FR2591389B1 - Transistor a effet de champ selectif aux ions et procede de fabrication - Google Patents
Transistor a effet de champ selectif aux ions et procede de fabricationInfo
- Publication number
- FR2591389B1 FR2591389B1 FR8518037A FR8518037A FR2591389B1 FR 2591389 B1 FR2591389 B1 FR 2591389B1 FR 8518037 A FR8518037 A FR 8518037A FR 8518037 A FR8518037 A FR 8518037A FR 2591389 B1 FR2591389 B1 FR 2591389B1
- Authority
- FR
- France
- Prior art keywords
- manufacturing
- field effect
- effect transistor
- ion selective
- selective field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Molecular Biology (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8518037A FR2591389B1 (fr) | 1985-12-05 | 1985-12-05 | Transistor a effet de champ selectif aux ions et procede de fabrication |
EP19860906869 EP0250476A1 (fr) | 1985-12-05 | 1986-12-04 | Transistor a effet de champ selectif aux ions et procede de fabrication |
JP50637286A JPS63501738A (ja) | 1985-12-05 | 1986-12-04 | イオン選択性電界効果トランジスタおよび製造法 |
PCT/FR1986/000420 WO1987003687A1 (fr) | 1985-12-05 | 1986-12-04 | Transistor a effet de champ selectif aux ions et procede de fabrication |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8518037A FR2591389B1 (fr) | 1985-12-05 | 1985-12-05 | Transistor a effet de champ selectif aux ions et procede de fabrication |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2591389A1 FR2591389A1 (fr) | 1987-06-12 |
FR2591389B1 true FR2591389B1 (fr) | 1988-08-12 |
Family
ID=9325490
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8518037A Expired FR2591389B1 (fr) | 1985-12-05 | 1985-12-05 | Transistor a effet de champ selectif aux ions et procede de fabrication |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0250476A1 (ja) |
JP (1) | JPS63501738A (ja) |
FR (1) | FR2591389B1 (ja) |
WO (1) | WO1987003687A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2698211B1 (fr) * | 1992-11-13 | 1995-02-03 | Lyon Ecole Centrale | Procédé de fabrication avec encapsulation, d'un capteur de type ISFET et capteur en faisant application. |
FR2702566B1 (fr) * | 1993-03-08 | 1995-06-09 | Ifremer | Capteur electrochimique integre de mesure de ph et son procede de fabrication. |
FR2706616B1 (fr) * | 1993-06-14 | 1995-09-01 | Lyon Ecole Centrale | Capteur de type ISFET dont le substrat est isolé électriquement. |
US5944970A (en) * | 1997-04-29 | 1999-08-31 | Honeywell Inc. | Solid state electrochemical sensors |
JP4065855B2 (ja) | 2004-01-21 | 2008-03-26 | 株式会社日立製作所 | 生体および化学試料検査装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4322680A (en) * | 1980-03-03 | 1982-03-30 | University Of Utah Research Foundation | Chemically sensitive JFET transducer devices utilizing a blocking interface |
JPS58225344A (ja) * | 1982-06-25 | 1983-12-27 | Toa Medical Electronics Co Ltd | 濃度自動分析装置 |
NL8400612A (nl) * | 1984-02-28 | 1985-09-16 | Cordis Europ | Chemisch gevoelige fet-component. |
-
1985
- 1985-12-05 FR FR8518037A patent/FR2591389B1/fr not_active Expired
-
1986
- 1986-12-04 EP EP19860906869 patent/EP0250476A1/fr not_active Withdrawn
- 1986-12-04 JP JP50637286A patent/JPS63501738A/ja active Pending
- 1986-12-04 WO PCT/FR1986/000420 patent/WO1987003687A1/fr not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
JPS63501738A (ja) | 1988-07-14 |
WO1987003687A1 (fr) | 1987-06-18 |
FR2591389A1 (fr) | 1987-06-12 |
EP0250476A1 (fr) | 1988-01-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2633100B1 (fr) | Transistor a effet de champ et procede de fabrication | |
FR2647596B1 (fr) | Transistor a effet de champ a grille isolee et procede de fabrication | |
FR2546664B1 (fr) | Procede de fabrication de transistors a effet de champ | |
FR2544916B1 (fr) | Procede de fabrication de transistors a effet de champ mos | |
FR2639762B1 (fr) | Procede de fabrication de transistors a effet de champ asymetriques et transistors correspondants | |
FR2559958B1 (fr) | Dispositif semi-conducteur metal-oxyde a effet de champ et son procede de fabrication | |
BE895124A (fr) | Pochemedicale et son procede de fabrication | |
EP0173953A3 (en) | Method for manufacturing a semiconductor device having a gate electrode | |
AU549380B2 (en) | Ion selective electrodes and calibration method | |
DE3571103D1 (en) | Gate array integrated circuit device and production method therefor | |
FR2579840B1 (fr) | Circuit magnetique enroule sur chant, procede de fabrication et bande decoupee | |
EP0181091A3 (en) | Schottky gate field effect transistor and manufacturing method thereof | |
FR2578658B1 (fr) | Plaque a microlentilles et son procede de fabrication | |
FR2632775B1 (fr) | Transistor a effet de champ et procede de fabrication | |
FR2337428A1 (fr) | Transistor a effet de champ a canal composite et procede de fabrication | |
DE3378239D1 (en) | Method of manufacturing a semiconductor device having a self-aligned gate electrode | |
FR2492166B1 (fr) | Transistor a effet de champ et son procede de fabrication | |
EP0255970A3 (en) | A method of manufacturing an insulated gate field effect transistor | |
FR2555979B1 (fr) | Electrode de desionisation electrochimique et son procede de fabrication | |
FR2587537B1 (fr) | Inductance miniature et son procede de fabrication | |
FR2591389B1 (fr) | Transistor a effet de champ selectif aux ions et procede de fabrication | |
FR2577134B1 (fr) | Composition epilatoire et son procede de fabrication | |
FR2576195B1 (fr) | Perfectionnement aux chaussures a semelle moulee par injection et leur procede de fabrication | |
FR2512590B1 (fr) | Transistor a effet de champ du type a jonction et procede de fabrication | |
FR2731841B1 (fr) | Transistors a effet de champ du type a grille isolee et son procede de fabrication |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |