FR2678109B1 - Disposition des lignes de source de tension et de masse d'un dispositif de memoire a semiconducteur. - Google Patents

Disposition des lignes de source de tension et de masse d'un dispositif de memoire a semiconducteur.

Info

Publication number
FR2678109B1
FR2678109B1 FR9207335A FR9207335A FR2678109B1 FR 2678109 B1 FR2678109 B1 FR 2678109B1 FR 9207335 A FR9207335 A FR 9207335A FR 9207335 A FR9207335 A FR 9207335A FR 2678109 B1 FR2678109 B1 FR 2678109B1
Authority
FR
France
Prior art keywords
voltage
arrangement
memory device
semiconductor memory
source lines
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9207335A
Other languages
English (en)
French (fr)
Other versions
FR2678109A1 (fr
Inventor
Young-Ho Seo
Hyoung-Kyu Yim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of FR2678109A1 publication Critical patent/FR2678109A1/fr
Application granted granted Critical
Publication of FR2678109B1 publication Critical patent/FR2678109B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • H10W72/00—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices
    • H10W20/427—

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
FR9207335A 1991-06-19 1992-06-17 Disposition des lignes de source de tension et de masse d'un dispositif de memoire a semiconducteur. Expired - Fee Related FR2678109B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910010194A KR930001392A (ko) 1991-06-19 1991-06-19 반도체 메모리 장치의 전원 접지선 배선방법

Publications (2)

Publication Number Publication Date
FR2678109A1 FR2678109A1 (fr) 1992-12-24
FR2678109B1 true FR2678109B1 (fr) 1994-01-21

Family

ID=19316015

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9207335A Expired - Fee Related FR2678109B1 (fr) 1991-06-19 1992-06-17 Disposition des lignes de source de tension et de masse d'un dispositif de memoire a semiconducteur.

Country Status (7)

Country Link
JP (1) JPH0719851B2 (cg-RX-API-DMAC10.html)
KR (1) KR930001392A (cg-RX-API-DMAC10.html)
DE (1) DE4219927A1 (cg-RX-API-DMAC10.html)
FR (1) FR2678109B1 (cg-RX-API-DMAC10.html)
GB (1) GB2256968A (cg-RX-API-DMAC10.html)
IT (1) IT1258990B (cg-RX-API-DMAC10.html)
TW (1) TW245835B (cg-RX-API-DMAC10.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100249166B1 (ko) * 1997-03-07 2000-03-15 김영환 이에스디(esd) 보호회로 및 그 제조방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5780828A (en) * 1980-11-07 1982-05-20 Hitachi Ltd Semiconductor integrated circuit device
JPS5922357A (ja) * 1982-07-28 1984-02-04 Toshiba Corp Ｃｍｏｓ形半導体集積回路
JPH0693497B2 (ja) * 1986-07-30 1994-11-16 日本電気株式会社 相補型ｍｉｓ集積回路
GB2199695B (en) * 1987-01-06 1990-07-25 Samsung Semiconductor Inc Dynamic random access memory with selective well biasing
DE3855356T2 (de) * 1987-03-18 1997-01-30 Nippon Electric Co Vorrichtung mit complementäre integrierte Schaltung mit Mitteln zur Verhinderung einer parasitären Auslösung

Also Published As

Publication number Publication date
KR930001392A (ko) 1993-01-16
IT1258990B (it) 1996-03-11
DE4219927A1 (de) 1992-12-24
ITMI921460A1 (it) 1993-12-12
GB2256968A (en) 1992-12-23
JPH06112435A (ja) 1994-04-22
FR2678109A1 (fr) 1992-12-24
GB9212830D0 (en) 1992-07-29
TW245835B (cg-RX-API-DMAC10.html) 1995-04-21
ITMI921460A0 (it) 1992-06-12
JPH0719851B2 (ja) 1995-03-06

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Legal Events

Date Code Title Description
ST Notification of lapse