FR2654883B1 - Circuit d'attaque de dispositifs de commutation. - Google Patents

Circuit d'attaque de dispositifs de commutation.

Info

Publication number
FR2654883B1
FR2654883B1 FR9010763A FR9010763A FR2654883B1 FR 2654883 B1 FR2654883 B1 FR 2654883B1 FR 9010763 A FR9010763 A FR 9010763A FR 9010763 A FR9010763 A FR 9010763A FR 2654883 B1 FR2654883 B1 FR 2654883B1
Authority
FR
France
Prior art keywords
driving circuit
switching device
device driving
switching
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9010763A
Other languages
English (en)
Other versions
FR2654883A1 (fr
Inventor
Masanori Fukunaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2654883A1 publication Critical patent/FR2654883A1/fr
Application granted granted Critical
Publication of FR2654883B1 publication Critical patent/FR2654883B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/38—Means for preventing simultaneous conduction of switches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/538—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a push-pull configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08128—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)
  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
FR9010763A 1989-11-22 1990-08-29 Circuit d'attaque de dispositifs de commutation. Expired - Fee Related FR2654883B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1305346A JPH03169273A (ja) 1989-11-22 1989-11-22 スイッチングデバイス駆動回路

Publications (2)

Publication Number Publication Date
FR2654883A1 FR2654883A1 (fr) 1991-05-24
FR2654883B1 true FR2654883B1 (fr) 1994-05-06

Family

ID=17944008

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9010763A Expired - Fee Related FR2654883B1 (fr) 1989-11-22 1990-08-29 Circuit d'attaque de dispositifs de commutation.

Country Status (4)

Country Link
US (1) US5099138A (fr)
JP (1) JPH03169273A (fr)
DE (1) DE4032014A1 (fr)
FR (1) FR2654883B1 (fr)

