FR2880472B1 - Procede et systeme de diffusometrie - Google Patents

Procede et systeme de diffusometrie

Info

Publication number
FR2880472B1
FR2880472B1 FR0513463A FR0513463A FR2880472B1 FR 2880472 B1 FR2880472 B1 FR 2880472B1 FR 0513463 A FR0513463 A FR 0513463A FR 0513463 A FR0513463 A FR 0513463A FR 2880472 B1 FR2880472 B1 FR 2880472B1
Authority
FR
France
Prior art keywords
diffusometry
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0513463A
Other languages
English (en)
Other versions
FR2880472A1 (fr
Inventor
Nigel Peter Smith
Yi Sha Ku
Shih Chun Wang
Chun Hung Ko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Industrial Technology Research Institute ITRI
Nanometrics Inc
Original Assignee
Industrial Technology Research Institute ITRI
Accent Optical Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Industrial Technology Research Institute ITRI, Accent Optical Technologies Inc filed Critical Industrial Technology Research Institute ITRI
Publication of FR2880472A1 publication Critical patent/FR2880472A1/fr
Application granted granted Critical
Publication of FR2880472B1 publication Critical patent/FR2880472B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/4788—Diffraction
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Testing Of Optical Devices Or Fibers (AREA)
FR0513463A 2004-12-30 2005-12-29 Procede et systeme de diffusometrie Expired - Fee Related FR2880472B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW093141298A TWI269870B (en) 2004-12-30 2004-12-30 Method for deciding structure parameters of a grating

Publications (2)

Publication Number Publication Date
FR2880472A1 FR2880472A1 (fr) 2006-07-07
FR2880472B1 true FR2880472B1 (fr) 2014-02-21

Family

ID=36589713

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0513463A Expired - Fee Related FR2880472B1 (fr) 2004-12-30 2005-12-29 Procede et systeme de diffusometrie

Country Status (6)

