FR2691834B1 - Procede pour produire et pour amorcer une decharge basse tension, installation de traitement sous vide et chambre a cathode pour celle-ci, et utilisations du procede. - Google Patents
Procede pour produire et pour amorcer une decharge basse tension, installation de traitement sous vide et chambre a cathode pour celle-ci, et utilisations du procede.Info
- Publication number
- FR2691834B1 FR2691834B1 FR9305689A FR9305689A FR2691834B1 FR 2691834 B1 FR2691834 B1 FR 2691834B1 FR 9305689 A FR9305689 A FR 9305689A FR 9305689 A FR9305689 A FR 9305689A FR 2691834 B1 FR2691834 B1 FR 2691834B1
- Authority
- FR
- France
- Prior art keywords
- producing
- low voltage
- vacuum processing
- cathode chamber
- processing plant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- ing And Chemical Polishing (AREA)
- Electron Sources, Ion Sources (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH01696/92A CH687111A5 (de) | 1992-05-26 | 1992-05-26 | Verfahren zum Erzeugen einer Niederspannungsentladung, Vakuumbehandlungsanlage hierfuer sowie Anwendung des Verfahrens. |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2691834A1 FR2691834A1 (fr) | 1993-12-03 |
FR2691834B1 true FR2691834B1 (fr) | 1995-12-08 |
Family
ID=4216464
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9305689A Expired - Lifetime FR2691834B1 (fr) | 1992-05-26 | 1993-05-12 | Procede pour produire et pour amorcer une decharge basse tension, installation de traitement sous vide et chambre a cathode pour celle-ci, et utilisations du procede. |
Country Status (7)
Country | Link |
---|---|
US (1) | US5384018A (fr) |
JP (1) | JP3158158B2 (fr) |
KR (1) | KR100299158B1 (fr) |
CH (1) | CH687111A5 (fr) |
DE (2) | DE4345602B4 (fr) |
FR (1) | FR2691834B1 (fr) |
GB (1) | GB2267387B (fr) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5662770A (en) * | 1993-04-16 | 1997-09-02 | Micron Technology, Inc. | Method and apparatus for improving etch uniformity in remote source plasma reactors with powered wafer chucks |
DE4437269C1 (de) * | 1994-10-18 | 1996-02-22 | Balzers Hochvakuum | Verfahren zum Reinigen einer Werkstückoberfläche und seine Verwendung |
CH692446A5 (de) * | 1996-04-15 | 2002-06-28 | Esec Sa | Verfahren zur Herstellung von Werkstücken und von Teilen hierfür |
DE19705884A1 (de) * | 1997-02-15 | 1998-08-20 | Leybold Ag | Plasma-Zündvorrichtung |
JP2868120B2 (ja) * | 1997-06-11 | 1999-03-10 | 川崎重工業株式会社 | 電子ビーム励起プラズマ発生装置 |
JP4906169B2 (ja) * | 1997-06-13 | 2012-03-28 | エリコン・トレーディング・アクチェンゲゼルシャフト,トリュープバッハ | 被覆工作物を製造するための方法、その方法の利用およびそのための装置 |
DE19725930C2 (de) * | 1997-06-16 | 2002-07-18 | Eberhard Moll Gmbh Dr | Verfahren und Anlage zum Behandeln von Substraten mittels Ionen aus einer Niedervoltbogenentladung |
US6368678B1 (en) * | 1998-05-13 | 2002-04-09 | Terry Bluck | Plasma processing system and method |
TW455912B (en) | 1999-01-22 | 2001-09-21 | Sony Corp | Method and apparatus for film deposition |
US6605175B1 (en) * | 1999-02-19 | 2003-08-12 | Unaxis Balzers Aktiengesellschaft | Process for manufacturing component parts, use of same, with air bearing supported workpieces and vacuum processing chamber |
US6365016B1 (en) * | 1999-03-17 | 2002-04-02 | General Electric Company | Method and apparatus for arc plasma deposition with evaporation of reagents |
