FR3008231B1 - Dispositifs metal-oxyde-semiconducteur (mos) a plus grand pourtour de canaux et procedes de fabrication - Google Patents

Dispositifs metal-oxyde-semiconducteur (mos) a plus grand pourtour de canaux et procedes de fabrication

Info

Publication number
FR3008231B1
FR3008231B1 FR1456024A FR1456024A FR3008231B1 FR 3008231 B1 FR3008231 B1 FR 3008231B1 FR 1456024 A FR1456024 A FR 1456024A FR 1456024 A FR1456024 A FR 1456024A FR 3008231 B1 FR3008231 B1 FR 3008231B1
Authority
FR
France
Prior art keywords
mos
oxide
making
methods
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1456024A
Other languages
English (en)
French (fr)
Other versions
FR3008231A1 (fr
Inventor
Alexander Viktorovich Bolotnikov
Peter Almern Losee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of FR3008231A1 publication Critical patent/FR3008231A1/fr
Application granted granted Critical
Publication of FR3008231B1 publication Critical patent/FR3008231B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/815—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/257—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
FR1456024A 2013-07-02 2014-06-27 Dispositifs metal-oxyde-semiconducteur (mos) a plus grand pourtour de canaux et procedes de fabrication Active FR3008231B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/934,053 US9024328B2 (en) 2013-07-02 2013-07-02 Metal-oxide-semiconductor (MOS) devices with increased channel periphery and methods of manufacture

Publications (2)

Publication Number Publication Date
FR3008231A1 FR3008231A1 (fr) 2015-01-09
FR3008231B1 true FR3008231B1 (fr) 2017-12-22

Family

ID=51410415

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1456024A Active FR3008231B1 (fr) 2013-07-02 2014-06-27 Dispositifs metal-oxyde-semiconducteur (mos) a plus grand pourtour de canaux et procedes de fabrication

Country Status (7)

Country Link
US (1) US9024328B2 (enExample)
JP (1) JP6378552B2 (enExample)
CN (1) CN104282574B (enExample)
BR (1) BR102014016200A2 (enExample)
CA (1) CA2855325C (enExample)
FR (1) FR3008231B1 (enExample)
GB (1) GB2518040B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015177914A1 (ja) * 2014-05-23 2015-11-26 株式会社日立製作所 半導体装置、半導体装置の製造方法、電力変換装置、３相モータシステム、自動車、および鉄道車両
US9716144B2 (en) 2014-12-19 2017-07-25 General Electric Company Semiconductor devices having channel regions with non-uniform edge
CN111627987A (zh) * 2020-05-29 2020-09-04 东莞南方半导体科技有限公司 一种Fin沟道结构SiC场效应晶体管器件
CN113292036B (zh) * 2021-05-24 2024-09-20 上海芯物科技有限公司 一种旋转结构及其制备方法
US20240014262A1 (en) * 2022-07-05 2024-01-11 Walter A. Tormasi Semiconductor Featuring Ridged Architecture
CN114975127B (zh) * 2022-08-01 2022-10-21 南京融芯微电子有限公司 一种碳化硅平面式功率mosfet器件的制造方法
JP2024031011A (ja) * 2022-08-25 2024-03-07 住友電気工業株式会社 炭化珪素半導体装置
CN115425089A (zh) * 2022-11-07 2022-12-02 广东芯聚能半导体有限公司 半导体结构及其制备方法

Family Cites Families (28)

