CA2855325C - Metal-oxide-semiconductor (mos) devices with increased channel periphery and methods of manufacture - Google Patents
Metal-oxide-semiconductor (mos) devices with increased channel periphery and methods of manufacture Download PDFInfo
- Publication number
- CA2855325C CA2855325C CA2855325A CA2855325A CA2855325C CA 2855325 C CA2855325 C CA 2855325C CA 2855325 A CA2855325 A CA 2855325A CA 2855325 A CA2855325 A CA 2855325A CA 2855325 C CA2855325 C CA 2855325C
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- drift layer
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 238000000034 method Methods 0.000 title claims description 14
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 92
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 90
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 239000002019 doping agent Substances 0.000 claims description 21
- 238000013461 design Methods 0.000 claims description 16
- 230000001413 cellular effect Effects 0.000 claims description 10
- 230000000903 blocking effect Effects 0.000 description 17
- 238000013459 approach Methods 0.000 description 14
- 239000013078 crystal Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 7
- 230000008901 benefit Effects 0.000 description 5
- 230000005669 field effect Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 210000003850 cellular structure Anatomy 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/117—Shapes of semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/01—Manufacture or treatment
- H10D12/031—Manufacture or treatment of IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/63—Vertical IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
- H10D62/126—Top-view geometrical layouts of the regions or the junctions
- H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
- H10D62/405—Orientations of crystalline planes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
- H10D62/815—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/251—Source or drain electrodes for field-effect devices
- H10D64/257—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/934,053 US9024328B2 (en) | 2013-07-02 | 2013-07-02 | Metal-oxide-semiconductor (MOS) devices with increased channel periphery and methods of manufacture |
| US13/934,053 | 2013-07-02 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA2855325A1 CA2855325A1 (en) | 2015-01-02 |
| CA2855325C true CA2855325C (en) | 2021-02-16 |
Family
ID=51410415
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA2855325A Active CA2855325C (en) | 2013-07-02 | 2014-06-26 | Metal-oxide-semiconductor (mos) devices with increased channel periphery and methods of manufacture |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9024328B2 (enExample) |
| JP (1) | JP6378552B2 (enExample) |
| CN (1) | CN104282574B (enExample) |
| BR (1) | BR102014016200A2 (enExample) |
| CA (1) | CA2855325C (enExample) |
| FR (1) | FR3008231B1 (enExample) |
| GB (1) | GB2518040B (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015177914A1 (ja) * | 2014-05-23 | 2015-11-26 | 株式会社日立製作所 | 半導体装置、半導体装置の製造方法、電力変換装置、３相モータシステム、自動車、および鉄道車両 |
| US9716144B2 (en) | 2014-12-19 | 2017-07-25 | General Electric Company | Semiconductor devices having channel regions with non-uniform edge |
| CN111627987A (zh) * | 2020-05-29 | 2020-09-04 | 东莞南方半导体科技有限公司 | 一种Fin沟道结构SiC场效应晶体管器件 |
| CN113292036B (zh) * | 2021-05-24 | 2024-09-20 | 上海芯物科技有限公司 | 一种旋转结构及其制备方法 |
| US20240014262A1 (en) * | 2022-07-05 | 2024-01-11 | Walter A. Tormasi | Semiconductor Featuring Ridged Architecture |
| CN114975127B (zh) * | 2022-08-01 | 2022-10-21 | 南京融芯微电子有限公司 | 一种碳化硅平面式功率mosfet器件的制造方法 |
| JP2024031011A (ja) * | 2022-08-25 | 2024-03-07 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
| CN115425089A (zh) * | 2022-11-07 | 2022-12-02 | 广东芯聚能半导体有限公司 | 半导体结构及其制备方法 |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4393391A (en) | 1980-06-16 | 1983-07-12 | Supertex, Inc. | Power MOS transistor with a plurality of longitudinal grooves to increase channel conducting area |