US6426125B1 (en) * | 1999-03-17 | 2002-07-30 | General Electric Company | Multilayer article and method of making by ARC plasma deposition |
TW512181B (en) * | 2000-02-03 | 2002-12-01 | Cosmos Vacuum Technology Corp | A process for covering a film on the surface of the micro cutting router by coating super micro atomized multi-elements |
DE10058768C2 (de) * | 2000-11-27 | 2003-08-21 | Singulus Technologies Ag | Verfahren zum Zünden eines Plasmas |
US7033679B2 (en) * | 2001-01-25 | 2006-04-25 | Kyocera Optec Co., Ltd. | Metal film and metal film-coated member, metal oxide film and metal oxide film-coated member, thin film forming apparatus and thin film forming method for producing metal film and metal oxide film |
US20020160620A1 (en) * | 2001-02-26 | 2002-10-31 | Rudolf Wagner | Method for producing coated workpieces, uses and installation for the method |
DE10224991A1 (de) * | 2002-06-05 | 2004-01-08 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren und Einrichtung zur Reduzierung der Zündspannung von Plasmen |
US6902774B2 (en) | 2002-07-25 | 2005-06-07 | Inficon Gmbh | Method of manufacturing a device |
JP2004119430A (ja) * | 2002-09-24 | 2004-04-15 | Tadatomo Suga | 接合装置および方法 |
ES2380699T3 (es) * | 2004-06-08 | 2012-05-17 | Dichroic Cell S.R.L. | Sistema para la deposición química en fase de vapor asistida por plasma de baja energía |
EP2039799A4 (fr) * | 2006-04-18 | 2015-09-30 | Ulvac Inc | Appareil de formation de film et procede de fabrication d'un film barriere |
US20080029197A1 (en) * | 2006-07-04 | 2008-02-07 | Matsushita Electric Industrial Co., Ltd. | Surface treating apparatus using atomic hydrogen |
DE102011112759A1 (de) | 2011-09-08 | 2013-03-14 | Oerlikon Trading Ag, Trübbach | Plasmaquelle |
DE102012024340A1 (de) * | 2012-12-13 | 2014-06-18 | Oerlikon Trading Ag, Trübbach | Plasmaquelle |
GB201420935D0 (en) | 2014-11-25 | 2015-01-07 | Spts Technologies Ltd | Plasma etching apparatus |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1502647A (fr) * | 1965-12-17 | 1968-02-07 | ||
CH551497A (de) * | 1971-10-06 | 1974-07-15 | Balzers Patent Beteilig Ag | Anordnung zur zerstaeubung von stoffen mittels einer elektrischen niederspannungsentladung. |
DE2241229C2 (de) * | 1972-08-22 | 1983-01-20 | Leybold-Heraeus GmbH, 5000 Köln | Vorrichtung zum Ätzen von Substraten durch eine Glimmentladung |
GB1454196A (en) * | 1974-07-04 | 1976-10-27 | Sokolov B G | Electron beam apparatus |
GB1550853A (en) * | 1975-10-06 | 1979-08-22 | Hitachi Ltd | Apparatus and process for plasma treatment |
CH631743A5 (de) * | 1977-06-01 | 1982-08-31 | Balzers Hochvakuum | Verfahren zum aufdampfen von material in einer vakuumaufdampfanlage. |
CH640886A5 (de) * | 1979-08-02 | 1984-01-31 | Balzers Hochvakuum | Verfahren zum aufbringen harter verschleissfester ueberzuege auf unterlagen. |
CH645137A5 (de) * | 1981-03-13 | 1984-09-14 | Balzers Hochvakuum | Verfahren und vorrichtung zum verdampfen von material unter vakuum. |
GB2101638B (en) * | 1981-07-16 | 1985-07-24 | Ampex | Moveable cathodes/targets for high rate sputtering system |
US4362611A (en) * | 1981-07-27 | 1982-12-07 | International Business Machines Corporation | Quadrupole R.F. sputtering system having an anode/cathode shield and a floating target shield |