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US4393391A (en) 1980-06-16 1983-07-12 Supertex, Inc. Power MOS transistor with a plurality of longitudinal grooves to increase channel conducting area
US5174857A (en) 1990-10-29 1992-12-29 Gold Star Co., Ltd. Slope etching process
JPH0575121A (ja) * 1991-09-18 1993-03-26 Fujitsu Ltd 半導体装置
EP0726603B1 (en) 1995-02-10 1999-04-21 SILICONIX Incorporated Trenched field effect transistor with PN depletion barrier
JP3319215B2 (ja) 1995-03-31 2002-08-26 株式会社豊田中央研究所 絶縁ゲート型半導体装置およびその製造方法
US6049108A (en) 1995-06-02 2000-04-11 Siliconix Incorporated Trench-gated MOSFET with bidirectional voltage clamping
US5869371A (en) 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices
JP3471509B2 (ja) * 1996-01-23 2003-12-02 株式会社デンソー 炭化珪素半導体装置
US5893757A (en) 1997-01-13 1999-04-13 Applied Komatsu Technology, Inc. Tapered profile etching method
US6144067A (en) 1998-11-23 2000-11-07 International Rectifier Corp. Strip gate poly structure for increased channel width and reduced gate resistance
US6218701B1 (en) 1999-04-30 2001-04-17 Intersil Corporation Power MOS device with increased channel width and process for forming same
JP2001351895A (ja) 2000-06-09 2001-12-21 Denso Corp 半導体装置の製造方法
JP4029595B2 (ja) 2001-10-15 2008-01-09 株式会社デンソー ＳｉＣ半導体装置の製造方法
JP4110875B2 (ja) * 2002-08-09 2008-07-02 株式会社デンソー 炭化珪素半導体装置
KR100487657B1 (ko) 2003-08-13 2005-05-03 삼성전자주식회사 리세스된 게이트를 갖는 모스 트렌지스터 및 그의 제조방법
US7345309B2 (en) 2004-08-31 2008-03-18 Lockheed Martin Corporation SiC metal semiconductor field-effect transistor
US20060071270A1 (en) 2004-09-29 2006-04-06 Shibib Muhammed A Metal-oxide-semiconductor device having trenched diffusion region and method of forming same
US20060255412A1 (en) 2005-05-13 2006-11-16 Nirmal Ramaswamy Enhanced access devices using selective epitaxial silicon over the channel region during the formation of a semiconductor device and systems including same
JP2008016747A (ja) 2006-07-10 2008-01-24 Fuji Electric Holdings Co Ltd トレンチｍｏｓ型炭化珪素半導体装置およびその製造方法
US7989882B2 (en) 2007-12-07 2011-08-02 Cree, Inc. Transistor with A-face conductive channel and trench protecting well region
EP2091083A3 (en) 2008-02-13 2009-10-14 Denso Corporation Silicon carbide semiconductor device including a deep layer
JP5463725B2 (ja) * 2009-04-28 2014-04-09 富士電機株式会社 炭化珪素半導体装置およびその製造方法
JP2012038771A (ja) * 2010-08-03 2012-02-23 Sumitomo Electric Ind Ltd 半導体装置およびその製造方法
JP5728992B2 (ja) 2011-02-11 2015-06-03 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP2012169384A (ja) 2011-02-11 2012-09-06 Denso Corp 炭化珪素半導体装置およびその製造方法
JP2012253293A (ja) 2011-06-07 2012-12-20 Sumitomo Electric Ind Ltd 半導体装置
JP6017127B2 (ja) * 2011-09-30 2016-10-26 株式会社東芝 炭化珪素半導体装置
JP6111673B2 (ja) * 2012-07-25 2017-04-12 住友電気工業株式会社 炭化珪素半導体装置

Also Published As

Publication number Publication date
CA2855325C (en) 2021-02-16
FR3008231A1 (fr) 2015-01-09
GB2518040B (en) 2017-06-28
JP2015015464A (ja) 2015-01-22
GB2518040A (en) 2015-03-11
GB201411673D0 (en) 2014-08-13
BR102014016200A2 (pt) 2015-09-22
US9024328B2 (en) 2015-05-05
CN104282574B (zh) 2020-01-17
CA2855325A1 (en) 2015-01-02
JP6378552B2 (ja) 2018-08-22
US20150008449A1 (en) 2015-01-08
CN104282574A (zh) 2015-01-14

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