FR2664096B1 - Procede de metallisation pour dispositif a semi-conducteur utilisant du nitrure de titane amorphe. - Google Patents

Procede de metallisation pour dispositif a semi-conducteur utilisant du nitrure de titane amorphe.

Info

Publication number
FR2664096B1
FR2664096B1 FR909013545A FR9013545A FR2664096B1 FR 2664096 B1 FR2664096 B1 FR 2664096B1 FR 909013545 A FR909013545 A FR 909013545A FR 9013545 A FR9013545 A FR 9013545A FR 2664096 B1 FR2664096 B1 FR 2664096B1
Authority
FR
France
Prior art keywords
semiconductor device
titanium nitride
metallization process
amorphous titanium
amorphous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR909013545A
Other languages
English (en)
Other versions
FR2664096A1 (fr
Inventor
Sangin Lee
Naein Lee
Ilkwon Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of FR2664096A1 publication Critical patent/FR2664096A1/fr
Application granted granted Critical
Publication of FR2664096B1 publication Critical patent/FR2664096B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
FR909013545A 1990-06-29 1990-10-31 Procede de metallisation pour dispositif a semi-conducteur utilisant du nitrure de titane amorphe. Expired - Fee Related FR2664096B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900009784A KR930002672B1 (ko) 1990-06-29 1990-06-29 비정질 질화티타늄막을 이용한 금속배선 형성방법

Publications (2)

Publication Number Publication Date
FR2664096A1 FR2664096A1 (fr) 1992-01-03
FR2664096B1 true FR2664096B1 (fr) 1993-04-30

Family

ID=19300658

Family Applications (1)

Application Number Title Priority Date Filing Date
FR909013545A Expired - Fee Related FR2664096B1 (fr) 1990-06-29 1990-10-31 Procede de metallisation pour dispositif a semi-conducteur utilisant du nitrure de titane amorphe.

Country Status (6)

Country Link
JP (1) JP2772726B2 (fr)
KR (1) KR930002672B1 (fr)
DE (1) DE4031677A1 (fr)
FR (1) FR2664096B1 (fr)
GB (1) GB2245762B (fr)
IT (1) IT1243053B (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6770924B1 (en) * 1994-05-13 2004-08-03 Micron Technology, Inc. Amorphous TiN films for an integrated capacitor dielectric/bottom plate using high dielectric constant materials
KR100494320B1 (ko) * 1997-12-30 2005-08-31 주식회사 하이닉스반도체 반도체소자의확산방지막형성방법
KR100401498B1 (ko) * 2001-01-11 2003-10-17 주식회사 하이닉스반도체 반도체장치의 배리어층 형성방법
DE10146359B4 (de) * 2001-09-20 2006-12-28 Advanced Micro Devices, Inc., Sunnyvale Eine Metallisierungsprozesssequenz
US20090130331A1 (en) * 2005-08-16 2009-05-21 Hitachi Kokusai Electric Inc. Method of Forming Thin Film and Method of Manufacturing Semiconductor Device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63213959A (ja) * 1987-03-03 1988-09-06 Toshiba Corp 半導体装置の製造方法
JPH01165055A (ja) * 1987-09-30 1989-06-29 Sharp Corp 光磁気記録媒体
JPH01220824A (ja) * 1988-02-29 1989-09-04 Toshiba Corp 半導体装置の製造方法
US4990997A (en) * 1988-04-20 1991-02-05 Fujitsu Limited Crystal grain diffusion barrier structure for a semiconductor device
JP2751223B2 (ja) * 1988-07-14 1998-05-18 セイコーエプソン株式会社 半導体装置およびその製造方法
JPH0666287B2 (ja) * 1988-07-25 1994-08-24 富士通株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
DE4031677C2 (fr) 1993-07-22
GB2245762B (en) 1995-02-08
IT9021594A1 (it) 1992-03-28
GB9021287D0 (en) 1990-11-14
FR2664096A1 (fr) 1992-01-03
IT1243053B (it) 1994-05-23
GB2245762A (en) 1992-01-08
DE4031677A1 (de) 1992-01-09
KR930002672B1 (ko) 1993-04-07
JP2772726B2 (ja) 1998-07-09
IT9021594A0 (it) 1990-09-28
KR920001658A (ko) 1992-01-30
JPH05109656A (ja) 1993-04-30

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20100630