SG11201705757XA - Memory cell selector and method of operating memory cell - Google Patents

Memory cell selector and method of operating memory cell

Info

Publication number
SG11201705757XA
SG11201705757XA SG11201705757XA SG11201705757XA SG11201705757XA SG 11201705757X A SG11201705757X A SG 11201705757XA SG 11201705757X A SG11201705757X A SG 11201705757XA SG 11201705757X A SG11201705757X A SG 11201705757XA SG 11201705757X A SG11201705757X A SG 11201705757XA
Authority
SG
Singapore
Prior art keywords
memory cell
selector
operating
operating memory
cell selector
Prior art date
Application number
SG11201705757XA
Inventor
Hongxin Yang
Minghua Li
Wei He
Yu Jiang
Fei Li
Original Assignee
Agency Science Tech & Res
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency Science Tech & Res filed Critical Agency Science Tech & Res
Publication of SG11201705757XA publication Critical patent/SG11201705757XA/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/003—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0038—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8822—Sulfides, e.g. CuS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G11C2013/0052—Read process characterized by the shape, e.g. form, length, amplitude of the read pulse
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0092—Write characterized by the shape, e.g. form, length, amplitude of the write pulse
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/15—Current-voltage curve
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/76—Array using an access device for each cell which being not a transistor and not a diode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H10B63/22—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes of the metal-insulator-metal type
SG11201705757XA 2015-01-26 2016-01-26 Memory cell selector and method of operating memory cell SG11201705757XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SG10201500602R 2015-01-26
PCT/SG2016/050035 WO2016122406A1 (en) 2015-01-26 2016-01-26 Memory cell selector and method of operating memory cell

Publications (1)

Publication Number Publication Date
SG11201705757XA true SG11201705757XA (en) 2017-08-30

Family

ID=56543859

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201705757XA SG11201705757XA (en) 2015-01-26 2016-01-26 Memory cell selector and method of operating memory cell

Country Status (3)

Country Link
US (1) US10388371B2 (en)
SG (1) SG11201705757XA (en)
WO (1) WO2016122406A1 (en)

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WO2019045682A1 (en) * 2017-08-29 2019-03-07 Intel Corporation Selector devices
CN107732010B (en) 2017-09-29 2020-07-10 华中科技大学 Gate tube device and preparation method thereof
CN108110022A (en) * 2017-12-13 2018-06-01 德淮半导体有限公司 Switch element and the method for being formed and using switch element
US10748594B2 (en) 2018-02-13 2020-08-18 Micron Technology, Inc. Enabling fast pulse operation
US11631717B2 (en) 2018-09-28 2023-04-18 Intel Corporation 3D memory array with memory cells having a 3D selector and a storage component
CN111384238B (en) * 2018-12-28 2022-01-28 中国科学院上海微系统与信息技术研究所 Gate tube material, gate tube unit and memory device structure
CN109949836B (en) 2019-02-19 2020-09-08 华中科技大学 Operation method for improving performance of gate tube device
US11289650B2 (en) 2019-03-04 2022-03-29 International Business Machines Corporation Stacked access device and resistive memory
TWI707455B (en) * 2019-09-17 2020-10-11 華邦電子股份有限公司 Non-volatile memory and method of fabricating the same
CN112635660B (en) * 2019-10-08 2024-02-27 华邦电子股份有限公司 Nonvolatile memory and method of manufacturing the same
CN114171083A (en) 2020-11-03 2022-03-11 台湾积体电路制造股份有限公司 Memory device
CN113555499A (en) * 2021-06-11 2021-10-26 河北大学 Solid electrolyte threshold switch device, preparation method thereof and 1S1R integrated structure
US20230253038A1 (en) * 2022-02-07 2023-08-10 Taiwan Semiconductor Manufacturing Co., Ltd Memory selector threshold voltage recovery

Family Cites Families (14)

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Publication number Priority date Publication date Assignee Title
US7151273B2 (en) * 2002-02-20 2006-12-19 Micron Technology, Inc. Silver-selenide/chalcogenide glass stack for resistance variable memory
US6867114B2 (en) 2002-08-29 2005-03-15 Micron Technology Inc. Methods to form a memory cell with metal-rich metal chalcogenide
US6867996B2 (en) * 2002-08-29 2005-03-15 Micron Technology, Inc. Single-polarity programmable resistance-variable memory element
US7354793B2 (en) * 2004-08-12 2008-04-08 Micron Technology, Inc. Method of forming a PCRAM device incorporating a resistance-variable chalocogenide element
US20090023191A1 (en) * 2005-02-11 2009-01-22 Bastien Chevreux Gene RCS 23
US7570524B2 (en) 2005-03-30 2009-08-04 Ovonyx, Inc. Circuitry for reading phase change memory cells having a clamping circuit
US7479654B2 (en) * 2005-05-09 2009-01-20 Nantero, Inc. Memory arrays using nanotube articles with reprogrammable resistance
US7274034B2 (en) * 2005-08-01 2007-09-25 Micron Technology, Inc. Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication
US7635855B2 (en) 2005-11-15 2009-12-22 Macronix International Co., Ltd. I-shaped phase change memory cell
US7535756B2 (en) 2007-01-31 2009-05-19 Macronix International Co., Ltd. Method to tighten set distribution for PCRAM
US7961507B2 (en) * 2008-03-11 2011-06-14 Micron Technology, Inc. Non-volatile memory with resistive access component
JP2012039041A (en) 2010-08-11 2012-02-23 Sony Corp Memory element
KR101457812B1 (en) 2013-08-19 2014-11-05 포항공과대학교 산학협력단 2-Terminal Switching Device Having Bipolar Switching Property, Fabrication Methods for the Same, and Resistance Memory Cross-Point Array Having the Same
US9659998B1 (en) * 2016-06-07 2017-05-23 Macronix International Co., Ltd. Memory having an interlayer insulating structure with different thermal resistance

Also Published As

Publication number Publication date
US10388371B2 (en) 2019-08-20
WO2016122406A1 (en) 2016-08-04
US20180012652A1 (en) 2018-01-11

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