FR2671911A1 - Dispositif de protection contre les decharges electrostatiques pour dispositifs a semiconducteurs. - Google Patents

Dispositif de protection contre les decharges electrostatiques pour dispositifs a semiconducteurs. Download PDF

Info

Publication number
FR2671911A1
FR2671911A1 FR9108874A FR9108874A FR2671911A1 FR 2671911 A1 FR2671911 A1 FR 2671911A1 FR 9108874 A FR9108874 A FR 9108874A FR 9108874 A FR9108874 A FR 9108874A FR 2671911 A1 FR2671911 A1 FR 2671911A1
Authority
FR
France
Prior art keywords
diffused region
type
conductivity
diffused
current source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR9108874A
Other languages
English (en)
French (fr)
Inventor
Yu Je-Hwan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of FR2671911A1 publication Critical patent/FR2671911A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
FR9108874A 1991-01-23 1991-07-15 Dispositif de protection contre les decharges electrostatiques pour dispositifs a semiconducteurs. Withdrawn FR2671911A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910001128A KR920015549A (ko) 1991-01-23 1991-01-23 반도체소자의 정전방전 보호장치

Publications (1)

Publication Number Publication Date
FR2671911A1 true FR2671911A1 (fr) 1992-07-24

Family

ID=19310210

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9108874A Withdrawn FR2671911A1 (fr) 1991-01-23 1991-07-15 Dispositif de protection contre les decharges electrostatiques pour dispositifs a semiconducteurs.

Country Status (6)

Country Link
JP (1) JPH04249373A (ko)
KR (1) KR920015549A (ko)
DE (1) DE4126047A1 (ko)
FR (1) FR2671911A1 (ko)
GB (1) GB2252200A (ko)
IT (1) IT1251010B (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR940009605B1 (ko) * 1991-09-16 1994-10-15 삼성전자 주식회사 반도체 메모리의 정전방전 보호장치
KR100494343B1 (ko) * 2000-12-27 2005-06-13 주식회사 하이닉스반도체 반도체 소자의 필드 트랜지스터 제조 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62285460A (ja) * 1986-06-03 1987-12-11 Toshiba Corp 入力保護回路
US4825280A (en) * 1986-10-01 1989-04-25 Texas Instruments Incorporated Electrostatic discharge protection for semiconductor devices
EP0388180A1 (en) * 1989-03-14 1990-09-19 Kabushiki Kaisha Toshiba Semiconductor device having protection circuit

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1209271A (en) * 1967-02-27 1970-10-21 Hitachi Ltd Improvements in semiconductor devices
DE3586268T2 (de) * 1984-05-03 1993-02-25 Digital Equipment Corp Eingangs-schutzanordnung fuer vlsi-schaltungsanordnungen.

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62285460A (ja) * 1986-06-03 1987-12-11 Toshiba Corp 入力保護回路
US4825280A (en) * 1986-10-01 1989-04-25 Texas Instruments Incorporated Electrostatic discharge protection for semiconductor devices
EP0388180A1 (en) * 1989-03-14 1990-09-19 Kabushiki Kaisha Toshiba Semiconductor device having protection circuit

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
IEEE INDUSTRY APPLICATIONS SOCIETY ANNUAL MEETING Part II, 18-23 octobre 1987, pages 1660-1673, New York, US; C. DUVVURY et al.: "ESD Protection: Design and Layout Issues for VLSI Circuits" *
PATENT ABSTRACTS OF JAPAN vol. 12, no. 177 (E-613)(3024), 25 mai 1988; & JP - A - 62285460 (TOSHIBA) 11.12.1987 *
PATENT ABSTRACTS OF JAPAN vol. 7, no. 194 (E-195)(1339), 24 août 1983; & JP - A - 5895857 (MITSUBISHI DENKI) 07.06.1983 *

Also Published As

Publication number Publication date
DE4126047A1 (de) 1992-08-06
GB2252200A (en) 1992-07-29
GB9117736D0 (en) 1991-10-02
KR920015549A (ko) 1992-08-27
ITMI912252A1 (it) 1993-02-13
ITMI912252A0 (it) 1991-08-13
IT1251010B (it) 1995-04-28
JPH04249373A (ja) 1992-09-04

Similar Documents

Publication Publication Date Title
EP0568421B1 (fr) Dispositif de protection d'un circuit intégré contre les décharges électrostatiques
EP0543742B1 (fr) Diode de protection monolithique basse tension à faible capacité
FR2631167A1 (fr) Circuit integre comportant une protection contre les decharges electrostatiques
JPH0729972A (ja) 半導体装置
FR2533369A1 (fr) Circuit de protection pour dispositifs a circuit integre et structure de semi-conducteur pour proteger un circuit integre
TW200814290A (en) ESD protection circuit using self-biased current trigger technique and pumping source mechanism
EP0551038A1 (fr) Protection générale d'un circuit intégré contre les surcharges permanentes et décharges électrostatiques
JPH02262374A (ja) 静電気保護システム
EP0554191B1 (fr) Composant de protection pour un circuit dans une automobile
FR3016999A1 (fr) Dispositif electronique, en particulier pour la protection contre les decharges electrostatiques
EP0664564B1 (fr) Circuit intégré incorporant une protection contre les décharges électrostatistiques
JP2000058762A (ja) 回路装置、その製造方法
FR2684240A1 (fr) Transistor mos a zener de protection integree.
FR2762445A1 (fr) Composant de protection d'interface de lignes telephoniques
FR2671911A1 (fr) Dispositif de protection contre les decharges electrostatiques pour dispositifs a semiconducteurs.
FR2789226A1 (fr) Dispositif de protection contre les decharges electrostatiques pour composants microelectroniques sur substrat du type soi
FR2606935A1 (fr) Dispositif semiconducteur a protection contre les claquages de jonction
FR2499325A1 (fr) Circuit de protection pour dispositifs a circuits integres
FR2719158A1 (fr) Circuit d'entrée pour protéger un circuit intégré monolithe.
EP0246139B1 (fr) Dispositif de protection d'entrée pour circuits intégrés en technologie CMOS
FR3057394A1 (fr) Dispositif de protection contre les decharges electrostatiques avec circuit de declenchement distribue
FR3044166A1 (fr) Dispositif electronique, en particulier pour la protection contre des surtensions
US20040124471A1 (en) Semiconductor device
US5784235A (en) Semiconductor IC device including ESD protection circuit
FR2831328A1 (fr) Protection d'un circuit integre contre des decharges electrostatiques et autres surtensions

Legal Events

Date Code Title Description
ST Notification of lapse