FR2772984B1 - Procede de formation d'un reseau regulier d'ilots semi-conducteurs sur un substrat isolant - Google Patents
Procede de formation d'un reseau regulier d'ilots semi-conducteurs sur un substrat isolantInfo
- Publication number
- FR2772984B1 FR2772984B1 FR9716158A FR9716158A FR2772984B1 FR 2772984 B1 FR2772984 B1 FR 2772984B1 FR 9716158 A FR9716158 A FR 9716158A FR 9716158 A FR9716158 A FR 9716158A FR 2772984 B1 FR2772984 B1 FR 2772984B1
- Authority
- FR
- France
- Prior art keywords
- ilots
- semiconductor
- forming
- insulating substrate
- regular network
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
- H01L21/02645—Seed materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02647—Lateral overgrowth
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Composite Materials (AREA)
- Thin Film Transistor (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9716158A FR2772984B1 (fr) | 1997-12-19 | 1997-12-19 | Procede de formation d'un reseau regulier d'ilots semi-conducteurs sur un substrat isolant |
PCT/FR1998/002769 WO1999033099A1 (fr) | 1997-12-19 | 1998-12-17 | Procede de formation d'un reseau regulier d'ilots semi-conducteurs sur un substrat isolant |
EP98962497A EP1040515A1 (fr) | 1997-12-19 | 1998-12-17 | Procede de formation d'un reseau regulier d'ilots semi-conducteurs sur un substrat isolant |
US09/554,277 US6365491B1 (en) | 1997-12-19 | 1998-12-17 | Method for forming a uniform network of semiconductor islands on an insulating substrate |
JP2000525915A JP2001527289A (ja) | 1997-12-19 | 1998-12-17 | 絶縁性基体上に半導体アイランドからなる規則的ネットワークを形成するための方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9716158A FR2772984B1 (fr) | 1997-12-19 | 1997-12-19 | Procede de formation d'un reseau regulier d'ilots semi-conducteurs sur un substrat isolant |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2772984A1 FR2772984A1 (fr) | 1999-06-25 |
FR2772984B1 true FR2772984B1 (fr) | 2003-07-25 |
Family
ID=9514840
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9716158A Expired - Lifetime FR2772984B1 (fr) | 1997-12-19 | 1997-12-19 | Procede de formation d'un reseau regulier d'ilots semi-conducteurs sur un substrat isolant |
Country Status (5)
Country | Link |
---|---|
US (1) | US6365491B1 (fr) |
EP (1) | EP1040515A1 (fr) |
JP (1) | JP2001527289A (fr) |
FR (1) | FR2772984B1 (fr) |
WO (1) | WO1999033099A1 (fr) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6620710B1 (en) * | 2000-09-18 | 2003-09-16 | Hewlett-Packard Development Company, L.P. | Forming a single crystal semiconductor film on a non-crystalline surface |
FR2821575B1 (fr) * | 2001-03-02 | 2003-10-24 | Commissariat Energie Atomique | Procede de greffage organique localise sans masque sur des protions conductrices ou semiconductrices de surfaces composites |
US7791066B2 (en) * | 2005-05-20 | 2010-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof and method for writing memory element |
JP5903714B2 (ja) * | 2007-07-26 | 2016-04-13 | ソイテックSoitec | エピタキシャル方法およびこの方法によって成長させられたテンプレート |
WO2022011501A1 (fr) * | 2020-07-13 | 2022-01-20 | 中国科学院宁波材料技术与工程研究所 | Revêtement nano-composite doté d'une structure à arcs multiples imitant une coquille, procédé de préparation correspondant et application associée |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5281283A (en) * | 1987-03-26 | 1994-01-25 | Canon Kabushiki Kaisha | Group III-V compound crystal article using selective epitaxial growth |
JPS63239920A (ja) * | 1987-03-27 | 1988-10-05 | Canon Inc | 半導体素子用基板の製造方法 |
FR2666092B1 (fr) | 1990-08-23 | 1993-12-03 | Commissariat A Energie Atomique | Membranes organiques bidimensionnelles et leurs procedes de preparation. |
US5731598A (en) * | 1995-06-23 | 1998-03-24 | Matsushita Electric Industrial Co. Ltd. | Single electron tunnel device and method for fabricating the same |
EP0788149A1 (fr) * | 1996-02-05 | 1997-08-06 | Hitachi Europe Limited | Méthode pour déposer des particules nanométriques |
CN1097857C (zh) * | 1996-03-26 | 2003-01-01 | 三星电子株式会社 | 隧道效应器件及其制造方法 |
-
1997
- 1997-12-19 FR FR9716158A patent/FR2772984B1/fr not_active Expired - Lifetime
-
1998
- 1998-12-17 US US09/554,277 patent/US6365491B1/en not_active Expired - Lifetime
- 1998-12-17 WO PCT/FR1998/002769 patent/WO1999033099A1/fr active Search and Examination
- 1998-12-17 EP EP98962497A patent/EP1040515A1/fr not_active Withdrawn
- 1998-12-17 JP JP2000525915A patent/JP2001527289A/ja not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
WO1999033099A1 (fr) | 1999-07-01 |
FR2772984A1 (fr) | 1999-06-25 |
JP2001527289A (ja) | 2001-12-25 |
US6365491B1 (en) | 2002-04-02 |
EP1040515A1 (fr) | 2000-10-04 |
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Legal Events
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PLFP | Fee payment |
Year of fee payment: 19 |
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PLFP | Fee payment |
Year of fee payment: 20 |