FR2890783B1 - Circuit electronique integre incorporant un condensateur - Google Patents

Circuit electronique integre incorporant un condensateur

Info

Publication number
FR2890783B1
FR2890783B1 FR0509286A FR0509286A FR2890783B1 FR 2890783 B1 FR2890783 B1 FR 2890783B1 FR 0509286 A FR0509286 A FR 0509286A FR 0509286 A FR0509286 A FR 0509286A FR 2890783 B1 FR2890783 B1 FR 2890783B1
Authority
FR
France
Prior art keywords
capacitor
electronic circuit
integrated electronic
circuit incorporating
incorporating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0509286A
Other languages
English (en)
Other versions
FR2890783A1 (fr
Inventor
Joaquim Torres
Alexis Farcy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0509286A priority Critical patent/FR2890783B1/fr
Priority to US11/518,539 priority patent/US20070063240A1/en
Publication of FR2890783A1 publication Critical patent/FR2890783A1/fr
Application granted granted Critical
Publication of FR2890783B1 publication Critical patent/FR2890783B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
FR0509286A 2005-09-12 2005-09-12 Circuit electronique integre incorporant un condensateur Expired - Fee Related FR2890783B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0509286A FR2890783B1 (fr) 2005-09-12 2005-09-12 Circuit electronique integre incorporant un condensateur
US11/518,539 US20070063240A1 (en) 2005-09-12 2006-09-07 Integrated electronic circuit incorporating a capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0509286A FR2890783B1 (fr) 2005-09-12 2005-09-12 Circuit electronique integre incorporant un condensateur

Publications (2)

Publication Number Publication Date
FR2890783A1 FR2890783A1 (fr) 2007-03-16
FR2890783B1 true FR2890783B1 (fr) 2007-11-30

Family

ID=36384293

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0509286A Expired - Fee Related FR2890783B1 (fr) 2005-09-12 2005-09-12 Circuit electronique integre incorporant un condensateur

Country Status (2)

Country Link
US (1) US20070063240A1 (fr)
FR (1) FR2890783B1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101374338B1 (ko) * 2007-11-14 2014-03-14 삼성전자주식회사 관통 전극을 갖는 반도체 장치 및 그 제조방법
US8536676B2 (en) 2007-12-19 2013-09-17 Lockheed Martin Corporation Corona prevention in high power MMICs
US7968460B2 (en) 2008-06-19 2011-06-28 Micron Technology, Inc. Semiconductor with through-substrate interconnect
US9799562B2 (en) * 2009-08-21 2017-10-24 Micron Technology, Inc. Vias and conductive routing layers in semiconductor substrates
US8907457B2 (en) * 2010-02-08 2014-12-09 Micron Technology, Inc. Microelectronic devices with through-substrate interconnects and associated methods of manufacturing
US9276057B2 (en) * 2014-01-27 2016-03-01 United Microelectronics Corp. Capacitor structure and method of manufacturing the same
TWI685980B (zh) * 2017-04-25 2020-02-21 聯華電子股份有限公司 導體-絕緣體-導體電容器及其製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6088258A (en) * 1998-05-28 2000-07-11 International Business Machines Corporation Structures for reduced topography capacitors
JP3727220B2 (ja) * 2000-04-03 2005-12-14 Ｎｅｃエレクトロニクス株式会社 半導体装置
JP2002009248A (ja) * 2000-06-26 2002-01-11 Oki Electric Ind Co Ltd キャパシタおよびその製造方法
US6617208B2 (en) * 2000-08-18 2003-09-09 Texas Instruments Incorporated High capacitance damascene capacitors
JP2003051501A (ja) * 2001-05-30 2003-02-21 Mitsubishi Electric Corp 半導体装置及びその製造方法
KR100429877B1 (ko) * 2001-08-04 2004-05-04 삼성전자주식회사 금속-절연체-금속 커패시터 및 비아 컨택을 갖는 반도체소자의 제조 방법
US20040009640A1 (en) * 2001-08-17 2004-01-15 Mukul Saran High capacitance damascene capacitors
KR100428789B1 (ko) * 2001-12-05 2004-04-28 삼성전자주식회사 금속/절연막/금속 캐퍼시터 구조를 가지는 반도체 장치 및그 형성 방법
US7176082B2 (en) * 2003-04-08 2007-02-13 Lsi Logic Corporation Analog capacitor in dual damascene process
US6680521B1 (en) * 2003-04-09 2004-01-20 Newport Fab, Llc High density composite MIM capacitor with reduced voltage dependence in semiconductor dies
US7317221B2 (en) * 2003-12-04 2008-01-08 Taiwan Semiconductor Manufacturing Co., Ltd. High density MIM capacitor structure and fabrication process
KR100549002B1 (ko) * 2004-02-04 2006-02-02 삼성전자주식회사 복층 엠아이엠 커패시터를 갖는 반도체소자 및 그것을제조하는 방법
JP2006019692A (ja) * 2004-06-03 2006-01-19 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
US20070063240A1 (en) 2007-03-22
FR2890783A1 (fr) 2007-03-16

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20110531