FR2636777B1 - Dispositif semiconducteur a circuit de decharge de chaleur - Google Patents

Dispositif semiconducteur a circuit de decharge de chaleur

Info

Publication number
FR2636777B1
FR2636777B1 FR8911128A FR8911128A FR2636777B1 FR 2636777 B1 FR2636777 B1 FR 2636777B1 FR 8911128 A FR8911128 A FR 8911128A FR 8911128 A FR8911128 A FR 8911128A FR 2636777 B1 FR2636777 B1 FR 2636777B1
Authority
FR
France
Prior art keywords
semiconductor device
discharge circuit
heat discharge
heat
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR8911128A
Other languages
English (en)
Other versions
FR2636777A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP20976488A external-priority patent/JPH0258254A/ja
Priority claimed from JP63209765A external-priority patent/JPH07120735B2/ja
Application filed by Individual filed Critical Individual
Publication of FR2636777A1 publication Critical patent/FR2636777A1/fr
Application granted granted Critical
Publication of FR2636777B1 publication Critical patent/FR2636777B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3731—Ceramic materials or glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
FR8911128A 1988-08-23 1989-08-22 Dispositif semiconducteur a circuit de decharge de chaleur Expired - Fee Related FR2636777B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP20976488A JPH0258254A (ja) 1988-08-23 1988-08-23 半導体素子
JP63209765A JPH07120735B2 (ja) 1988-08-23 1988-08-23 半導体チップ

Publications (2)

Publication Number Publication Date
FR2636777A1 FR2636777A1 (fr) 1990-03-23
FR2636777B1 true FR2636777B1 (fr) 1994-02-11

Family

ID=26517641

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8911128A Expired - Fee Related FR2636777B1 (fr) 1988-08-23 1989-08-22 Dispositif semiconducteur a circuit de decharge de chaleur

Country Status (3)

Country Link
DE (1) DE3927866A1 (fr)
FR (1) FR2636777B1 (fr)
GB (1) GB2222721B (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5057908A (en) * 1990-07-10 1991-10-15 Iowa State University Research Foundation, Inc. High power semiconductor device with integral heat sink
EP0520294B1 (fr) * 1991-06-24 1998-08-26 Siemens Aktiengesellschaft Composant semi-conducteur et son procédé de fabrication
US5396403A (en) * 1993-07-06 1995-03-07 Hewlett-Packard Company Heat sink assembly with thermally-conductive plate for a plurality of integrated circuits on a substrate
FR2754390A1 (fr) * 1996-10-07 1998-04-10 Gec Alsthom Transport Sa Module de puissance a composants electroniques semi-conducteurs de puissance et interrupteur de forte puissance comportant au moins un tel module de puissance
US6620045B2 (en) 2001-04-20 2003-09-16 King Show Games, Llc System and method for executing trades for bonus activity in gaming systems
US7704142B2 (en) 2001-04-20 2010-04-27 King Show Games, Inc. System and method for facilitating trades for bonus activity in gaming systems
JP2006229180A (ja) * 2005-01-24 2006-08-31 Toyota Motor Corp 半導体モジュールおよび半導体装置

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1265007A (fr) * 1968-12-09 1972-03-01
US3609471A (en) * 1969-07-22 1971-09-28 Gen Electric Semiconductor device with thermally conductive dielectric barrier
US3686748A (en) * 1970-04-13 1972-08-29 William E Engeler Method and apparatus for providng thermal contact and electrical isolation of integrated circuits
DE2030809A1 (de) * 1970-06-23 1971-12-30 Semikron Gleichrichterbau Halbleiter-Anordnung
US4236167A (en) * 1978-02-06 1980-11-25 Rca Corporation Stepped oxide, high voltage MOS transistor with near intrinsic channel regions of different doping levels
EP0015053A1 (fr) * 1979-01-27 1980-09-03 LUCAS INDUSTRIES public limited company Procédé pour fabriquer un composant à semi-conducteur de puissance et composant ainsi fabriqué
JPS56101777A (en) * 1980-01-18 1981-08-14 Futaba Corp Mos type semiconductor device
US4256792A (en) * 1980-01-25 1981-03-17 Honeywell Inc. Composite electronic substrate of alumina uniformly needled through with aluminum nitride
JPS5752185A (en) * 1980-05-20 1982-03-27 De Beers Ind Diamond Heat sink
US4620215A (en) * 1982-04-16 1986-10-28 Amdahl Corporation Integrated circuit packaging systems with double surface heat dissipation
JPS6066843A (ja) * 1983-09-22 1985-04-17 Hitachi Ltd 集積回路パツケ−ジ
JPH0810710B2 (ja) * 1984-02-24 1996-01-31 株式会社東芝 良熱伝導性基板の製造方法
DE3587481T2 (de) * 1984-02-27 1993-12-16 Toshiba Kawasaki Kk Schaltungssubstrat mit hoher Wärmeleitfähigkeit.
JPS61212045A (ja) * 1985-03-18 1986-09-20 Hitachi Ltd 半導体装置
GB8509439D0 (en) * 1985-04-12 1985-05-15 Artus R G C Heat sink
JPH07107921B2 (ja) * 1985-11-15 1995-11-15 富士通株式会社 プラスチツク・パツケ−ジ型半導体装置
KR880002260A (ko) * 1986-07-09 1988-04-30 로버트 에스. 헐스 열적으로 향상된 대규모 집적회로 패키지 및 집적회로 다이의 장착방법
US5077244A (en) * 1986-08-13 1991-12-31 Hitachi Metals, Ltd. Aluminum nitride sintered body and semiconductor substrate thereof
GB2214719B (en) * 1988-01-26 1991-07-24 Gen Electric Co Plc Housing for electronic device

Also Published As

Publication number Publication date
DE3927866A1 (de) 1990-03-08
FR2636777A1 (fr) 1990-03-23
GB2222721B (en) 1993-07-28
GB2222721A (en) 1990-03-14
GB8918867D0 (en) 1989-09-27

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Legal Events

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ST Notification of lapse