FR2745421B1 - Mesfet du type enrichissement - Google Patents

Mesfet du type enrichissement

Info

Publication number
FR2745421B1
FR2745421B1 FR9610436A FR9610436A FR2745421B1 FR 2745421 B1 FR2745421 B1 FR 2745421B1 FR 9610436 A FR9610436 A FR 9610436A FR 9610436 A FR9610436 A FR 9610436A FR 2745421 B1 FR2745421 B1 FR 2745421B1
Authority
FR
France
Prior art keywords
type mesfet
enrichment type
enrichment
mesfet
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9610436A
Other languages
English (en)
Other versions
FR2745421A1 (fr
Inventor
Masaki Nagahara
Yasunori Tateno
Masahiko Takikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of FR2745421A1 publication Critical patent/FR2745421A1/fr
Application granted granted Critical
Publication of FR2745421B1 publication Critical patent/FR2745421B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H01L29/475—Schottky barrier electrodes on AIII-BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/802—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with heterojunction gate, e.g. transistors with semiconductor layer acting as gate insulating layer, MIS-like transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
FR9610436A 1996-02-27 1996-08-26 Mesfet du type enrichissement Expired - Fee Related FR2745421B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP04016096A JP3616447B2 (ja) 1996-02-27 1996-02-27 半導体装置

Publications (2)

Publication Number Publication Date
FR2745421A1 FR2745421A1 (fr) 1997-08-29
FR2745421B1 true FR2745421B1 (fr) 1999-05-28

Family

ID=12573018

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9610436A Expired - Fee Related FR2745421B1 (fr) 1996-02-27 1996-08-26 Mesfet du type enrichissement

Country Status (4)

Country Link
US (1) US5949095A (fr)
JP (1) JP3616447B2 (fr)
KR (1) KR100250793B1 (fr)
FR (1) FR2745421B1 (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3141841B2 (ja) * 1998-05-28 2001-03-07 日本電気株式会社 ヘテロ接合電界効果トランジスタ
JP3416532B2 (ja) * 1998-06-15 2003-06-16 富士通カンタムデバイス株式会社 化合物半導体装置及びその製造方法
US6087207A (en) * 1998-09-29 2000-07-11 Raytheon Company Method of making pseudomorphic high electron mobility transistors
JP3707766B2 (ja) 1999-09-09 2005-10-19 株式会社村田製作所 電界効果型半導体装置
US6528405B1 (en) * 2000-02-18 2003-03-04 Motorola, Inc. Enhancement mode RF device and fabrication method
US6452221B1 (en) * 2000-09-21 2002-09-17 Trw Inc. Enhancement mode device
WO2003050849A2 (fr) * 2001-12-06 2003-06-19 Hrl Laboratories, Llc Transistor a effet de champ et a heterojonction gan pour hyperfrequences a faible bruit et haute puissance
US6893947B2 (en) * 2002-06-25 2005-05-17 Freescale Semiconductor, Inc. Advanced RF enhancement-mode FETs with improved gate properties
US7812369B2 (en) * 2003-09-09 2010-10-12 The Regents Of The University Of California Fabrication of single or multiple gate field plates
JP2006173571A (ja) 2004-12-14 2006-06-29 Korea Electronics Telecommun 半導体素子のトランジスタ及びその製造方法
JP2006202862A (ja) * 2005-01-19 2006-08-03 Sony Corp ヘテロ接合半導体装置及びその製造方法
JP2008235347A (ja) * 2007-03-16 2008-10-02 Sharp Corp リセスゲート型ｈｆｅｔの製造方法
US8129749B2 (en) * 2008-03-28 2012-03-06 Intel Corporation Double quantum well structures for transistors
US9530708B1 (en) 2013-05-31 2016-12-27 Hrl Laboratories, Llc Flexible electronic circuit and method for manufacturing same
KR102456957B1 (ko) 2019-05-17 2022-10-21 한국전자통신연구원 전계효과 트랜지스터

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58143577A (ja) * 1982-02-22 1983-08-26 Toshiba Corp 埋め込みゲ−ト電界効果トランジスタの製造方法
JPS59168677A (ja) * 1983-03-14 1984-09-22 Fujitsu Ltd 半導体装置及びその製造方法
US4641161A (en) * 1984-09-28 1987-02-03 Texas Instruments Incorporated Heterojunction device
US4888626A (en) * 1985-03-07 1989-12-19 The United States Of America As Represented By The Secretary Of The Navy Self-aligned gaas fet with low 1/f noise
US4656076A (en) * 1985-04-26 1987-04-07 Triquint Semiconductors, Inc. Self-aligned recessed gate process
US5411914A (en) * 1988-02-19 1995-05-02 Massachusetts Institute Of Technology III-V based integrated circuits having low temperature growth buffer or passivation layers
JPH01268071A (ja) * 1988-04-20 1989-10-25 Hitachi Ltd 化合物半導体素子
US5043777A (en) * 1989-04-03 1991-08-27 Westinghouse Electric Corp. Power FETS with improved high voltage performance
JP2518397B2 (ja) * 1989-06-02 1996-07-24 三菱電機株式会社 電界効果トランジスタ
JPH05206171A (ja) * 1992-01-27 1993-08-13 Sumitomo Electric Ind Ltd 半導体装置及びその製造方法
JP3294411B2 (ja) * 1993-12-28 2002-06-24 富士通株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
JP3616447B2 (ja) 2005-02-02
KR970063789A (ko) 1997-09-12
KR100250793B1 (ko) 2000-04-01
JPH09232336A (ja) 1997-09-05
FR2745421A1 (fr) 1997-08-29
US5949095A (en) 1999-09-07

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20140430