FR2705165B1 - Installation de traitement par plasma et procédé pour son exploitation. - Google Patents

Installation de traitement par plasma et procédé pour son exploitation.

Info

Publication number
FR2705165B1
FR2705165B1 FR9405315A FR9405315A FR2705165B1 FR 2705165 B1 FR2705165 B1 FR 2705165B1 FR 9405315 A FR9405315 A FR 9405315A FR 9405315 A FR9405315 A FR 9405315A FR 2705165 B1 FR2705165 B1 FR 2705165B1
Authority
FR
France
Prior art keywords
plasma treatment
treatment installation
installation
plasma
treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR9405315A
Other languages
English (en)
Other versions
FR2705165A1 (fr
Inventor
Emmanuel Turlot
Thierry Emeraud
Jacques Schmitt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OC Oerlikon Balzers AG
Original Assignee
Balzers AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Balzers AG filed Critical Balzers AG
Publication of FR2705165A1 publication Critical patent/FR2705165A1/fr
Application granted granted Critical
Publication of FR2705165B1 publication Critical patent/FR2705165B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67754—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a batch of workpieces
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32743—Means for moving the material to be treated for introducing the material into processing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/137—Associated with semiconductor wafer handling including means for charging or discharging wafer cassette
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/139—Associated with semiconductor wafer handling including wafer charging or discharging means for vacuum chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
FR9405315A 1993-05-03 1994-05-02 Installation de traitement par plasma et procédé pour son exploitation. Expired - Lifetime FR2705165B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH01343/93A CH687986A5 (de) 1993-05-03 1993-05-03 Plasmabehandlungsanlage und Verfahren zu deren Betrieb.

Publications (2)

Publication Number Publication Date
FR2705165A1 FR2705165A1 (fr) 1994-11-18
FR2705165B1 true FR2705165B1 (fr) 1997-04-30

Family

ID=4208266

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9405315A Expired - Lifetime FR2705165B1 (fr) 1993-05-03 1994-05-02 Installation de traitement par plasma et procédé pour son exploitation.

Country Status (5)

Country Link
US (1) US5515986A (fr)
JP (2) JP3609448B2 (fr)
CH (1) CH687986A5 (fr)
DE (1) DE4412915B4 (fr)
FR (1) FR2705165B1 (fr)

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CH687987A5 (de) * 1993-05-03 1997-04-15 Balzers Hochvakuum Verfahren zur Erhoehung der Beschichtungsrate in einem Plasmaentladungsraum und Plasmakammer.
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EP0865663A1 (fr) * 1995-12-08 1998-09-23 Balzers Aktiengesellschaft Chambre de traitement a plasma hf ou chambre de revetement pecvd, leurs utilisations et procede de revetement de cd
US5789851A (en) * 1995-12-15 1998-08-04 Balzers Aktiengesellschaft Field emission device
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US6176667B1 (en) * 1996-04-30 2001-01-23 Applied Materials, Inc. Multideck wafer processing system
KR100581420B1 (ko) * 1996-06-13 2006-08-30 브룩스 오토메이션 인코퍼레이티드 다층기판처리장치
US6062798A (en) * 1996-06-13 2000-05-16 Brooks Automation, Inc. Multi-level substrate processing apparatus
KR100269097B1 (ko) * 1996-08-05 2000-12-01 엔도 마코토 기판처리장치
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US6972071B1 (en) 1999-07-13 2005-12-06 Nordson Corporation High-speed symmetrical plasma treatment system
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US6709522B1 (en) 2000-07-11 2004-03-23 Nordson Corporation Material handling system and methods for a multichamber plasma treatment system
JP2002030447A (ja) * 2000-07-11 2002-01-31 Canon Inc プラズマ処理方法及びプラズマ処理装置
US6841033B2 (en) * 2001-03-21 2005-01-11 Nordson Corporation Material handling system and method for a multi-workpiece plasma treatment system
US20030062064A1 (en) * 2001-09-28 2003-04-03 Infineon Technologies North America Corp. Method of removing PECVD residues of fluorinated plasma using in-situ H2 plasma
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JP4584722B2 (ja) * 2005-01-13 2010-11-24 シャープ株式会社 プラズマ処理装置および同装置により製造された半導体素子
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JP2010520634A (ja) * 2007-03-08 2010-06-10 ソスル カンパニー， リミテッド 昇降装置を用いる基板処理装置及び方法
CN102086514B (zh) * 2009-12-03 2013-07-17 北京北方微电子基地设备工艺研究中心有限责任公司 一种pecvd系统
US20130216731A1 (en) * 2010-09-03 2013-08-22 Tel Solar Ag Control of differential pressure in pecvd systems
CN102277562B (zh) * 2011-08-15 2013-05-08 深圳市创益科技发展有限公司 薄膜太阳能电池多级pecvd沉积设备
US20130333616A1 (en) * 2012-06-18 2013-12-19 Tel Solar Ag Plasma processing system with movable chamber housing parts
CN103510079B (zh) * 2012-06-21 2015-12-16 理想能源设备(上海)有限公司 一种真空处理系统阀门组件和化学气相沉积系统
US9506292B2 (en) 2012-09-18 2016-11-29 Rom Acquisition Corporation Door mounted ladder for cargo vans
CN103276369B (zh) * 2013-05-06 2016-02-17 南方科技大学 一种pecvd镀膜系统
JP6209043B2 (ja) * 2013-09-30 2017-10-04 東京エレクトロン株式会社 ゲートバルブおよび基板処理装置
JP2016066684A (ja) * 2014-09-24 2016-04-28 東京エレクトロン株式会社 ゲートバルブ及び基板処理システム
JP2019052339A (ja) * 2017-09-13 2019-04-04 東京エレクトロン株式会社 排気管のクリーニング方法
KR102554014B1 (ko) * 2018-06-15 2023-07-11 삼성전자주식회사 저온 식각 방법 및 플라즈마 식각 장치
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FR3104174B1 (fr) * 2019-12-06 2022-04-01 Commissariat Energie Atomique Nacelle pour dispositif de depot chimique en phase vapeur assiste par plasma a nettoyage facilite
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Also Published As

Publication number Publication date
CH687986A5 (de) 1997-04-15
DE4412915B4 (de) 2005-12-15
JP3609448B2 (ja) 2005-01-12
JP4057568B2 (ja) 2008-03-05
US5515986A (en) 1996-05-14
DE4412915A1 (de) 1994-11-10
JPH0711447A (ja) 1995-01-13
FR2705165A1 (fr) 1994-11-18
JP2005051250A (ja) 2005-02-24

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