FR2772984B1 - Procede de formation d'un reseau regulier d'ilots semi-conducteurs sur un substrat isolant - Google Patents

Procede de formation d'un reseau regulier d'ilots semi-conducteurs sur un substrat isolant

Info

Publication number
FR2772984B1
FR2772984B1 FR9716158A FR9716158A FR2772984B1 FR 2772984 B1 FR2772984 B1 FR 2772984B1 FR 9716158 A FR9716158 A FR 9716158A FR 9716158 A FR9716158 A FR 9716158A FR 2772984 B1 FR2772984 B1 FR 2772984B1
Authority
FR
France
Prior art keywords
ilots
semiconductor
forming
insulating substrate
regular network
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR9716158A
Other languages
English (en)
Other versions
FR2772984A1 (fr
Inventor
Francois Martin
Jean Michel Nunzi
Brigitte Mouanda
Serge Palacin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR9716158A priority Critical patent/FR2772984B1/fr
Priority to PCT/FR1998/002769 priority patent/WO1999033099A1/fr
Priority to EP98962497A priority patent/EP1040515A1/fr
Priority to US09/554,277 priority patent/US6365491B1/en
Priority to JP2000525915A priority patent/JP2001527289A/ja
Publication of FR2772984A1 publication Critical patent/FR2772984A1/fr
Application granted granted Critical
Publication of FR2772984B1 publication Critical patent/FR2772984B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H01L21/02645—Seed materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Composite Materials (AREA)
  • Thin Film Transistor (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
FR9716158A 1997-12-19 1997-12-19 Procede de formation d'un reseau regulier d'ilots semi-conducteurs sur un substrat isolant Expired - Lifetime FR2772984B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR9716158A FR2772984B1 (fr) 1997-12-19 1997-12-19 Procede de formation d'un reseau regulier d'ilots semi-conducteurs sur un substrat isolant
PCT/FR1998/002769 WO1999033099A1 (fr) 1997-12-19 1998-12-17 Procede de formation d'un reseau regulier d'ilots semi-conducteurs sur un substrat isolant
EP98962497A EP1040515A1 (fr) 1997-12-19 1998-12-17 Procede de formation d'un reseau regulier d'ilots semi-conducteurs sur un substrat isolant
US09/554,277 US6365491B1 (en) 1997-12-19 1998-12-17 Method for forming a uniform network of semiconductor islands on an insulating substrate
JP2000525915A JP2001527289A (ja) 1997-12-19 1998-12-17 絶縁性基体上に半導体アイランドからなる規則的ネットワークを形成するための方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9716158A FR2772984B1 (fr) 1997-12-19 1997-12-19 Procede de formation d'un reseau regulier d'ilots semi-conducteurs sur un substrat isolant

Publications (2)

Publication Number Publication Date
FR2772984A1 FR2772984A1 (fr) 1999-06-25
FR2772984B1 true FR2772984B1 (fr) 2003-07-25

Family

ID=9514840

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9716158A Expired - Lifetime FR2772984B1 (fr) 1997-12-19 1997-12-19 Procede de formation d'un reseau regulier d'ilots semi-conducteurs sur un substrat isolant

Country Status (5)

Country Link
US (1) US6365491B1 (fr)
EP (1) EP1040515A1 (fr)
JP (1) JP2001527289A (fr)
FR (1) FR2772984B1 (fr)
WO (1) WO1999033099A1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6620710B1 (en) * 2000-09-18 2003-09-16 Hewlett-Packard Development Company, L.P. Forming a single crystal semiconductor film on a non-crystalline surface
FR2821575B1 (fr) * 2001-03-02 2003-10-24 Commissariat Energie Atomique Procede de greffage organique localise sans masque sur des protions conductrices ou semiconductrices de surfaces composites
US7791066B2 (en) * 2005-05-20 2010-09-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof and method for writing memory element
JP5903714B2 (ja) * 2007-07-26 2016-04-13 ソイテックＳｏｉｔｅｃ エピタキシャル方法およびこの方法によって成長させられたテンプレート
WO2022011501A1 (fr) * 2020-07-13 2022-01-20 中国科学院宁波材料技术与工程研究所 Revêtement nano-composite doté d'une structure à arcs multiples imitant une coquille, procédé de préparation correspondant et application associée

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5281283A (en) * 1987-03-26 1994-01-25 Canon Kabushiki Kaisha Group III-V compound crystal article using selective epitaxial growth
JPS63239920A (ja) * 1987-03-27 1988-10-05 Canon Inc 半導体素子用基板の製造方法
FR2666092B1 (fr) 1990-08-23 1993-12-03 Commissariat A Energie Atomique Membranes organiques bidimensionnelles et leurs procedes de preparation.
US5731598A (en) * 1995-06-23 1998-03-24 Matsushita Electric Industrial Co. Ltd. Single electron tunnel device and method for fabricating the same
EP0788149A1 (fr) * 1996-02-05 1997-08-06 Hitachi Europe Limited Méthode pour déposer des particules nanométriques
CN1097857C (zh) * 1996-03-26 2003-01-01 三星电子株式会社 隧道效应器件及其制造方法

Also Published As

Publication number Publication date
WO1999033099A1 (fr) 1999-07-01
FR2772984A1 (fr) 1999-06-25
JP2001527289A (ja) 2001-12-25
US6365491B1 (en) 2002-04-02
EP1040515A1 (fr) 2000-10-04

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