IT1258990B - Dispositivo di memoria a semiconduttore con linee di alimentazione e di massa del terminale di ingresso isolate da quelle del terminale di uscita - Google Patents

Dispositivo di memoria a semiconduttore con linee di alimentazione e di massa del terminale di ingresso isolate da quelle del terminale di uscita

Info

Publication number
IT1258990B
IT1258990B ITMI921460A ITMI921460A IT1258990B IT 1258990 B IT1258990 B IT 1258990B IT MI921460 A ITMI921460 A IT MI921460A IT MI921460 A ITMI921460 A IT MI921460A IT 1258990 B IT1258990 B IT 1258990B
Authority
IT
Italy
Prior art keywords
power
memory device
semiconductor memory
output terminal
input terminal
Prior art date
Application number
ITMI921460A
Other languages
English (en)
Italian (it)
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of ITMI921460A0 publication Critical patent/ITMI921460A0/it
Publication of ITMI921460A1 publication Critical patent/ITMI921460A1/it
Application granted granted Critical
Publication of IT1258990B publication Critical patent/IT1258990B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • H10W72/00—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices
    • H10W20/427—

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
ITMI921460A 1991-06-19 1992-06-12 Dispositivo di memoria a semiconduttore con linee di alimentazione e di massa del terminale di ingresso isolate da quelle del terminale di uscita IT1258990B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910010194A KR930001392A (ko) 1991-06-19 1991-06-19 반도체 메모리 장치의 전원 접지선 배선방법

Publications (3)

Publication Number Publication Date
ITMI921460A0 ITMI921460A0 (it) 1992-06-12
ITMI921460A1 ITMI921460A1 (it) 1993-12-12
IT1258990B true IT1258990B (it) 1996-03-11

Family

ID=19316015

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI921460A IT1258990B (it) 1991-06-19 1992-06-12 Dispositivo di memoria a semiconduttore con linee di alimentazione e di massa del terminale di ingresso isolate da quelle del terminale di uscita

Country Status (7)

Country Link
JP (1) JPH0719851B2 (cg-RX-API-DMAC10.html)
KR (1) KR930001392A (cg-RX-API-DMAC10.html)
DE (1) DE4219927A1 (cg-RX-API-DMAC10.html)
FR (1) FR2678109B1 (cg-RX-API-DMAC10.html)
GB (1) GB2256968A (cg-RX-API-DMAC10.html)
IT (1) IT1258990B (cg-RX-API-DMAC10.html)
TW (1) TW245835B (cg-RX-API-DMAC10.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100249166B1 (ko) * 1997-03-07 2000-03-15 김영환 이에스디(esd) 보호회로 및 그 제조방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5780828A (en) * 1980-11-07 1982-05-20 Hitachi Ltd Semiconductor integrated circuit device
JPS5922357A (ja) * 1982-07-28 1984-02-04 Toshiba Corp Ｃｍｏｓ形半導体集積回路
JPH0693497B2 (ja) * 1986-07-30 1994-11-16 日本電気株式会社 相補型ｍｉｓ集積回路
GB2199695B (en) * 1987-01-06 1990-07-25 Samsung Semiconductor Inc Dynamic random access memory with selective well biasing
DE3855356T2 (de) * 1987-03-18 1997-01-30 Nippon Electric Co Vorrichtung mit complementäre integrierte Schaltung mit Mitteln zur Verhinderung einer parasitären Auslösung

Also Published As

Publication number Publication date
KR930001392A (ko) 1993-01-16
DE4219927A1 (de) 1992-12-24
ITMI921460A1 (it) 1993-12-12
GB2256968A (en) 1992-12-23
JPH06112435A (ja) 1994-04-22
FR2678109B1 (fr) 1994-01-21
FR2678109A1 (fr) 1992-12-24
GB9212830D0 (en) 1992-07-29
TW245835B (cg-RX-API-DMAC10.html) 1995-04-21
ITMI921460A0 (it) 1992-06-12
JPH0719851B2 (ja) 1995-03-06

Similar Documents

Publication Publication Date Title
KR970072397A (ko) 반도체 장치
KR950007086A (ko) 반도체장치
TW329556B (en) The electrostatic discharge structure of semiconductor device
IT1275595B1 (it) Tiristore a tre terminali con caratteristiche controllate a gate o porta mos singola
TW200518267A (en) Integrated circuit chip
KR900000968A (ko) 반도체 시간 지연소자
FR2356273A1 (fr) Dispositif de protection d'entree pour semi-conducteurs mos
TW345733B (en) Integrated semiconductor circuit
SE0102960D0 (sv) An arrangement for ESD protection of an integrated circuit
EP0646929A3 (en) Bipolar integrated semiconductor circuit implemented with field effect transistors with a stable sensing amplifier.
GB2355121A (en) A stress-follower circuit configuration
IT1258990B (it) Dispositivo di memoria a semiconduttore con linee di alimentazione e di massa del terminale di ingresso isolate da quelle del terminale di uscita
TW334627B (en) Semiconductor integrated circuit
KR920009015A (ko) 반도체 칩의 보호회로
KR960030397A (ko) 반도체집적회로의 보호회로
EP0375037A3 (en) Protection of power integrated circuits against load voltage surges
TW326598B (en) Output circuit
DE59902368D1 (de) Schutzschaltung auf einer integrierten schaltung
AU2840300A (en) Electrostatic discharge protection of integrated circuits
KR960704357A (ko) 반도체 장치와 함께 사용하기 위한 기생 mos 트랜지스터를 구비한 패드구조(pad structure with parasitic mos transistor for use with semiconductor devices)
DE59005485D1 (de) ESD-Schutzstruktur.
IT1261880B (it) Dispositivo di isolamento del substrato, particolarmente per circuiti integrati
DE50112365D1 (de) Antenne
KR930009104A (ko) 집적회로 보호용 회로구성
TW267252B (en) Omnidirectional ESD protecting circuit without latchup effect on CMOS chip

Legal Events

Date Code Title Description
0001 Granted