semiconductor memory device including decoupling capacitor array arranged overlying one-time programmable device

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US20140203361A1 (en) * 2013-01-22 2014-07-24 International Business Machines Corporation Extremely thin semiconductor-on-insulator field-effect transistor with an epitaxial source and drain having a low external resistance
US9761595B2 (en) * 2013-02-21 2017-09-12 Infineon Technologies Ag One-time programming device and a semiconductor device
US9281074B2 (en) * 2013-05-16 2016-03-08 Ememory Technology Inc. One time programmable memory cell capable of reducing leakage current and preventing slow bit response
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US20170133390A1 (en) 2017-05-11
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US20160343720A1 (en) 2016-11-24
US9589968B2 (en) 2017-03-07
CN106169474A (zh) 2016-11-30
CN106169474B (zh) 2019-10-11
US9881928B2 (en) 2018-01-30

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