| US5174857A (en) | 1990-10-29 | 1992-12-29 | Gold Star Co., Ltd. | Slope etching process |
| JPH0575121A (ja) * | 1991-09-18 | 1993-03-26 | Fujitsu Ltd | 半導体装置 |
| EP0726603B1 (en) | 1995-02-10 | 1999-04-21 | SILICONIX Incorporated | Trenched field effect transistor with PN depletion barrier |
| JP3319215B2 (ja) | 1995-03-31 | 2002-08-26 | 株式会社豊田中央研究所 | 絶縁ゲート型半導体装置およびその製造方法 |
| US6049108A (en) | 1995-06-02 | 2000-04-11 | Siliconix Incorporated | Trench-gated MOSFET with bidirectional voltage clamping |
| US5869371A (en) | 1995-06-07 | 1999-02-09 | Stmicroelectronics, Inc. | Structure and process for reducing the on-resistance of mos-gated power devices |
| JP3471509B2 (ja) * | 1996-01-23 | 2003-12-02 | 株式会社デンソー | 炭化珪素半導体装置 |
| US5893757A (en) | 1997-01-13 | 1999-04-13 | Applied Komatsu Technology, Inc. | Tapered profile etching method |
| US6144067A (en) | 1998-11-23 | 2000-11-07 | International Rectifier Corp. | Strip gate poly structure for increased channel width and reduced gate resistance |
| US6218701B1 (en) | 1999-04-30 | 2001-04-17 | Intersil Corporation | Power MOS device with increased channel width and process for forming same |
| JP2001351895A (ja) | 2000-06-09 | 2001-12-21 | Denso Corp | 半導体装置の製造方法 |
| JP4029595B2 (ja) | 2001-10-15 | 2008-01-09 | 株式会社デンソー | ＳｉＣ半導体装置の製造方法 |
| JP4110875B2 (ja) * | 2002-08-09 | 2008-07-02 | 株式会社デンソー | 炭化珪素半導体装置 |
| KR100487657B1 (ko) | 2003-08-13 | 2005-05-03 | 삼성전자주식회사 | 리세스된 게이트를 갖는 모스 트렌지스터 및 그의 제조방법 |
| US7345309B2 (en) | 2004-08-31 | 2008-03-18 | Lockheed Martin Corporation | SiC metal semiconductor field-effect transistor |
| US20060071270A1 (en) | 2004-09-29 | 2006-04-06 | Shibib Muhammed A | Metal-oxide-semiconductor device having trenched diffusion region and method of forming same |
| US20060255412A1 (en) | 2005-05-13 | 2006-11-16 | Nirmal Ramaswamy | Enhanced access devices using selective epitaxial silicon over the channel region during the formation of a semiconductor device and systems including same |
| JP2008016747A (ja) | 2006-07-10 | 2008-01-24 | Fuji Electric Holdings Co Ltd | トレンチｍｏｓ型炭化珪素半導体装置およびその製造方法 |
| US7989882B2 (en) | 2007-12-07 | 2011-08-02 | Cree, Inc. | Transistor with A-face conductive channel and trench protecting well region |
| EP2091083A3 (en) | 2008-02-13 | 2009-10-14 | Denso Corporation | Silicon carbide semiconductor device including a deep layer |
| JP5463725B2 (ja) * | 2009-04-28 | 2014-04-09 | 富士電機株式会社 | 炭化珪素半導体装置およびその製造方法 |
| JP2012038771A (ja) * | 2010-08-03 | 2012-02-23 | Sumitomo Electric Ind Ltd | 半導体装置およびその製造方法 |
| JP5728992B2 (ja) | 2011-02-11 | 2015-06-03 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
| JP2012169384A (ja) | 2011-02-11 | 2012-09-06 | Denso Corp | 炭化珪素半導体装置およびその製造方法 |
| JP2012253293A (ja) | 2011-06-07 | 2012-12-20 | Sumitomo Electric Ind Ltd | 半導体装置 |
| JP6017127B2 (ja) * | 2011-09-30 | 2016-10-26 | 株式会社東芝 | 炭化珪素半導体装置 |
| JP6111673B2 (ja) * | 2012-07-25 | 2017-04-12 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
-
2013
- 2013-07-02 US US13/934,053 patent/US9024328B2/en active Active
-
2014
- 2014-06-25 JP JP2014129764A patent/JP6378552B2/ja active Active
- 2014-06-26 CA CA2855325A patent/CA2855325C/en active Active
- 2014-06-27 FR FR1456024A patent/FR3008231B1/fr active Active
- 2014-06-30 BR BR102014016200A patent/BR102014016200A2/pt not_active Application Discontinuation
- 2014-07-01 GB GB1411673.5A patent/GB2518040B/en active Active
- 2014-07-02 CN CN201410313059.6A patent/CN104282574B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| FR3008231B1 (fr) | 2017-12-22 |
| FR3008231A1 (fr) | 2015-01-09 |
| GB2518040B (en) | 2017-06-28 |
| JP2015015464A (ja) | 2015-01-22 |
| GB2518040A (en) | 2015-03-11 |
| GB201411673D0 (en) | 2014-08-13 |
| BR102014016200A2 (pt) | 2015-09-22 |
| US9024328B2 (en) | 2015-05-05 |
| CN104282574B (zh) | 2020-01-17 |
| CA2855325A1 (en) | 2015-01-02 |
| JP6378552B2 (ja) | 2018-08-22 |
| US20150008449A1 (en) | 2015-01-08 |
| CN104282574A (zh) | 2015-01-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request |
Effective date: 20190621 |