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US5274274A (en) * 1992-03-23 1993-12-28 Power Integrations, Inc. Dual threshold differential discriminator
US5408150A (en) * 1992-06-04 1995-04-18 Linear Technology Corporation Circuit for driving two power mosfets in a half-bridge configuration
US5365118A (en) * 1992-06-04 1994-11-15 Linear Technology Corp. Circuit for driving two power mosfets in a half-bridge configuration
US5311084A (en) * 1992-06-23 1994-05-10 At&T Bell Laboratories Integrated circuit buffer with controlled rise/fall time
US5410229A (en) * 1992-07-31 1995-04-25 Black & Decker Inc. Motor speed control circuit with electronic clutch
US5406150A (en) * 1992-08-24 1995-04-11 Silicon Systems Inc Control system for motors and inductive loads
US6377087B1 (en) * 1993-01-19 2002-04-23 U.S. Philips Corporation Driving scheme for bipolar transistors
US5331593A (en) * 1993-03-03 1994-07-19 Micron Semiconductor, Inc. Read circuit for accessing dynamic random access memories (DRAMS)
US5394037A (en) * 1993-04-05 1995-02-28 Lattice Semiconductor Corporation Sense amplifiers and sensing methods
US5502610A (en) * 1993-09-02 1996-03-26 Micrel, Inc. Switching regulator having high current prevention features
US5546045A (en) * 1993-11-05 1996-08-13 National Semiconductor Corp. Rail to rail operational amplifier output stage
JP3325697B2 (ja) * 1994-01-20 2002-09-17 三菱電機株式会社 パワーデバイスの制御装置およびモータの駆動制御装置
AT402245B (de) * 1994-03-02 1997-03-25 Siemens Ag Oesterreich Ansteuerschaltung für zwei in serie geschaltete transistoren
US5545955A (en) * 1994-03-04 1996-08-13 International Rectifier Corporation MOS gate driver for ballast circuits
US6147545A (en) * 1994-03-08 2000-11-14 Texas Instruments Incorporated Bridge control circuit for eliminating shoot-through current
US5841313A (en) * 1995-08-30 1998-11-24 Cherry Semiconductor Corporation Switch with programmable delay
US5781058A (en) * 1995-08-30 1998-07-14 Cherry Semiconductor Corporation Totem pole driver with cross conduction protection and default low impedance state output
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JP3394377B2 (ja) * 1996-01-09 2003-04-07 三菱電機株式会社 半導体装置および半導体モジュール
DE19604341C2 (de) * 1996-02-07 1998-07-02 Fraunhofer Ges Forschung Einrichtung zur Ansteuerung von Schaltelementen, insbesondere MOS-FETS in Brückenzweigpaaren
US5777496A (en) * 1996-03-27 1998-07-07 Aeg Schneider Automation, Inc. Circuit for preventing more than one transistor from conducting
JP3421507B2 (ja) * 1996-07-05 2003-06-30 三菱電機株式会社 半導体素子の駆動回路
JPH10271710A (ja) * 1997-03-28 1998-10-09 Mitsubishi Electric Corp 電源切替回路
KR100433799B1 (ko) * 1998-12-03 2004-06-04 가부시키가이샤 히타치세이사쿠쇼 전압구동형 스위칭 소자의 게이트 구동회로
EP1063772A1 (fr) 1999-04-21 2000-12-27 Infineon Technologies AG Circuit d'attaque pour demi-pont
JP2001268899A (ja) * 2000-03-17 2001-09-28 Fujitsu Ltd 電源制御装置、電源回路及び電源制御方法並びに電子機器
US6323703B1 (en) * 2000-05-04 2001-11-27 Exar Corporation Indirect output current sensing
JP4286541B2 (ja) * 2001-02-06 2009-07-01 エヌエックスピー ビー ヴィ 切替え型ｆｅｔ回路
DE10147882B4 (de) * 2001-09-28 2005-06-23 Infineon Technologies Ag Halbbrückenschaltung und Verfahren zu deren Ansteuerung
US6809571B2 (en) * 2001-10-01 2004-10-26 International Rectifier Corporation Power control circuit with active impedance to avoid interference and sensing problems
US6687142B2 (en) * 2001-12-17 2004-02-03 Coolit Systems Inc. AC to DC inverter for use with AC synchronous motors
ATE377285T1 (de) * 2002-02-06 2007-11-15 Ebm Papst St Georgen Gmbh & Co Verfahren zum kommutieren eines elektronisch kommutierten motors, und motor zur durchf hrung eines solchen verfahrens
US6747300B2 (en) * 2002-03-04 2004-06-08 Ternational Rectifier Corporation H-bridge drive utilizing a pair of high and low side MOSFETs in a common insulation housing
JP2003324937A (ja) * 2002-05-09 2003-11-14 Mitsubishi Electric Corp 駆動装置
DE10241564B3 (de) * 2002-09-07 2004-01-15 Semikron Elektronik Gmbh Verfahren zur Fehlererkennung in der Datenübertragung zu einer Treiberschaltung
DE10316223B3 (de) * 2003-04-09 2004-09-09 Infineon Technologies Ag Verfahren und Vorrichtung zur Ermittlung des Schaltzustandes eines Transistors
DE10343278B4 (de) * 2003-09-18 2006-01-05 Infineon Technologies Ag Halbbrückenschaltung mit einer Einrichtung zur Vermeidung von Querströmen
US7187226B2 (en) * 2004-07-01 2007-03-06 Analog Devices, Inc. Anti-cross conduction drive control circuit and method
JP4442348B2 (ja) * 2004-07-22 2010-03-31 株式会社日立製作所 電力変換装置
US7551007B2 (en) * 2005-02-11 2009-06-23 Fairchild Semiconductor Corporation Partial switch gate driver
JP2008259283A (ja) * 2007-04-03 2008-10-23 Sanken Electric Co Ltd ゲート駆動回路
JP4650518B2 (ja) * 2008-04-10 2011-03-16 株式会社デンソー モータ制御装置
US8749209B2 (en) * 2008-05-05 2014-06-10 Infineon Technologies Austria Ag System and method for providing adaptive dead times
JP5428919B2 (ja) * 2010-02-12 2014-02-26 株式会社デンソー 貫通電流防止回路および車両用モータ駆動回路
US8749939B2 (en) * 2011-05-13 2014-06-10 Mks Instruments, Inc. Method and system for shoot-through protection
KR101297460B1 (ko) * 2012-04-24 2013-08-16 엘에스산전 주식회사 게이트 구동 장치
US9166469B2 (en) * 2012-08-29 2015-10-20 Eaton Corporation System for optimizing switching dead-time and method of making same
US9891640B2 (en) * 2013-06-14 2018-02-13 Infineon Technologies Ag Sensing element for semiconductor
US9362859B2 (en) * 2013-09-25 2016-06-07 General Electric Company System and method for controlling switching elements within a single-phase bridge circuit
US9130552B2 (en) * 2013-11-05 2015-09-08 Texas Instruments Incorporated Cross-conduction detector for switching regulator
EP2894776B1 (fr) * 2014-01-09 2017-11-29 Dialog Semiconductor (UK) Limited Convertisseur CC/CC haute tension à étage de sortie abaisseur maître-esclave
JP6260552B2 (ja) * 2015-02-26 2018-01-17 株式会社オートネットワーク技術研究所 電力供給装置
US9712058B1 (en) 2016-08-29 2017-07-18 Silanna Asia Pte Ltd High speed tri-level input power converter gate driver
EP3309964A1 (fr) * 2016-10-14 2018-04-18 Siemens Aktiengesellschaft Système de reconnaissance d'état de commutation d'un élément semi-conducteur commandé en tension
DE112016007541T5 (de) 2016-12-22 2019-09-19 Mitsubishi Electric Corporation Halbleitervorrichtung, Inverter und Automobil
JP6961944B2 (ja) * 2017-01-18 2021-11-05 富士電機株式会社 パワー半導体モジュール
DE102017218305A1 (de) * 2017-10-13 2019-04-18 Conti Temic Microelectronic Gmbh Verfahren zum Steuern einer Halbleiterbrücke eines elektrisch betreibbaren Motors mittels eines Rampensignals, Steuerungseinrichtung sowie Anordnung
TWI650922B (zh) * 2018-02-07 2019-02-11 新唐科技股份有限公司 具保護電路之半橋電路驅動晶片及其保護方法
US10110221B1 (en) * 2018-02-21 2018-10-23 Navitas Semiconductor, Inc. Power transistor control signal gating
US10345832B1 (en) * 2018-05-14 2019-07-09 Asm Ip Holding B.V. Insulation system and substrate processing apparatus
EP4369604A1 (fr) * 2022-11-10 2024-05-15 Mitsubishi Electric R&D Centre Europe B.V. Protection contre le chevauchement utilisant un miroir de courant de grille dans un convertisseur de puissance

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Also Published As

Publication number Publication date
JPH03169273A (ja) 1991-07-22
DE4032014A1 (de) 1991-05-23
FR2654883A1 (fr) 1991-05-24
US5099138A (en) 1992-03-24

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Legal Events

Date Code Title Description
ST Notification of lapse