FR2761809B1 - Transistor en couche mince et son procede de fabrication - Google Patents

Transistor en couche mince et son procede de fabrication

Info

Publication number
FR2761809B1
FR2761809B1 FR9802397A FR9802397A FR2761809B1 FR 2761809 B1 FR2761809 B1 FR 2761809B1 FR 9802397 A FR9802397 A FR 9802397A FR 9802397 A FR9802397 A FR 9802397A FR 2761809 B1 FR2761809 B1 FR 2761809B1
Authority
FR
France
Prior art keywords
manufacturing
thin film
film transistor
transistor
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR9802397A
Other languages
English (en)
Other versions
FR2761809A1 (fr
Inventor
Hyun Sik Seo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Electronics Inc
Original Assignee
LG Electronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1019970007010A external-priority patent/KR100248123B1/ko
Priority claimed from KR1019970040896A external-priority patent/KR100392909B1/ko
Application filed by LG Electronics Inc filed Critical LG Electronics Inc
Publication of FR2761809A1 publication Critical patent/FR2761809A1/fr
Application granted granted Critical
Publication of FR2761809B1 publication Critical patent/FR2761809B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
FR9802397A 1997-03-04 1998-02-27 Transistor en couche mince et son procede de fabrication Expired - Lifetime FR2761809B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019970007010A KR100248123B1 (ko) 1997-03-04 1997-03-04 박막트랜지스터및그의제조방법
KR1019970040896A KR100392909B1 (ko) 1997-08-26 1997-08-26 박막트랜지스터및그의제조방법

Publications (2)

Publication Number Publication Date
FR2761809A1 FR2761809A1 (fr) 1998-10-09
FR2761809B1 true FR2761809B1 (fr) 2002-03-01

Family

ID=26632552

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9802397A Expired - Lifetime FR2761809B1 (fr) 1997-03-04 1998-02-27 Transistor en couche mince et son procede de fabrication

Country Status (1)

Country Link
FR (1) FR2761809B1 (fr)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1992006497A1 (fr) * 1990-10-05 1992-04-16 General Electric Company Reglage du chevauchement entre l'electrode de grille et les electrodes de source/drain dans un transistor a couches minces auto-aligne via une configuration d'electrode de porte a languette d'ajustement
JPH05315615A (ja) * 1992-05-08 1993-11-26 Nippon Steel Corp 薄膜トランジスタ
JP3149040B2 (ja) * 1992-06-04 2001-03-26 富士通株式会社 薄膜トランジスタ・マトリクス及びその製造方法
JPH06104241A (ja) * 1992-09-18 1994-04-15 Fujitsu Ltd アルミニウム電極のパターニング方法
JPH08254680A (ja) * 1995-03-17 1996-10-01 Toshiba Corp 半導体装置およびその製造方法

Also Published As

Publication number Publication date
FR2761809A1 (fr) 1998-10-09

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