FR2884053B1 - Transistors a film mince pour systeme d'imagerie et procede pour realiser ceux-ci - Google Patents

Transistors a film mince pour systeme d'imagerie et procede pour realiser ceux-ci

Info

Publication number
FR2884053B1
FR2884053B1 FR0602783A FR0602783A FR2884053B1 FR 2884053 B1 FR2884053 B1 FR 2884053B1 FR 0602783 A FR0602783 A FR 0602783A FR 0602783 A FR0602783 A FR 0602783A FR 2884053 B1 FR2884053 B1 FR 2884053B1
Authority
FR
France
Prior art keywords
realizing
thin film
imaging system
film transistors
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR0602783A
Other languages
English (en)
Other versions
FR2884053A1 (fr
Inventor
Douglas Albagli
William Andrew Hennessy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of FR2884053A1 publication Critical patent/FR2884053A1/fr
Application granted granted Critical
Publication of FR2884053B1 publication Critical patent/FR2884053B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
FR0602783A 2005-03-31 2006-03-30 Transistors a film mince pour systeme d'imagerie et procede pour realiser ceux-ci Active FR2884053B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/096,177 US8053777B2 (en) 2005-03-31 2005-03-31 Thin film transistors for imaging system and method of making the same

Publications (2)

Publication Number Publication Date
FR2884053A1 FR2884053A1 (fr) 2006-10-06
FR2884053B1 true FR2884053B1 (fr) 2009-10-16

Family

ID=36972814

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0602783A Active FR2884053B1 (fr) 2005-03-31 2006-03-30 Transistors a film mince pour systeme d'imagerie et procede pour realiser ceux-ci

Country Status (3)

Country Link
US (1) US8053777B2 (fr)
JP (1) JP5231718B2 (fr)
FR (1) FR2884053B1 (fr)

Family Cites Families (38)

* Cited by examiner, † Cited by third party
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JPH0216777A (ja) 1988-07-05 1990-01-19 Seikosha Co Ltd 半導体光検出装置
US5312396A (en) 1990-09-06 1994-05-17 Massachusetts Institute Of Technology Pulsed laser system for the surgical removal of tissue
JPH04133350A (ja) * 1990-09-25 1992-05-07 Fuji Xerox Co Ltd イメージセンサ
US5384271A (en) * 1993-10-04 1995-01-24 General Electric Company Method for reduction of off-current in thin film transistors
JPH07335936A (ja) * 1994-06-10 1995-12-22 Canon Inc 光電変換装置
JP3331800B2 (ja) * 1995-02-08 2002-10-07 エルジー フィリップス エルシーディー カンパニー リミテッド 電子素子及びその製造方法
JPH11501927A (ja) 1995-03-09 1999-02-16 ナクスコー ポリヌクレオチド架橋剤としての非ヌクレオシドクマリン誘導体
JP3257594B2 (ja) * 1999-02-12 2002-02-18 日本電気株式会社 イメージセンサの製造方法
DE19922650A1 (de) * 1999-05-18 2000-11-23 Philips Corp Intellectual Pty Sensormatrix
US6362028B1 (en) 1999-08-19 2002-03-26 Industrial Technology Research Institute Method for fabricating TFT array and devices formed
KR100299537B1 (ko) * 1999-08-31 2001-11-01 남상희 엑스-선 검출용 박막트랜지스터 기판 제조방법
US6396046B1 (en) 1999-11-02 2002-05-28 General Electric Company Imager with reduced FET photoresponse and high integrity contact via
KR100660813B1 (ko) * 1999-12-31 2006-12-26 엘지.필립스 엘시디 주식회사 엑스레이 디텍터용 어레이기판 제조방법
KR100351440B1 (ko) * 1999-12-31 2002-09-09 엘지.필립스 엘시디 주식회사 엑스-선 검출소자 및 그의 제조방법
KR100658978B1 (ko) * 2000-02-21 2006-12-18 엘지.필립스 엘시디 주식회사 엑스레이 디텍터용 어레이기판 제조방법
US6617561B1 (en) * 2000-03-09 2003-09-09 General Electric Company Low noise and high yield data line structure for imager
US6465286B2 (en) * 2000-12-20 2002-10-15 General Electric Company Method of fabricating an imager array
TW548689B (en) * 2001-01-25 2003-08-21 Fujitsu Display Tech Reflection type liquid crystal display device and manufacturing method thereof
US6623161B2 (en) 2001-08-28 2003-09-23 Ge Medical Systems Global Technology Company, Llc Method and apparatus for identifying and correcting line artifacts in a solid state X-ray detector
US6714191B2 (en) * 2001-09-19 2004-03-30 Genesis Microchip Inc. Method and apparatus for detecting flicker in an LCD image
US20050199969A1 (en) * 2002-03-29 2005-09-15 Chiaki Kobayashi Pressure sensor
US6559506B1 (en) * 2002-04-03 2003-05-06 General Electric Company Imaging array and methods for fabricating same
JP4183990B2 (ja) * 2002-07-11 2008-11-19 シャープ株式会社 薄膜フォトトランジスタ及びそれを用いたアクティブマトリクス基板並びにそれを用いた画像読み取り装置。
TW540128B (en) * 2002-07-12 2003-07-01 Hannstar Display Corp Manufacturing method of X-ray detector array
JP3661669B2 (ja) * 2002-07-22 2005-06-15 セイコーエプソン株式会社 アクティブマトリクス基板、電気光学装置、電子機器
JP4024642B2 (ja) 2002-10-24 2007-12-19 シャープ株式会社 画像読み取り装置および画像読み取り方法
US7307301B2 (en) * 2002-12-17 2007-12-11 General Electric Company Imaging array
JP3778195B2 (ja) * 2003-03-13 2006-05-24 セイコーエプソン株式会社 平坦化層を有する基板及びその製造方法並びに電気光学装置用基板及び電気光学装置及び電子機器
TW586223B (en) * 2003-06-26 2004-05-01 Au Optronics Corp Thin film transistor array panel and fabricating method thereof
US7495272B2 (en) * 2003-10-06 2009-02-24 Semiconductor Energy Labortaory Co., Ltd. Semiconductor device having photo sensor element and amplifier circuit
KR100957585B1 (ko) * 2003-10-15 2010-05-13 삼성전자주식회사 광 감지부를 갖는 전자 디스플레이 장치
US20050082492A1 (en) * 2003-10-17 2005-04-21 Wei-Chuan Lin Image detector with tandem-gate TFT
US7126128B2 (en) * 2004-02-13 2006-10-24 Kabushiki Kaisha Toshiba Flat panel x-ray detector
US7773139B2 (en) * 2004-04-16 2010-08-10 Apple Inc. Image sensor with photosensitive thin film transistors
US7177000B2 (en) * 2004-05-18 2007-02-13 Automotive Systems Laboratory, Inc. Liquid crystal display cell structure and manufacture process of a liquid crystal display comprising an opening formed through the color filter and partially the buffer layer
FR2883417B1 (fr) 2005-03-16 2007-05-11 Ulis Soc Par Actions Simplifie Detecteur bolometrique, dispositif de detection infrarouge mettant en oeuvre un tel detecteur et procede de fabrication de ce detecteur

Also Published As

Publication number Publication date
JP5231718B2 (ja) 2013-07-10
FR2884053A1 (fr) 2006-10-06
US20060219929A1 (en) 2006-10-05
JP2006287219A (ja) 2006-10-19
US8053777B2 (en) 2011-11-08

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