GB2518040B - Metal-oxide-semiconductor (MOS) devices with increased channel periphery and methods of manufacture - Google Patents

Metal-oxide-semiconductor (MOS) devices with increased channel periphery and methods of manufacture

Info

Publication number
GB2518040B
GB2518040B GB1411673.5A GB201411673A GB2518040B GB 2518040 B GB2518040 B GB 2518040B GB 201411673 A GB201411673 A GB 201411673A GB 2518040 B GB2518040 B GB 2518040B
Authority
GB
United Kingdom
Prior art keywords
mos
semiconductor
oxide
manufacture
methods
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
GB1411673.5A
Other languages
English (en)
Other versions
GB2518040A (en
GB201411673D0 (en
Inventor
Viktorovich Bolotnikov Alexander
Almern Losee Peter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of GB201411673D0 publication Critical patent/GB201411673D0/en
Publication of GB2518040A publication Critical patent/GB2518040A/en
Application granted granted Critical
Publication of GB2518040B publication Critical patent/GB2518040B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/815—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/257—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
GB1411673.5A 2013-07-02 2014-07-01 Metal-oxide-semiconductor (MOS) devices with increased channel periphery and methods of manufacture Active GB2518040B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/934,053 US9024328B2 (en) 2013-07-02 2013-07-02 Metal-oxide-semiconductor (MOS) devices with increased channel periphery and methods of manufacture

Publications (3)

Publication Number Publication Date
GB201411673D0 GB201411673D0 (en) 2014-08-13
GB2518040A GB2518040A (en) 2015-03-11
GB2518040B true GB2518040B (en) 2017-06-28

Family

ID=51410415

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1411673.5A Active GB2518040B (en) 2013-07-02 2014-07-01 Metal-oxide-semiconductor (MOS) devices with increased channel periphery and methods of manufacture

Country Status (7)

Country Link
US (1) US9024328B2 (enExample)
JP (1) JP6378552B2 (enExample)
CN (1) CN104282574B (enExample)
BR (1) BR102014016200A2 (enExample)
CA (1) CA2855325C (enExample)
FR (1) FR3008231B1 (enExample)
GB (1) GB2518040B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015177914A1 (ja) * 2014-05-23 2015-11-26 株式会社日立製作所 半導体装置、半導体装置の製造方法、電力変換装置、３相モータシステム、自動車、および鉄道車両
US9716144B2 (en) 2014-12-19 2017-07-25 General Electric Company Semiconductor devices having channel regions with non-uniform edge
CN111627987A (zh) * 2020-05-29 2020-09-04 东莞南方半导体科技有限公司 一种Fin沟道结构SiC场效应晶体管器件
CN113292036B (zh) * 2021-05-24 2024-09-20 上海芯物科技有限公司 一种旋转结构及其制备方法
US20240014262A1 (en) * 2022-07-05 2024-01-11 Walter A. Tormasi Semiconductor Featuring Ridged Architecture
CN114975127B (zh) * 2022-08-01 2022-10-21 南京融芯微电子有限公司 一种碳化硅平面式功率mosfet器件的制造方法
JP2024031011A (ja) * 2022-08-25 2024-03-07 住友電気工業株式会社 炭化珪素半導体装置
CN115425089A (zh) * 2022-11-07 2022-12-02 广东芯聚能半导体有限公司 半导体结构及其制备方法

Citations (5)

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Publication number Priority date Publication date Assignee Title
US20060255412A1 (en) * 2005-05-13 2006-11-16 Nirmal Ramaswamy Enhanced access devices using selective epitaxial silicon over the channel region during the formation of a semiconductor device and systems including same
EP2091083A2 (en) * 2008-02-13 2009-08-19 Denso Corporation Silicon carbide semiconductor device including a deep layer
WO2012108167A1 (en) * 2011-02-11 2012-08-16 Denso Corporation Silicon carbide semiconductor device and method for manufacturing the same
WO2012108166A1 (en) * 2011-02-11 2012-08-16 Denso Corporation Silicon carbide semiconductor device and method for manufacturing the same
US20120313112A1 (en) * 2011-06-07 2012-12-13 Sumitomo Electric Industries, Ltd. Semiconductor device

