FR2805654B1 - Procede et dispositif servant a rafraichir le contenu d'au moins une cellule de memoire d'une memoire morte - Google Patents

Procede et dispositif servant a rafraichir le contenu d'au moins une cellule de memoire d'une memoire morte

Info

Publication number
FR2805654B1
FR2805654B1 FR0017166A FR0017166A FR2805654B1 FR 2805654 B1 FR2805654 B1 FR 2805654B1 FR 0017166 A FR0017166 A FR 0017166A FR 0017166 A FR0017166 A FR 0017166A FR 2805654 B1 FR2805654 B1 FR 2805654B1
Authority
FR
France
Prior art keywords
memory
refrigerating
content
dead
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0017166A
Other languages
English (en)
Other versions
FR2805654A1 (fr
Inventor
Axel Aue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of FR2805654A1 publication Critical patent/FR2805654A1/fr
Application granted granted Critical
Publication of FR2805654B1 publication Critical patent/FR2805654B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/34Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3431Circuits or methods to detect disturbed nonvolatile memory cells, e.g. which still read as programmed but with threshold less than the program verify threshold or read as erased but with threshold greater than the erase verify threshold, and to reverse the disturbance via a refreshing programming or erasing step
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/34Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418Disturbance prevention or evaluation; Refreshing of disturbed memory data
FR0017166A 1999-12-30 2000-12-28 Procede et dispositif servant a rafraichir le contenu d'au moins une cellule de memoire d'une memoire morte Expired - Fee Related FR2805654B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19964012A DE19964012A1 (de) 1999-12-30 1999-12-30 Verfahren und Einrichtung zum Refresh des Speicherinhalts einer Speicherzelle eines Festwertspeichers

Publications (2)

Publication Number Publication Date
FR2805654A1 FR2805654A1 (fr) 2001-08-31
FR2805654B1 true FR2805654B1 (fr) 2008-01-11

Family

ID=7935145

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0017166A Expired - Fee Related FR2805654B1 (fr) 1999-12-30 2000-12-28 Procede et dispositif servant a rafraichir le contenu d'au moins une cellule de memoire d'une memoire morte

Country Status (4)

Country Link
US (1) US6438056B2 (fr)
JP (1) JP2001236792A (fr)
DE (1) DE19964012A1 (fr)
FR (1) FR2805654B1 (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2383455B (en) * 2001-12-21 2004-02-25 Motorola Inc Non-volatile memory and method for operating a non-volatile memory
DE10305008A1 (de) * 2003-02-07 2004-08-19 Robert Bosch Gmbh Verfahren und Vorrichtung zur Überwachung einer elektronischen Steuerung
KR100782807B1 (ko) * 2003-02-11 2007-12-06 삼성전자주식회사 첵섬 기입 방법 및 그에 따른 첵섬 확인 장치
US7327612B2 (en) * 2005-01-31 2008-02-05 Hewlett-Packard Development Company, L.P. Method and apparatus for providing the proper voltage to a memory
US7516395B2 (en) * 2005-10-12 2009-04-07 Nokia Corporation Memory checking apparatus and method
US8645793B2 (en) 2008-06-03 2014-02-04 Marvell International Ltd. Statistical tracking for flash memory
US7808834B1 (en) * 2007-04-13 2010-10-05 Marvell International Ltd. Incremental memory refresh
JP5475942B2 (ja) * 2007-07-30 2014-04-16 株式会社メガチップス 不揮発性半導体記憶装置
US8031526B1 (en) 2007-08-23 2011-10-04 Marvell International Ltd. Write pre-compensation for nonvolatile memory
US8189381B1 (en) 2007-08-28 2012-05-29 Marvell International Ltd. System and method for reading flash memory cells
US8085605B2 (en) 2007-08-29 2011-12-27 Marvell World Trade Ltd. Sequence detection for flash memory with inter-cell interference
JP4525816B2 (ja) * 2007-09-28 2010-08-18 株式会社デンソー 電子機器及びプログラム
US7894254B2 (en) * 2009-07-15 2011-02-22 Macronix International Co., Ltd. Refresh circuitry for phase change memory
JP5271225B2 (ja) * 2009-09-28 2013-08-21 株式会社日立製作所 半導体装置、及び、記憶セルの記憶状態の補正方法
JP2010055746A (ja) * 2009-12-07 2010-03-11 Toshiba Corp 記憶媒体再生装置、記憶媒体再生方法および記憶媒体再生プログラム
JP2012190538A (ja) * 2012-05-25 2012-10-04 Toshiba Corp 記憶装置、記憶媒体再生方法および記憶媒体再生プログラム
DE102019203351A1 (de) * 2019-03-12 2020-09-17 Robert Bosch Gmbh Verfahren und Vorrichtung zum Betreiben einer nichtflüchtigen Speichereinrichtung

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4218764A (en) * 1978-10-03 1980-08-19 Matsushita Electric Industrial Co., Ltd. Non-volatile memory refresh control circuit
US5239505A (en) * 1990-12-28 1993-08-24 Intel Corporation Floating gate non-volatile memory with blocks and memory refresh
US5479170A (en) * 1992-10-16 1995-12-26 California Institute Of Technology Method and apparatus for long-term multi-valued storage in dynamic analog memory
US5392251A (en) * 1993-07-13 1995-02-21 Micron Semiconductor, Inc. Controlling dynamic memory refresh cycle time
JP3644058B2 (ja) * 1994-11-29 2005-04-27 株式会社デンソー 車載エンジンの電子制御装置及びeepromのデータ再書込制御装置
JPH09320300A (ja) * 1996-05-28 1997-12-12 Mitsubishi Electric Corp 半導体記憶装置
JP3596989B2 (ja) * 1996-10-03 2004-12-02 邦博 浅田 半導体記憶装置
JP3505331B2 (ja) * 1996-11-29 2004-03-08 三洋電機株式会社 不揮発性半導体メモリ装置
US5835413A (en) * 1996-12-20 1998-11-10 Intel Corporation Method for improved data retention in a nonvolatile writeable memory by sensing and reprogramming cell voltage levels
US5852582A (en) * 1997-02-18 1998-12-22 Advanced Micro Devices, Inc. Non-volatile storage device refresh time detector
JPH10255487A (ja) * 1997-03-10 1998-09-25 Fujitsu Ltd 半導体メモリ装置
US6005824A (en) * 1998-06-30 1999-12-21 Lsi Logic Corporation Inherently compensated clocking circuit for dynamic random access memory
US6269039B1 (en) * 2000-04-04 2001-07-31 International Business Machines Corp. System and method for refreshing memory devices

Also Published As

Publication number Publication date
US20010019510A1 (en) 2001-09-06
JP2001236792A (ja) 2001-08-31
US6438056B2 (en) 2002-08-20
FR2805654A1 (fr) 2001-08-31
DE19964012A1 (de) 2001-07-12

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Effective date: 20110831