FR2799283B1 - Procede pour examiner la surface d'une tranche de gravure - Google Patents

Procede pour examiner la surface d'une tranche de gravure

Info

Publication number
FR2799283B1
FR2799283B1 FR0012446A FR0012446A FR2799283B1 FR 2799283 B1 FR2799283 B1 FR 2799283B1 FR 0012446 A FR0012446 A FR 0012446A FR 0012446 A FR0012446 A FR 0012446A FR 2799283 B1 FR2799283 B1 FR 2799283B1
Authority
FR
France
Prior art keywords
examining
etching wafer
wafer
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0012446A
Other languages
English (en)
Other versions
FR2799283A1 (fr
Inventor
Tae Yeol Heo
Kyoo Chul Cho
Kyong Rim Kang
Soo Yeul Choi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of FR2799283A1 publication Critical patent/FR2799283A1/fr
Application granted granted Critical
Publication of FR2799283B1 publication Critical patent/FR2799283B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/94—Investigating contamination, e.g. dust
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G01N2021/8822—Dark field detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
FR0012446A 1999-09-30 2000-09-29 Procede pour examiner la surface d'une tranche de gravure Expired - Fee Related FR2799283B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019990042036A KR100327340B1 (ko) 1999-09-30 1999-09-30 웨이퍼 표면 검사방법

Publications (2)

Publication Number Publication Date
FR2799283A1 FR2799283A1 (fr) 2001-04-06
FR2799283B1 true FR2799283B1 (fr) 2008-07-25

Family

ID=19613402

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0012446A Expired - Fee Related FR2799283B1 (fr) 1999-09-30 2000-09-29 Procede pour examiner la surface d'une tranche de gravure

Country Status (7)

Country Link
US (1) US6724474B1 (fr)
JP (1) JP2001153636A (fr)
KR (1) KR100327340B1 (fr)
DE (1) DE10048432A1 (fr)
FR (1) FR2799283B1 (fr)
GB (1) GB2356047B (fr)
TW (1) TW462100B (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6303423B1 (en) * 1998-12-21 2001-10-16 Megic Corporation Method for forming high performance system-on-chip using post passivation process
KR20040048543A (ko) * 2002-12-03 2004-06-10 삼성전자주식회사 반도체 제조에서의 결점 분석 방법
US20050008640A1 (en) * 2003-04-23 2005-01-13 Wendy Waegell Method of treating transplant rejection
DE10330005B4 (de) * 2003-07-03 2006-12-21 Leica Microsystems Semiconductor Gmbh Vorrichtung zur Inspektion eines Wafers
US7317521B2 (en) 2003-09-18 2008-01-08 Micron Technology, Inc. Particle detection method
US7076320B1 (en) * 2004-05-04 2006-07-11 Advanced Micro Devices, Inc. Scatterometry monitor in cluster process tool environment for advanced process control (APC)
US8384189B2 (en) * 2005-03-29 2013-02-26 Megica Corporation High performance system-on-chip using post passivation process
JP4973660B2 (ja) 2006-06-07 2012-07-11 株式会社Ｓｕｍｃｏ 単結晶シリコンウェーハのｃｏｐ発生要因の判定方法
JP4640504B2 (ja) 2006-06-09 2011-03-02 株式会社Ｓｕｍｃｏ 単結晶シリコンウェーハのｃｏｐ評価方法
JP5427808B2 (ja) * 2011-02-28 2014-02-26 株式会社日立ハイテクノロジーズ 検査装置
JP6493136B2 (ja) * 2015-10-06 2019-04-03 株式会社Sumco ウェーハ検査方法およびウェーハ検査装置
GB201518322D0 (en) 2015-10-16 2015-12-02 Rolls Royce Plc A method for classifying a defect in a component intended to have a monocrystalline
CN111670445B (zh) * 2018-01-31 2024-03-22 Asml荷兰有限公司 基于过程参数的衬底标记方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2722362B2 (ja) * 1992-03-27 1998-03-04 三井金属鉱業株式会社 粒子または欠陥の大きさ情報の測定方法および装置
JP3285111B2 (ja) * 1994-12-05 2002-05-27 信越半導体株式会社 結晶欠陥の少ないシリコン単結晶の製造方法
US6118525A (en) * 1995-03-06 2000-09-12 Ade Optical Systems Corporation Wafer inspection system for distinguishing pits and particles
US5903342A (en) * 1995-04-10 1999-05-11 Hitachi Electronics Engineering, Co., Ltd. Inspection method and device of wafer surface
JP3686160B2 (ja) * 1995-04-10 2005-08-24 株式会社日立ハイテクノロジーズ ウエハ表面検査方法および検査装置
JP2885694B2 (ja) * 1996-04-25 1999-04-26 山口日本電気株式会社 半導体基板表面の自動外観検査装置
EP0803803B1 (fr) 1996-04-26 2008-10-01 Texas Instruments Incorporated Procédé pour configurer un dispositif de transfert de paquets de données
US6081325A (en) * 1996-06-04 2000-06-27 Kla-Tencor Corporation Optical scanning system for surface inspection
JP3737585B2 (ja) * 1996-11-29 2006-01-18 芝浦メカトロニクス株式会社 半導体ウエハの表面検査方法および半導体装置の製造装置
TW482898B (en) * 1996-12-04 2002-04-11 Ade Optical Syst Corp A surface inspection system and method for distinguishing between particle defects and pit defects on a surface of a workpiece.
JPH1164234A (ja) * 1997-08-20 1999-03-05 Advantest Corp 異物検出方法、および異物検出装置
JPH11142127A (ja) * 1997-11-11 1999-05-28 Topcon Corp ウェーハ表面検査方法とその装置
EP1125113A1 (fr) * 1998-10-29 2001-08-22 Applied Materials, Inc. Procede et appareil de detection amelioree des defauts
US6091493A (en) * 1999-03-30 2000-07-18 Scatter Works, Inc. Process for particle size measurement

