FR2805654B1 - Procede et dispositif servant a rafraichir le contenu d'au moins une cellule de memoire d'une memoire morte - Google Patents
Procede et dispositif servant a rafraichir le contenu d'au moins une cellule de memoire d'une memoire morteInfo
- Publication number
- FR2805654B1 FR2805654B1 FR0017166A FR0017166A FR2805654B1 FR 2805654 B1 FR2805654 B1 FR 2805654B1 FR 0017166 A FR0017166 A FR 0017166A FR 0017166 A FR0017166 A FR 0017166A FR 2805654 B1 FR2805654 B1 FR 2805654B1
- Authority
- FR
- France
- Prior art keywords
- memory
- refrigerating
- content
- dead
- memory cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
- G11C16/3431—Circuits or methods to detect disturbed nonvolatile memory cells, e.g. which still read as programmed but with threshold less than the program verify threshold or read as erased but with threshold greater than the erase verify threshold, and to reverse the disturbance via a refreshing programming or erasing step
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19964012A DE19964012A1 (de) | 1999-12-30 | 1999-12-30 | Verfahren und Einrichtung zum Refresh des Speicherinhalts einer Speicherzelle eines Festwertspeichers |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2805654A1 FR2805654A1 (fr) | 2001-08-31 |
FR2805654B1 true FR2805654B1 (fr) | 2008-01-11 |
Family
ID=7935145
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0017166A Expired - Fee Related FR2805654B1 (fr) | 1999-12-30 | 2000-12-28 | Procede et dispositif servant a rafraichir le contenu d'au moins une cellule de memoire d'une memoire morte |
Country Status (4)
Country | Link |
---|---|
US (1) | US6438056B2 (fr) |
JP (1) | JP2001236792A (fr) |
DE (1) | DE19964012A1 (fr) |
FR (1) | FR2805654B1 (fr) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2383455B (en) * | 2001-12-21 | 2004-02-25 | Motorola Inc | Non-volatile memory and method for operating a non-volatile memory |
DE10305008A1 (de) * | 2003-02-07 | 2004-08-19 | Robert Bosch Gmbh | Verfahren und Vorrichtung zur Überwachung einer elektronischen Steuerung |
KR100782807B1 (ko) * | 2003-02-11 | 2007-12-06 | 삼성전자주식회사 | 첵섬 기입 방법 및 그에 따른 첵섬 확인 장치 |
US7327612B2 (en) * | 2005-01-31 | 2008-02-05 | Hewlett-Packard Development Company, L.P. | Method and apparatus for providing the proper voltage to a memory |
US7516395B2 (en) * | 2005-10-12 | 2009-04-07 | Nokia Corporation | Memory checking apparatus and method |
US8645793B2 (en) | 2008-06-03 | 2014-02-04 | Marvell International Ltd. | Statistical tracking for flash memory |
US7808834B1 (en) * | 2007-04-13 | 2010-10-05 | Marvell International Ltd. | Incremental memory refresh |
JP5475942B2 (ja) * | 2007-07-30 | 2014-04-16 | 株式会社メガチップス | 不揮発性半導体記憶装置 |
US8031526B1 (en) | 2007-08-23 | 2011-10-04 | Marvell International Ltd. | Write pre-compensation for nonvolatile memory |
US8189381B1 (en) | 2007-08-28 | 2012-05-29 | Marvell International Ltd. | System and method for reading flash memory cells |
US8085605B2 (en) | 2007-08-29 | 2011-12-27 | Marvell World Trade Ltd. | Sequence detection for flash memory with inter-cell interference |
JP4525816B2 (ja) * | 2007-09-28 | 2010-08-18 | 株式会社デンソー | 電子機器及びプログラム |
US7894254B2 (en) * | 2009-07-15 | 2011-02-22 | Macronix International Co., Ltd. | Refresh circuitry for phase change memory |
JP5271225B2 (ja) * | 2009-09-28 | 2013-08-21 | 株式会社日立製作所 | 半導体装置、及び、記憶セルの記憶状態の補正方法 |
JP2010055746A (ja) * | 2009-12-07 | 2010-03-11 | Toshiba Corp | 記憶媒体再生装置、記憶媒体再生方法および記憶媒体再生プログラム |
JP2012190538A (ja) * | 2012-05-25 | 2012-10-04 | Toshiba Corp | 記憶装置、記憶媒体再生方法および記憶媒体再生プログラム |
DE102019203351A1 (de) * | 2019-03-12 | 2020-09-17 | Robert Bosch Gmbh | Verfahren und Vorrichtung zum Betreiben einer nichtflüchtigen Speichereinrichtung |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4218764A (en) * | 1978-10-03 | 1980-08-19 | Matsushita Electric Industrial Co., Ltd. | Non-volatile memory refresh control circuit |
US5239505A (en) * | 1990-12-28 | 1993-08-24 | Intel Corporation | Floating gate non-volatile memory with blocks and memory refresh |
US5479170A (en) * | 1992-10-16 | 1995-12-26 | California Institute Of Technology | Method and apparatus for long-term multi-valued storage in dynamic analog memory |
US5392251A (en) * | 1993-07-13 | 1995-02-21 | Micron Semiconductor, Inc. | Controlling dynamic memory refresh cycle time |
JP3644058B2 (ja) * | 1994-11-29 | 2005-04-27 | 株式会社デンソー | 車載エンジンの電子制御装置及びeepromのデータ再書込制御装置 |
JPH09320300A (ja) * | 1996-05-28 | 1997-12-12 | Mitsubishi Electric Corp | 半導体記憶装置 |
JP3596989B2 (ja) * | 1996-10-03 | 2004-12-02 | 邦博 浅田 | 半導体記憶装置 |
JP3505331B2 (ja) * | 1996-11-29 | 2004-03-08 | 三洋電機株式会社 | 不揮発性半導体メモリ装置 |
US5835413A (en) * | 1996-12-20 | 1998-11-10 | Intel Corporation | Method for improved data retention in a nonvolatile writeable memory by sensing and reprogramming cell voltage levels |
US5852582A (en) * | 1997-02-18 | 1998-12-22 | Advanced Micro Devices, Inc. | Non-volatile storage device refresh time detector |
JPH10255487A (ja) * | 1997-03-10 | 1998-09-25 | Fujitsu Ltd | 半導体メモリ装置 |
US6005824A (en) * | 1998-06-30 | 1999-12-21 | Lsi Logic Corporation | Inherently compensated clocking circuit for dynamic random access memory |
US6269039B1 (en) * | 2000-04-04 | 2001-07-31 | International Business Machines Corp. | System and method for refreshing memory devices |
-
1999
- 1999-12-30 DE DE19964012A patent/DE19964012A1/de not_active Ceased
-
2000
- 2000-12-26 JP JP2000394974A patent/JP2001236792A/ja active Pending
- 2000-12-28 FR FR0017166A patent/FR2805654B1/fr not_active Expired - Fee Related
- 2000-12-29 US US09/750,666 patent/US6438056B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20010019510A1 (en) | 2001-09-06 |
JP2001236792A (ja) | 2001-08-31 |
US6438056B2 (en) | 2002-08-20 |
FR2805654A1 (fr) | 2001-08-31 |
DE19964012A1 (de) | 2001-07-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20110831 |