FR2773635B1 - Dispositif et procede de lecture re-ecriture d'une cellule-memoire vive dynamique - Google Patents

Dispositif et procede de lecture re-ecriture d'une cellule-memoire vive dynamique

Info

Publication number
FR2773635B1
FR2773635B1 FR9800372A FR9800372A FR2773635B1 FR 2773635 B1 FR2773635 B1 FR 2773635B1 FR 9800372 A FR9800372 A FR 9800372A FR 9800372 A FR9800372 A FR 9800372A FR 2773635 B1 FR2773635 B1 FR 2773635B1
Authority
FR
France
Prior art keywords
memory cell
dynamic live
live memory
rewrite
reading
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9800372A
Other languages
English (en)
Other versions
FR2773635A1 (fr
Inventor
Richard Ferrant
Michel Bouche
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR9800372A priority Critical patent/FR2773635B1/fr
Priority to US09/231,423 priority patent/US6360294B1/en
Publication of FR2773635A1 publication Critical patent/FR2773635A1/fr
Application granted granted Critical
Publication of FR2773635B1 publication Critical patent/FR2773635B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
FR9800372A 1998-01-15 1998-01-15 Dispositif et procede de lecture re-ecriture d'une cellule-memoire vive dynamique Expired - Fee Related FR2773635B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR9800372A FR2773635B1 (fr) 1998-01-15 1998-01-15 Dispositif et procede de lecture re-ecriture d'une cellule-memoire vive dynamique
US09/231,423 US6360294B1 (en) 1998-01-15 1999-01-14 Device and method for simultaneously reading/rewriting a dynamic random-access memory cell using a plurality of amplifiers and isolation circuitry

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9800372A FR2773635B1 (fr) 1998-01-15 1998-01-15 Dispositif et procede de lecture re-ecriture d'une cellule-memoire vive dynamique

Publications (2)

Publication Number Publication Date
FR2773635A1 FR2773635A1 (fr) 1999-07-16
FR2773635B1 true FR2773635B1 (fr) 2003-01-10

Family

ID=9521803

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9800372A Expired - Fee Related FR2773635B1 (fr) 1998-01-15 1998-01-15 Dispositif et procede de lecture re-ecriture d'une cellule-memoire vive dynamique

Country Status (2)

Country Link
US (1) US6360294B1 (fr)
FR (1) FR2773635B1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6282606B1 (en) * 1999-04-02 2001-08-28 Silicon Aquarius, Inc. Dynamic random access memories with hidden refresh and utilizing one-transistor, one-capacitor cells, systems and methods
EP1307884A2 (fr) * 2000-07-07 2003-05-07 Mosaid Technologies Incorporated Architecture dram a haut debit dotee d'une capacite d'acces uniforme

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3949383A (en) * 1974-12-23 1976-04-06 Ibm Corporation D. C. Stable semiconductor memory cell
US5587952A (en) * 1984-12-17 1996-12-24 Hitachi, Ltd. Dynamic random access memory including read preamplifiers activated before rewrite amplifiers
US4980863A (en) * 1987-03-31 1990-12-25 Kabushiki Kaisha Toshiba Semiconductor memory device having switching circuit for coupling together two pairs of bit lines
JPS63247997A (ja) * 1987-04-01 1988-10-14 Mitsubishi Electric Corp 半導体記憶装置
JPH04318391A (ja) * 1991-04-16 1992-11-09 Mitsubishi Electric Corp 半導体記憶装置
US5291443A (en) * 1991-06-26 1994-03-01 Micron Technology, Inc. Simultaneous read and refresh of different rows in a dram
KR970029816A (ko) * 1995-11-20 1997-06-26 문정환 반도체 메모리 장치의 메모리 구동방법
US5663916A (en) * 1996-05-21 1997-09-02 Elonex I.P. Holdings, Ltd. Apparatus and method for minimizing DRAM recharge time
JPH10106257A (ja) * 1996-09-06 1998-04-24 Texas Instr Inc <Ti> 集積回路のメモリ装置及びプリチャージ動作を与える方法

Also Published As

Publication number Publication date
US6360294B1 (en) 2002-03-19
FR2773635A1 (fr) 1999-07-16

Similar Documents

Publication Publication Date Title
FR2774209B1 (fr) Procede de controle du circuit de lecture d&#39;un plan memoire et dispositif de memoire correspondant
FR2778012B1 (fr) Dispositif et procede de lecture de cellules de memoire eeprom
DE69531093D1 (de) Lese- und Wiederherstellungsverfahren eines Mehrzustand-DRAM-Speichers
DE69612783D1 (de) Leseverfahren eines ferroelektrischen Speichers
FR2802674B1 (fr) Dispositif et procede de controle d&#39;acces a des ressources
FR2742621B1 (fr) Dispositif de lecture de carte d&#39;identification
FR2726934B1 (fr) Procede de lecture anticipee de memoire a acces serie et memoire s&#39;y rapportant
FR2761111B1 (fr) Procede et appareil d&#39;acquisition de donnees dans un puits d&#39;hydrocarbure
FR2733111B1 (fr) Procede de detection a cycles d&#39;integration et de lecture repartis pour camera a balayage, et barrette de detection correspondante
FR2860910B1 (fr) Dispositif a jonction tunnel magnetique et procede d&#39;ecriture/lecture d&#39;un tel dispositif
FR2776096B1 (fr) Procede et systeme de lecture d&#39;un ensemble dynamique d&#39;etiquettes portant des codes d&#39;identification distincts
FR2774785B1 (fr) Procede de gestion d&#39;application et appareil de traitement d&#39;information utilisant le procede
FR2733065B1 (fr) Procede et circuit de lecture anticipee d&#39;instrutions/ donnees utilisant un cache de lecture anticipee non consulte
DE69720873D1 (de) Speicherzugriffsverfahren und datenprozessor
FR2773635B1 (fr) Dispositif et procede de lecture re-ecriture d&#39;une cellule-memoire vive dynamique
FR2768847B1 (fr) Dispositif et procede de lecture/re-ecriture d&#39;une cellule-memoire vive dynamique
FR2749967B1 (fr) Dispositif de lecture de cellules d&#39;une memoire
FR2820846B1 (fr) Dispositif et procede de gestion d&#39;acces a un support d&#39;enregistrement
FR2823364B1 (fr) Dispositif et procede de protection partielle en lecture d&#39;une memoire non volatile
FR2824176B1 (fr) Procede et dispositif de lecture de cellules de memoire dynamique
KR960008843A (ko) 레이머-드랩 효과를 이용하는 비-파괴성 판독 강유전성 메모리 셀과 데이타 저장 및 복구 방법
FR2779855B1 (fr) Procede et dispositif de gestion par carte a puce d&#39;une dechetterie
FR2736782B1 (fr) Dispositif et procede de lecture d&#39;une matrice de detecteurs photoniques
FR2810150B1 (fr) Dispositif de memoire vive dynamique et procede de commande d&#39;un acces en lecture d&#39;une telle memoire
FR2765716B1 (fr) Support d&#39;enregistrement optique a deux niveaux superposes, dispositif d&#39;enregistrement et procede de lecture correspondants

Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20070930