Also Published As

Publication number Publication date
KR20010029287A (ko) 2001-04-06
DE10048432A1 (de) 2001-05-31
GB0023795D0 (en) 2000-11-08
GB2356047B (en) 2003-11-26
TW462100B (en) 2001-11-01
US6724474B1 (en) 2004-04-20
KR100327340B1 (ko) 2002-03-06
JP2001153636A (ja) 2001-06-08
FR2799283A1 (fr) 2001-04-06
GB2356047A (en) 2001-05-09

Similar Documents

Publication Publication Date Title
MA26914A1 (fr) Derives bicycliques substitues pour le traitement d'une croissance cellulaire anormale
FR07C0046I2 (fr) Beta-l-2'-desoxy-nucleosides pour le traitement de l'hepatite b
FR2799283B1 (fr) Procede pour examiner la surface d'une tranche de gravure
ITMI991580A0 (it) Metodo per la preparazione di citalopram
MA26822A1 (fr) Composes pour le traitement d'une ischemie.
ITMI992696A0 (it) Metodo per la preparazione di 5-cianoftalide
ITMI20000112A0 (it) Metodo per la preparazione di 5-cianoftalide
MA25984A1 (fr) Procede pour preparation de maleate d'amlodipine.
FR2827423B1 (fr) Procede d'amelioration d'etat de surface
DZ3079A1 (fr) Procédé pour la préparation de 4-carboxy-amino-2-substitué-1,2,3,4 tétrahydroquinolé.
IT1298535B1 (it) Procedimento per la produzione di gamma-butirrolattone
DZ3014A1 (fr) Médicaments pour le traitement de l'hypertension.
FR2770216B1 (fr) Procede d'obtention de la forme polymorphe epsilon de l'hexanitrohexaazaisowurtzitane
FR2780483B1 (fr) Coupe-circuit pour installation de manutention de fluide sous pression
FR2818979B1 (fr) Procede de preparation d'imidaclopride
ITRE990061A0 (it) Metodo ad elevata flessibilita' di utilizzo per la fabbricazione di pi astrelle ceramiche di formato diverso, attrezzatura per la sua attuazi
FR2779006B1 (fr) Procede de formation de silicium poreux dans un substrat de silicium, en particulier pour l'amelioration des performances d'un circuit inductif
FR2744648B1 (fr) Procede de preparation d'agents tensioactifs
FR2795206B1 (fr) Procede de modification d'orientation geometrique d'une image
IT1319242B1 (it) Processo per la preparazione di maleato di fluvossamina.
FR2781603B1 (fr) Procede de formation d'une capacite sur un circuit integre
FR2718286B1 (fr) Procédé d'attaque de tranches de semi-conducteur.
DE50014180D1 (de) Bearbeitungsgerät für die Tiefenlockerung von Böden
FR2799753B1 (fr) Procede perfectionne de fabrication d'anhydrides symetriques
FR2810915B1 (fr) Procede de determination de la duree de polissage de la surface d'une plaquette de circuits integres

Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20160531