FR2910177B1 - Couche tres fine enterree - Google Patents

Couche tres fine enterree

Info

Publication number
FR2910177B1
FR2910177B1 FR0655608A FR0655608A FR2910177B1 FR 2910177 B1 FR2910177 B1 FR 2910177B1 FR 0655608 A FR0655608 A FR 0655608A FR 0655608 A FR0655608 A FR 0655608A FR 2910177 B1 FR2910177 B1 FR 2910177B1
Authority
FR
France
Prior art keywords
substrate
layer
enterree
fine
carried out
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0655608A
Other languages
English (en)
French (fr)
Other versions
FR2910177A1 (fr
Inventor
Ionut Radu
Audrey Lambert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR0655608A priority Critical patent/FR2910177B1/fr
Priority to US11/755,560 priority patent/US20080145650A1/en
Priority to SG201004392-5A priority patent/SG162813A1/en
Priority to SG200716850-3A priority patent/SG144023A1/en
Priority to JP2007279271A priority patent/JP2008177531A/ja
Priority to TW096141748A priority patent/TW200847240A/zh
Priority to CNB2007101695402A priority patent/CN100527357C/zh
Priority to KR1020070116194A priority patent/KR100944235B1/ko
Priority to EP07024512A priority patent/EP1936667B1/fr
Priority to DE602007004811T priority patent/DE602007004811D1/de
Priority to AT07024512T priority patent/ATE458270T1/de
Publication of FR2910177A1 publication Critical patent/FR2910177A1/fr
Application granted granted Critical
Publication of FR2910177B1 publication Critical patent/FR2910177B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Element Separation (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Recrystallisation Techniques (AREA)
  • Formation Of Insulating Films (AREA)
  • Lock And Its Accessories (AREA)
  • Golf Clubs (AREA)
  • Slot Machines And Peripheral Devices (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
FR0655608A 2006-12-18 2006-12-18 Couche tres fine enterree Expired - Fee Related FR2910177B1 (fr)

Priority Applications (11)

Application Number Priority Date Filing Date Title
FR0655608A FR2910177B1 (fr) 2006-12-18 2006-12-18 Couche tres fine enterree
US11/755,560 US20080145650A1 (en) 2006-12-18 2007-05-30 Double plasma utbox
SG201004392-5A SG162813A1 (en) 2006-12-18 2007-10-12 Double plasma utbox
SG200716850-3A SG144023A1 (en) 2006-12-18 2007-10-12 Double plasma utbox
JP2007279271A JP2008177531A (ja) 2006-12-18 2007-10-26 ダブルプラズマｕｔｂｏｘ
TW096141748A TW200847240A (en) 2006-12-18 2007-11-05 Double plasma utbox
CNB2007101695402A CN100527357C (zh) 2006-12-18 2007-11-09 半导体材料基板的键合方法
KR1020070116194A KR100944235B1 (ko) 2006-12-18 2007-11-14 이중 플라즈마 ｕｔｂｏｘ
EP07024512A EP1936667B1 (fr) 2006-12-18 2007-12-18 Traitement double plasma pour l'obtention d'une structure disposant d'un oxyde enterré ultra-fin
DE602007004811T DE602007004811D1 (de) 2006-12-18 2007-12-18 Doppelplasmabehandlung zur Herstellung einer Struktur mit einem vergrabenen ultradünnen Oxid
AT07024512T ATE458270T1 (de) 2006-12-18 2007-12-18 Doppelplasmabehandlung zur herstellung einer struktur mit einem vergrabenen ultradünnen oxid

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0655608A FR2910177B1 (fr) 2006-12-18 2006-12-18 Couche tres fine enterree

Publications (2)

Publication Number Publication Date
FR2910177A1 FR2910177A1 (fr) 2008-06-20
FR2910177B1 true FR2910177B1 (fr) 2009-04-03

Family

ID=38057349

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0655608A Expired - Fee Related FR2910177B1 (fr) 2006-12-18 2006-12-18 Couche tres fine enterree

Country Status (10)

Country Link
US (1) US20080145650A1 (enExample)
EP (1) EP1936667B1 (enExample)
JP (1) JP2008177531A (enExample)
KR (1) KR100944235B1 (enExample)
CN (1) CN100527357C (enExample)
AT (1) ATE458270T1 (enExample)
DE (1) DE602007004811D1 (enExample)
FR (1) FR2910177B1 (enExample)
SG (2) SG144023A1 (enExample)
TW (1) TW200847240A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2931585B1 (fr) * 2008-05-26 2010-09-03 Commissariat Energie Atomique Traitement de surface par plasma d'azote dans un procede de collage direct
US8481406B2 (en) 2010-07-15 2013-07-09 Soitec Methods of forming bonded semiconductor structures
SG177816A1 (en) * 2010-07-15 2012-02-28 Soitec Silicon On Insulator Methods of forming bonded semiconductor structures, and semiconductor structures formed by such methods
FR2987166B1 (fr) 2012-02-16 2017-05-12 Soitec Silicon On Insulator Procede de transfert d'une couche
FR2992772B1 (fr) 2012-06-28 2014-07-04 Soitec Silicon On Insulator Procede de realisation de structure composite avec collage de type metal/metal
JP6117134B2 (ja) * 2014-03-13 2017-04-19 信越化学工業株式会社 複合基板の製造方法

