FR2835970B1 - Micro-composant electronique incluant une structure capacitive - Google Patents

Micro-composant electronique incluant une structure capacitive

Info

Publication number
FR2835970B1
FR2835970B1 FR0201618A FR0201618A FR2835970B1 FR 2835970 B1 FR2835970 B1 FR 2835970B1 FR 0201618 A FR0201618 A FR 0201618A FR 0201618 A FR0201618 A FR 0201618A FR 2835970 B1 FR2835970 B1 FR 2835970B1
Authority
FR
France
Prior art keywords
electronic component
component including
capacitive structure
capacitive
electronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0201618A
Other languages
English (en)
Other versions
FR2835970A1 (fr
Inventor
Lionel Girardie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Memscap SA
Original Assignee
Memscap SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Memscap SA filed Critical Memscap SA
Priority to FR0201618A priority Critical patent/FR2835970B1/fr
Priority to FR0205465A priority patent/FR2834242B1/fr
Priority to CA002415324A priority patent/CA2415324A1/fr
Priority to US10/328,880 priority patent/US20030129446A1/en
Priority to US10/329,115 priority patent/US6713199B2/en
Priority to US10/328,881 priority patent/US20030138611A1/en
Priority to JP2002378528A priority patent/JP2003309118A/ja
Priority to EP02102892A priority patent/EP1324378A1/fr
Priority to JP2002378529A priority patent/JP2003308735A/ja
Priority to EP02102894A priority patent/EP1324379A1/fr
Priority to JP2002378530A priority patent/JP2003303514A/ja
Priority to EP02102893A priority patent/EP1323845A1/fr
Priority to CA002415309A priority patent/CA2415309A1/fr
Priority to CA002415312A priority patent/CA2415312A1/fr
Priority to PCT/FR2003/000231 priority patent/WO2003069655A2/fr
Priority to AU2003219244A priority patent/AU2003219244A1/en
Priority to US10/425,415 priority patent/US20030207097A1/en
Publication of FR2835970A1 publication Critical patent/FR2835970A1/fr
Application granted granted Critical
Publication of FR2835970B1 publication Critical patent/FR2835970B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02362—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment formation of intermediate layers, e.g. capping layers or diffusion barriers

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
FR0201618A 2001-12-31 2002-02-11 Micro-composant electronique incluant une structure capacitive Expired - Fee Related FR2835970B1 (fr)

Priority Applications (17)

Application Number Priority Date Filing Date Title
FR0201618A FR2835970B1 (fr) 2002-02-11 2002-02-11 Micro-composant electronique incluant une structure capacitive
FR0205465A FR2834242B1 (fr) 2001-12-31 2002-04-30 Structure multicouche, utilisee notamment en tant que materiau de forte permittivite relative
CA002415324A CA2415324A1 (fr) 2001-12-31 2002-12-23 Structure multicouche, utilisee notamment en tant que materiau de forte permittivite relative
US10/329,115 US6713199B2 (en) 2001-12-31 2002-12-24 Multilayer structure used especially as a material of high relative permittivity
US10/328,881 US20030138611A1 (en) 2001-12-31 2002-12-24 Multilayer structure used especially as a material of high relative permittivity
US10/328,880 US20030129446A1 (en) 2001-12-31 2002-12-24 Multilayer structure used especially as a material of high relative permittivity
EP02102894A EP1324379A1 (fr) 2001-12-31 2002-12-26 Structure multicouche utilisée notamment en tant que matériau de forte permittivité relative
JP2002378529A JP2003308735A (ja) 2001-12-31 2002-12-26 比誘電率が高い物質として特に使用される多層構造体
JP2002378528A JP2003309118A (ja) 2001-12-31 2002-12-26 比誘電率が高い物質として特に使用される多層構造体
JP2002378530A JP2003303514A (ja) 2001-12-31 2002-12-26 比誘電率が高い物質として特に使用される多層構造体
EP02102893A EP1323845A1 (fr) 2001-12-31 2002-12-26 Structure multicouche
EP02102892A EP1324378A1 (fr) 2001-12-31 2002-12-26 Structure multicouche, utilisée notamment en tant que matériau de forte permittivité relative
CA002415309A CA2415309A1 (fr) 2001-12-31 2002-12-30 Structure multicouche, utilisee notamment en tant que materiau de forte permittivite relative
CA002415312A CA2415312A1 (fr) 2001-12-31 2002-12-30 Structure multicouche, utilisee notamment en tant que materiau de forte permittivite relative
PCT/FR2003/000231 WO2003069655A2 (fr) 2002-02-11 2003-01-24 Micro-composant electronique incluant une structure capacitive.
AU2003219244A AU2003219244A1 (en) 2002-02-11 2003-01-24 Electronic micro component including a capacitive structure
US10/425,415 US20030207097A1 (en) 2001-12-31 2003-04-29 Multilayer structure used especially as a material of high relative permittivity

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0201618A FR2835970B1 (fr) 2002-02-11 2002-02-11 Micro-composant electronique incluant une structure capacitive

Publications (2)

Publication Number Publication Date
FR2835970A1 FR2835970A1 (fr) 2003-08-15
FR2835970B1 true FR2835970B1 (fr) 2005-02-25

Family

ID=27620063

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0201618A Expired - Fee Related FR2835970B1 (fr) 2001-12-31 2002-02-11 Micro-composant electronique incluant une structure capacitive

Country Status (3)

Country Link
AU (1) AU2003219244A1 (fr)
FR (1) FR2835970B1 (fr)
WO (1) WO2003069655A2 (fr)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DD297279A5 (de) * 1990-08-14 1992-01-02 ��������@���������������@����������������������@���k�� Kondensatoranordnung mit grosser kapazitaet und verfahren zur herstellung derselben
DE19632835C1 (de) * 1996-08-14 1998-04-02 Siemens Ag Verfahren zur Herstellung eines Kondensators in einer Halbeiteranordnung
GB2322964B (en) * 1997-03-07 2001-10-17 United Microelectronics Corp Polysilicon CMP process for high-density DRAM cell structures
JP3319994B2 (ja) * 1997-09-29 2002-09-03 シャープ株式会社 半導体記憶素子
TW399211B (en) * 1998-08-14 2000-07-21 Winbond Electronics Corp The multiple stage sensor device applied to flash memory
US6087216A (en) * 1998-11-18 2000-07-11 United Microelectronics Corp. Method of manufacturing DRAM capacitor
FR2801425B1 (fr) * 1999-11-18 2004-05-28 St Microelectronics Sa Capacite integree a dielectrique hybride
JP2001168301A (ja) * 1999-12-09 2001-06-22 Nec Corp 半導体装置及びその製造方法
US6407435B1 (en) * 2000-02-11 2002-06-18 Sharp Laboratories Of America, Inc. Multilayer dielectric stack and method
US6420267B1 (en) * 2000-04-18 2002-07-16 Infineon Technologies Ag Method for forming an integrated barrier/plug for a stacked capacitor

Also Published As

Publication number Publication date
WO2003069655A3 (fr) 2004-03-11
AU2003219244A1 (en) 2003-09-04
WO2003069655A2 (fr) 2003-08-21
FR2835970A1 (fr) 2003-08-15

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Effective date: 20061031

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