FR2686737A1 - Composant de protection semiconducteur auto-protege. - Google Patents

Composant de protection semiconducteur auto-protege. Download PDF

Info

Publication number
FR2686737A1
FR2686737A1 FR9201245A FR9201245A FR2686737A1 FR 2686737 A1 FR2686737 A1 FR 2686737A1 FR 9201245 A FR9201245 A FR 9201245A FR 9201245 A FR9201245 A FR 9201245A FR 2686737 A1 FR2686737 A1 FR 2686737A1
Authority
FR
France
Prior art keywords
region
fuse
protection component
electrode
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR9201245A
Other languages
English (en)
French (fr)
Inventor
Pezzani Robert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
SGS Thomson Microelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SA filed Critical SGS Thomson Microelectronics SA
Priority to FR9201245A priority Critical patent/FR2686737A1/fr
Priority to EP93420036A priority patent/EP0554195B1/fr
Priority to DE69308910T priority patent/DE69308910T2/de
Priority to JP5012359A priority patent/JPH065708A/ja
Publication of FR2686737A1 publication Critical patent/FR2686737A1/fr
Priority to US08/384,632 priority patent/US5627711A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/62—Protection against overvoltage, e.g. fuses, shunts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/13033—TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Fuses (AREA)
  • Thyristors (AREA)
FR9201245A 1992-01-29 1992-01-29 Composant de protection semiconducteur auto-protege. Withdrawn FR2686737A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR9201245A FR2686737A1 (fr) 1992-01-29 1992-01-29 Composant de protection semiconducteur auto-protege.
EP93420036A EP0554195B1 (fr) 1992-01-29 1993-01-25 Composant de protection semiconducteur auto-protégé
DE69308910T DE69308910T2 (de) 1992-01-29 1993-01-25 Selbsttätig geschütztes Halbleiterschutzelement
JP5012359A JPH065708A (ja) 1992-01-29 1993-01-28 モノリシック半導体保護構成要素
US08/384,632 US5627711A (en) 1992-01-29 1995-02-06 Self-protected semiconductor protection component

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9201245A FR2686737A1 (fr) 1992-01-29 1992-01-29 Composant de protection semiconducteur auto-protege.

Publications (1)

Publication Number Publication Date
FR2686737A1 true FR2686737A1 (fr) 1993-07-30

Family

ID=9426323

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9201245A Withdrawn FR2686737A1 (fr) 1992-01-29 1992-01-29 Composant de protection semiconducteur auto-protege.

Country Status (5)

Country Link
US (1) US5627711A (ja)
EP (1) EP0554195B1 (ja)
JP (1) JPH065708A (ja)
DE (1) DE69308910T2 (ja)
FR (1) FR2686737A1 (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4435255A1 (de) * 1994-10-01 1996-04-04 Abb Management Ag Verfahren zur Fehlerbehebung in einer Stromrichterschaltungsanordnung
KR100249162B1 (ko) * 1996-12-31 2000-03-15 김영환 정전기(eds)보호회로
DE19752196C1 (de) * 1997-11-25 1999-02-11 Siemens Ag Halbleiterbauelement mit definiertem Verhalten bei einem Ausfall und Verfahren zur Herstellung eines solchen
US6252292B1 (en) 1999-06-09 2001-06-26 International Business Machines Corporation Vertical electrical cavity-fuse
US6501634B1 (en) 1999-06-17 2002-12-31 Douglas P. Hubbell High voltage transient voltage surge suppression fuse link system
DE102006011139A1 (de) * 2006-03-10 2007-09-13 Conti Temic Microelectronic Gmbh Verfahren zur Beseitigung von Fehlerzuständen bei elektrischen Antrieben
US20110143966A1 (en) * 2009-12-15 2011-06-16 Affymetrix, Inc. Surface Modifications and Methods for their Synthesis and Use

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1987001867A1 (en) * 1985-09-11 1987-03-26 Robert Bosch Gmbh Multi-cell transistor
EP0318404A1 (fr) * 1987-11-24 1989-05-31 STMicroelectronics S.A. Assemblage monolithique de diodes de protection et systèmes de protection
EP0349890A2 (en) * 1988-07-06 1990-01-10 National Semiconductor Corporation ESD low resistance input structure
US4908692A (en) * 1986-06-20 1990-03-13 Kabushiki Kaisha Toshiba Fuse-containing semiconductor device
EP0364981A2 (en) * 1988-10-20 1990-04-25 Rohm Co., Ltd. Overcurrent preventive diode
JPH02253651A (ja) * 1989-03-28 1990-10-12 Nec Corp 半導体集積回路の入力保護回路

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH679839A5 (ja) * 1988-07-01 1992-04-30 Aspa Zuerich Ag

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1987001867A1 (en) * 1985-09-11 1987-03-26 Robert Bosch Gmbh Multi-cell transistor
US4908692A (en) * 1986-06-20 1990-03-13 Kabushiki Kaisha Toshiba Fuse-containing semiconductor device
EP0318404A1 (fr) * 1987-11-24 1989-05-31 STMicroelectronics S.A. Assemblage monolithique de diodes de protection et systèmes de protection
EP0349890A2 (en) * 1988-07-06 1990-01-10 National Semiconductor Corporation ESD low resistance input structure
EP0364981A2 (en) * 1988-10-20 1990-04-25 Rohm Co., Ltd. Overcurrent preventive diode
JPH02253651A (ja) * 1989-03-28 1990-10-12 Nec Corp 半導体集積回路の入力保護回路

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
IEEE JOURNAL OF SOLID-STATE CIRCUITS vol. SC-8, no. 6, Décembre 1973, pages 419 - 427 W. F. DAVIS 'BIPOLAR DESIGN CONSIDERATIONS FOR THE AUTOMOTIVE ENVIRONMENT' *
PATENT ABSTRACTS OF JAPAN vol. 14, no. 580 (E-1017)25 Décembre 1990 & JP-A-02 253 651 ( NEC ) 12 Octobre 1990 *

Also Published As

Publication number Publication date
DE69308910D1 (de) 1997-04-24
JPH065708A (ja) 1994-01-14
DE69308910T2 (de) 1997-07-10
EP0554195A1 (fr) 1993-08-04
EP0554195B1 (fr) 1997-03-19
US5627711A (en) 1997-05-06

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Legal Events

Date Code Title Description
ST Notification of lapse