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0391227A (ja) * 1989-09-01 1991-04-16 Nippon Soken Inc 半導体基板の接着方法
JP3294934B2 (ja) * 1994-03-11 2002-06-24 キヤノン株式会社 半導体基板の作製方法及び半導体基板
JP3917219B2 (ja) * 1995-12-15 2007-05-23 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 貼り合わせｓｏｉウェーハの製造方法
JP2877800B2 (ja) * 1997-03-27 1999-03-31 キヤノン株式会社 複合部材の分離方法、分離された部材、分離装置、半導体基体の作製方法および半導体基体
US6180496B1 (en) * 1997-08-29 2001-01-30 Silicon Genesis Corporation In situ plasma wafer bonding method
JP3582566B2 (ja) * 1997-12-22 2004-10-27 三菱住友シリコン株式会社 Ｓｏｉ基板の製造方法
US6171982B1 (en) * 1997-12-26 2001-01-09 Canon Kabushiki Kaisha Method and apparatus for heat-treating an SOI substrate and method of preparing an SOI substrate by using the same
JPH11251207A (ja) * 1998-03-03 1999-09-17 Canon Inc Ｓｏｉ基板及びその製造方法並びにその製造設備
US6653209B1 (en) * 1999-09-30 2003-11-25 Canon Kabushiki Kaisha Method of producing silicon thin film, method of constructing SOI substrate and semiconductor device
JP2002231692A (ja) * 2001-01-30 2002-08-16 Sony Corp 半導体製造装置
US6780759B2 (en) * 2001-05-09 2004-08-24 Silicon Genesis Corporation Method for multi-frequency bonding
FR2874455B1 (fr) * 2004-08-19 2008-02-08 Soitec Silicon On Insulator Traitement thermique avant collage de deux plaquettes
US6995075B1 (en) * 2002-07-12 2006-02-07 Silicon Wafer Technologies Process for forming a fragile layer inside of a single crystalline substrate
AU2003270040A1 (en) * 2002-08-29 2004-03-19 Massachusetts Institute Of Technology Fabrication method for a monocrystalline semiconductor layer on a substrate
US6911375B2 (en) * 2003-06-02 2005-06-28 International Business Machines Corporation Method of fabricating silicon devices on sapphire with wafer bonding at low temperature
US6833195B1 (en) * 2003-08-13 2004-12-21 Intel Corporation Low temperature germanium transfer
EP1662549B1 (en) * 2003-09-01 2015-07-29 SUMCO Corporation Method for manufacturing bonded wafer
US20050067377A1 (en) * 2003-09-25 2005-03-31 Ryan Lei Germanium-on-insulator fabrication utilizing wafer bonding
WO2005055293A1 (ja) * 2003-12-02 2005-06-16 Bondtech Inc. 接合方法及びこの方法により作成されるデバイス並びに表面活性化装置及びこの装置を備えた接合装置
JP2006080314A (ja) * 2004-09-09 2006-03-23 Canon Inc 結合基板の製造方法
FR2876220B1 (fr) * 2004-10-06 2007-09-28 Commissariat Energie Atomique Procede d'elaboration de structures empilees mixtes, a zones isolantes diverses et/ou zones de conduction electrique verticale localisees.
US7105897B2 (en) * 2004-10-28 2006-09-12 Taiwan Semiconductor Manufacturing Company Semiconductor structure and method for integrating SOI devices and bulk devices
KR100634528B1 (ko) * 2004-12-03 2006-10-16 삼성전자주식회사 단결정 실리콘 필름의 제조방법
KR100601976B1 (ko) * 2004-12-08 2006-07-18 삼성전자주식회사 스트레인 실리콘 온 인슐레이터 구조체 및 그 제조방법
US8138061B2 (en) * 2005-01-07 2012-03-20 International Business Machines Corporation Quasi-hydrophobic Si-Si wafer bonding using hydrophilic Si surfaces and dissolution of interfacial bonding oxide
JP5128761B2 (ja) * 2005-05-19 2013-01-23 信越化学工業株式会社 Ｓｏｉウエーハの製造方法
US20070042566A1 (en) * 2005-08-03 2007-02-22 Memc Electronic Materials, Inc. Strained silicon on insulator (ssoi) structure with improved crystallinity in the strained silicon layer

Also Published As

Publication number Publication date
JP2008177531A (ja) 2008-07-31
KR100944235B1 (ko) 2010-02-24
US20080145650A1 (en) 2008-06-19
CN100527357C (zh) 2009-08-12
EP1936667A1 (fr) 2008-06-25
KR20080056630A (ko) 2008-06-23
DE602007004811D1 (de) 2010-04-01
FR2910177A1 (fr) 2008-06-20
TW200847240A (en) 2008-12-01
CN101207021A (zh) 2008-06-25
SG162813A1 (en) 2010-07-29
ATE458270T1 (de) 2010-03-15
EP1936667B1 (fr) 2010-02-17
SG144023A1 (en) 2008-07-29

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Legal Events

Date Code Title Description
CD Change of name or company name

Owner name: SOITEC, FR

Effective date: 20120423

ST Notification of lapse

Effective date: 20140829