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US4393391A (en) 1980-06-16 1983-07-12 Supertex, Inc. Power MOS transistor with a plurality of longitudinal grooves to increase channel conducting area
US5174857A (en) 1990-10-29 1992-12-29 Gold Star Co., Ltd. Slope etching process
JPH0575121A (ja) * 1991-09-18 1993-03-26 Fujitsu Ltd 半導体装置
EP0726603B1 (en) 1995-02-10 1999-04-21 SILICONIX Incorporated Trenched field effect transistor with PN depletion barrier
JP3319215B2 (ja) 1995-03-31 2002-08-26 株式会社豊田中央研究所 絶縁ゲート型半導体装置およびその製造方法
US6049108A (en) 1995-06-02 2000-04-11 Siliconix Incorporated Trench-gated MOSFET with bidirectional voltage clamping
US5869371A (en) 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices
JP3471509B2 (ja) * 1996-01-23 2003-12-02 株式会社デンソー 炭化珪素半導体装置
US5893757A (en) 1997-01-13 1999-04-13 Applied Komatsu Technology, Inc. Tapered profile etching method
US6144067A (en) 1998-11-23 2000-11-07 International Rectifier Corp. Strip gate poly structure for increased channel width and reduced gate resistance
US6218701B1 (en) 1999-04-30 2001-04-17 Intersil Corporation Power MOS device with increased channel width and process for forming same
JP2001351895A (ja) 2000-06-09 2001-12-21 Denso Corp 半導体装置の製造方法
JP4029595B2 (ja) 2001-10-15 2008-01-09 株式会社デンソー ＳｉＣ半導体装置の製造方法
JP4110875B2 (ja) * 2002-08-09 2008-07-02 株式会社デンソー 炭化珪素半導体装置
KR100487657B1 (ko) 2003-08-13 2005-05-03 삼성전자주식회사 리세스된 게이트를 갖는 모스 트렌지스터 및 그의 제조방법
US7345309B2 (en) 2004-08-31 2008-03-18 Lockheed Martin Corporation SiC metal semiconductor field-effect transistor
US20060071270A1 (en) 2004-09-29 2006-04-06 Shibib Muhammed A Metal-oxide-semiconductor device having trenched diffusion region and method of forming same
JP2008016747A (ja) 2006-07-10 2008-01-24 Fuji Electric Holdings Co Ltd トレンチｍｏｓ型炭化珪素半導体装置およびその製造方法
US7989882B2 (en) 2007-12-07 2011-08-02 Cree, Inc. Transistor with A-face conductive channel and trench protecting well region
JP5463725B2 (ja) * 2009-04-28 2014-04-09 富士電機株式会社 炭化珪素半導体装置およびその製造方法
JP2012038771A (ja) * 2010-08-03 2012-02-23 Sumitomo Electric Ind Ltd 半導体装置およびその製造方法
JP6017127B2 (ja) * 2011-09-30 2016-10-26 株式会社東芝 炭化珪素半導体装置
JP6111673B2 (ja) * 2012-07-25 2017-04-12 住友電気工業株式会社 炭化珪素半導体装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060255412A1 (en) * 2005-05-13 2006-11-16 Nirmal Ramaswamy Enhanced access devices using selective epitaxial silicon over the channel region during the formation of a semiconductor device and systems including same
EP2091083A2 (en) * 2008-02-13 2009-08-19 Denso Corporation Silicon carbide semiconductor device including a deep layer
WO2012108167A1 (en) * 2011-02-11 2012-08-16 Denso Corporation Silicon carbide semiconductor device and method for manufacturing the same
WO2012108166A1 (en) * 2011-02-11 2012-08-16 Denso Corporation Silicon carbide semiconductor device and method for manufacturing the same
US20120313112A1 (en) * 2011-06-07 2012-12-13 Sumitomo Electric Industries, Ltd. Semiconductor device

Also Published As

Publication number Publication date
FR3008231B1 (fr) 2017-12-22
CA2855325C (en) 2021-02-16
FR3008231A1 (fr) 2015-01-09
JP2015015464A (ja) 2015-01-22
GB2518040A (en) 2015-03-11
GB201411673D0 (en) 2014-08-13
BR102014016200A2 (pt) 2015-09-22
US9024328B2 (en) 2015-05-05
CN104282574B (zh) 2020-01-17
CA2855325A1 (en) 2015-01-02
JP6378552B2 (ja) 2018-08-22
US20150008449A1 (en) 2015-01-08
CN104282574A (zh) 2015-01-14

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