Country Link
US (1) US7532317B2 (fr)
JP (1) JP2006226994A (fr)
KR (1) KR101257954B1 (fr)
DE (1) DE102005063087A1 (fr)
FR (1) FR2880472B1 (fr)
TW (1) TWI269870B (fr)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000072440A (ko) * 2000-08-25 2000-12-05 정권수 슬래그와 석탄연소재를 이용한 아스콘채움재 제조방법
US7791727B2 (en) * 2004-08-16 2010-09-07 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
US20080144036A1 (en) * 2006-12-19 2008-06-19 Asml Netherlands B.V. Method of measurement, an inspection apparatus and a lithographic apparatus
TWI339778B (en) * 2006-07-12 2011-04-01 Ind Tech Res Inst Method for designing gratings
US7710572B2 (en) * 2006-11-30 2010-05-04 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
US8798966B1 (en) * 2007-01-03 2014-08-05 Kla-Tencor Corporation Measuring critical dimensions of a semiconductor structure
US7858404B2 (en) * 2007-03-14 2010-12-28 Taiwan Semiconductor Manufacturing Company, Ltd. Measurement of overlay offset in semiconductor processing
JP4968470B2 (ja) * 2007-10-11 2012-07-04 大日本印刷株式会社 周期構造測定方法及びその方法を用いた周期構造測定装置
NL1036098A1 (nl) * 2007-11-08 2009-05-11 Asml Netherlands Bv Inspection method and apparatus, lithographic apparatus lithographic, processing cell and device manufacturing method.
TWI364784B (en) 2008-06-13 2012-05-21 Ind Tech Res Inst Method for designing overlay targets and method and system for measuring overlay error using the same
US8214771B2 (en) * 2009-01-08 2012-07-03 Kla-Tencor Corporation Scatterometry metrology target design optimization
US20110276319A1 (en) * 2010-05-06 2011-11-10 Jonathan Michael Madsen Determination of material optical properties for optical metrology of structures
US9885962B2 (en) * 2013-10-28 2018-02-06 Kla-Tencor Corporation Methods and apparatus for measuring semiconductor device overlay using X-ray metrology
WO2015121867A1 (fr) * 2014-02-16 2015-08-20 Nova Measuring Instruments Ltd. Optimisation d'une conception de superposition
US10210606B2 (en) * 2014-10-14 2019-02-19 Kla-Tencor Corporation Signal response metrology for image based and scatterometry overlay measurements
KR102010941B1 (ko) * 2015-03-25 2019-08-14 에이에스엠엘 네델란즈 비.브이. 계측 방법, 계측 장치 및 디바이스 제조 방법
US9995689B2 (en) * 2015-05-22 2018-06-12 Nanometrics Incorporated Optical metrology using differential fitting
US10345721B1 (en) 2015-06-16 2019-07-09 Kla-Tencor Corporation Measurement library optimization in semiconductor metrology
CN105933697B (zh) * 2016-06-30 2017-10-27 北京邮电大学 一种光栅参数输出的方法及装置
US11067389B2 (en) * 2018-03-13 2021-07-20 Kla Corporation Overlay metrology system and method
CN113029024B (zh) * 2021-03-01 2021-11-16 长鑫存储技术有限公司 半导体结构的测量方法及设备
US12131111B2 (en) 2021-03-01 2024-10-29 Changxin Memory Technologies, Inc. Method, apparatus and device for measuring semiconductor structure
US12372879B2 (en) * 2021-12-17 2025-07-29 Micron Technology, Inc. Apparatuses and methods for diffraction base overlay measurements
CN116379927B (zh) * 2023-05-31 2023-08-29 湖南隆深氢能科技有限公司 应用于贴合生产线的精准检测方法、系统以及存储介质
CN117289562B (zh) * 2023-11-22 2024-02-13 全芯智造技术有限公司 用于仿真套刻标记的方法、设备和介质
CN118464843B (zh) * 2024-07-10 2024-11-15 杭州积海半导体有限公司 散射测量方法及散射测量装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6134011A (en) * 1997-09-22 2000-10-17 Hdi Instrumentation Optical measurement system using polarized light
IL130874A (en) * 1999-07-09 2002-12-01 Nova Measuring Instr Ltd System and method for measuring pattern structures
AU2001279247A1 (en) * 2000-08-10 2002-02-25 Sensys Instruments Corporation Database interpolation method for optical measurement of diffractive microstructures
US6943900B2 (en) * 2000-09-15 2005-09-13 Timbre Technologies, Inc. Generation of a library of periodic grating diffraction signals
US6900892B2 (en) * 2000-12-19 2005-05-31 Kla-Tencor Technologies Corporation Parametric profiling using optical spectroscopic systems
US6785638B2 (en) * 2001-08-06 2004-08-31 Timbre Technologies, Inc. Method and system of dynamic learning through a regression-based library generation process
IL148484A (en) * 2002-03-04 2008-11-26 Nova Measuring Instr Ltd Optical measurements of patterned structures
US6842261B2 (en) * 2002-08-26 2005-01-11 Timbre Technologies, Inc. Integrated circuit profile value determination

Also Published As

Publication number Publication date
JP2006226994A (ja) 2006-08-31
KR20060079115A (ko) 2006-07-05
US7532317B2 (en) 2009-05-12
KR101257954B1 (ko) 2013-04-24
DE102005063087A1 (de) 2006-07-20
DE102005063087A9 (de) 2006-11-23
TW200622351A (en) 2006-07-01
US20060146347A1 (en) 2006-07-06
FR2880472A1 (fr) 2006-07-07
TWI269870B (en) 2007-01-01

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Legal Events

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CD Change of name or company name
TQ Partial transmission of property
PLFP Fee payment

Year of fee payment: 11

PLFP Fee payment

Year of fee payment: 12

ST Notification of lapse

Effective date: 20180831