CH658545A5 (de) * | 1982-09-10 | 1986-11-14 | Balzers Hochvakuum | Verfahren zum gleichmaessigen erwaermen von heizgut in einem vakuumrezipienten. |
US5096558A (en) * | 1984-04-12 | 1992-03-17 | Plasco Dr. Ehrich Plasma - Coating Gmbh | Method and apparatus for evaporating material in vacuum |
CH664768A5 (de) * | 1985-06-20 | 1988-03-31 | Balzers Hochvakuum | Verfahren zur beschichtung von substraten in einer vakuumkammer. |
DE3614398A1 (de) * | 1985-07-01 | 1987-01-08 | Balzers Hochvakuum | Anordnung zum behandeln von werkstuecken mit einer evakuierbaren kammer |
DE3615361C2 (de) * | 1986-05-06 | 1994-09-01 | Santos Pereira Ribeiro Car Dos | Vorrichtung zur Oberflächenbehandlung von Werkstücken |
ES2022946T5 (es) * | 1987-08-26 | 1996-04-16 | Balzers Hochvakuum | Procedimiento para la aportacion de capas sobre sustratos. |
GB2230644B (en) * | 1989-02-16 | 1994-03-23 | Tokyo Electron Ltd | Electron beam excitation ion source |
CH680369A5 (fr) * | 1989-11-22 | 1992-08-14 | Balzers Hochvakuum | |
DE4020158C2 (de) * | 1990-06-25 | 1998-10-08 | Leybold Ag | Vorrichtung zum Beschichten von Substraten |
DE4029268C2 (de) * | 1990-09-14 | 1995-07-06 | Balzers Hochvakuum | Verfahren zur gleichspannungs-bogenentladungs-unterstützten, reaktiven Behandlung von Gut und Vakuumbehandlungsanlage zur Durchführung |
DE4035131C2 (de) * | 1990-11-05 | 1995-09-21 | Balzers Hochvakuum | Verfahren und Vorrichtung zum gleichmäßigen Erwärmen von Heizgut, insbes. von zu beschichtenden Substraten, in einer Vakuumkammer |
US5250779A (en) * | 1990-11-05 | 1993-10-05 | Balzers Aktiengesellschaft | Method and apparatus for heating-up a substrate by means of a low voltage arc discharge and variable magnetic field |
DE4109619C1 (fr) * | 1991-03-23 | 1992-08-06 | Leybold Ag, 6450 Hanau, De | |
DE4210284A1 (de) * | 1992-03-28 | 1993-09-30 | Leybold Ag | Vorrichtung zum Erzeugen eines Plasmas mittels Kathodenzerstäubung und Mikrowelleneinstrahlung |
DE202004006140U1 (de) * | 2004-04-15 | 2004-06-09 | Tilo Gmbh | Paneele für Zweischichtparkett |
-
1992
- 1992-05-26 CH CH01696/92A patent/CH687111A5/de not_active IP Right Cessation
-
1993
- 1993-04-02 DE DE4345602A patent/DE4345602B4/de not_active Expired - Lifetime
- 1993-04-02 DE DE4310941A patent/DE4310941B4/de not_active Expired - Lifetime
- 1993-05-11 US US08/060,365 patent/US5384018A/en not_active Expired - Lifetime
- 1993-05-12 FR FR9305689A patent/FR2691834B1/fr not_active Expired - Lifetime
- 1993-05-19 GB GB9310269A patent/GB2267387B/en not_active Expired - Lifetime
- 1993-05-20 JP JP11843593A patent/JP3158158B2/ja not_active Expired - Fee Related
- 1993-05-20 KR KR1019930008689A patent/KR100299158B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
FR2691834A1 (fr) | 1993-12-03 |
JP3158158B2 (ja) | 2001-04-23 |
DE4345602B4 (de) | 2010-11-25 |
US5384018A (en) | 1995-01-24 |
KR930024049A (ko) | 1993-12-21 |
CH687111A5 (de) | 1996-09-13 |
GB2267387A (en) | 1993-12-01 |
DE4310941A1 (de) | 1993-12-02 |
KR100299158B1 (ko) | 2001-10-22 |
GB9310269D0 (en) | 1993-06-30 |
DE4310941B4 (de) | 2005-12-01 |
GB2267387B (en) | 1996-08-21 |
JPH0676773A (ja) | 1994-03-18 |
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