FR2572850B1 - Dispositif d'un composant semi-conducteur notamment circuit integre bipolaire, comportant des transistors du type npn et pnp, lateral et vertical - Google Patents
Dispositif d'un composant semi-conducteur notamment circuit integre bipolaire, comportant des transistors du type npn et pnp, lateral et verticalInfo
- Publication number
- FR2572850B1 FR2572850B1 FR8516362A FR8516362A FR2572850B1 FR 2572850 B1 FR2572850 B1 FR 2572850B1 FR 8516362 A FR8516362 A FR 8516362A FR 8516362 A FR8516362 A FR 8516362A FR 2572850 B1 FR2572850 B1 FR 2572850B1
- Authority
- FR
- France
- Prior art keywords
- pnp
- npn
- lateral
- integrated circuit
- semiconductor component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0826—Combination of vertical complementary transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
- H01L21/8224—Bipolar technology comprising a combination of vertical and lateral transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0821—Combination of lateral and vertical transistors only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59232870A JPH0638476B2 (ja) | 1984-11-05 | 1984-11-05 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2572850A1 FR2572850A1 (fr) | 1986-05-09 |
FR2572850B1 true FR2572850B1 (fr) | 1988-09-09 |
Family
ID=16946115
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8516362A Expired FR2572850B1 (fr) | 1984-11-05 | 1985-11-05 | Dispositif d'un composant semi-conducteur notamment circuit integre bipolaire, comportant des transistors du type npn et pnp, lateral et vertical |
Country Status (10)
Country | Link |
---|---|
JP (1) | JPH0638476B2 (fr) |
KR (1) | KR940005447B1 (fr) |
CN (1) | CN1004845B (fr) |
AT (1) | AT395272B (fr) |
AU (1) | AU572005B2 (fr) |
CA (1) | CA1254671A (fr) |
DE (1) | DE3539208C2 (fr) |
FR (1) | FR2572850B1 (fr) |
GB (1) | GB2167231B (fr) |
NL (1) | NL194711C (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6768183B2 (en) * | 2001-04-20 | 2004-07-27 | Denso Corporation | Semiconductor device having bipolar transistors |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1520515A (fr) * | 1967-02-07 | 1968-04-12 | Radiotechnique Coprim Rtc | Circuits intégrés comportant des transistors de types opposés et leurs procédésde fabrication |
JPS5710964A (en) * | 1980-06-25 | 1982-01-20 | Fujitsu Ltd | Manufacture of semiconductor device |
EP0093304B1 (fr) * | 1982-04-19 | 1986-01-15 | Matsushita Electric Industrial Co., Ltd. | Circuit intégré semi-conducteur et son procédé de fabrication |
JPS58212159A (ja) * | 1982-06-02 | 1983-12-09 | Matsushita Electric Ind Co Ltd | 半導体集積回路装置の製造方法 |
-
1984
- 1984-11-05 JP JP59232870A patent/JPH0638476B2/ja not_active Expired - Lifetime
-
1985
- 1985-10-15 KR KR1019850007581A patent/KR940005447B1/ko not_active IP Right Cessation
- 1985-10-28 CA CA000493970A patent/CA1254671A/fr not_active Expired
- 1985-10-30 GB GB08526749A patent/GB2167231B/en not_active Expired
- 1985-11-02 CN CN85108134.7A patent/CN1004845B/zh not_active Expired
- 1985-11-04 AU AU49315/85A patent/AU572005B2/en not_active Expired
- 1985-11-05 DE DE3539208A patent/DE3539208C2/de not_active Expired - Fee Related
- 1985-11-05 FR FR8516362A patent/FR2572850B1/fr not_active Expired
- 1985-11-05 AT AT0318985A patent/AT395272B/de not_active IP Right Cessation
- 1985-11-05 NL NL8503033A patent/NL194711C/nl not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
FR2572850A1 (fr) | 1986-05-09 |
NL8503033A (nl) | 1986-06-02 |
CN85108134A (zh) | 1986-07-02 |
CN1004845B (zh) | 1989-07-19 |
NL194711C (nl) | 2002-12-03 |
CA1254671A (fr) | 1989-05-23 |
ATA318985A (de) | 1992-03-15 |
NL194711B (nl) | 2002-08-01 |
DE3539208C2 (de) | 1998-04-09 |
GB8526749D0 (en) | 1985-12-04 |
JPH0638476B2 (ja) | 1994-05-18 |
GB2167231A (en) | 1986-05-21 |
AU4931585A (en) | 1986-05-15 |
AU572005B2 (en) | 1988-04-28 |
JPS61111575A (ja) | 1986-05-29 |
AT395272B (de) | 1992-11-10 |
KR860004472A (ko) | 1986-06-23 |
GB2167231B (en) | 1988-03-02 |
KR940005447B1 (ko) | 1994-06-18 |
DE3539208A1 (de) | 1986-05-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3476493D1 (en) | A semiconductor integrated circuit device comprising an mos transistor and a bipolar transistor and a manufacturing method of the same | |
KR900015317A (ko) | 단일집적회로의 칩내에 수직형 바이폴라 트랜지스터와 고압 cmos트랜지스터를 형성하는 공정 | |
FR2593966B1 (fr) | Structure semi-conductrice monolithique d'un transistor bipolaire a heterojonction et d'un laser | |
GB2186117B (en) | Monolithically integrated semiconductor device containing bipolar junction,cmosand dmos transistors and low leakage diodes and a method for its fabrication | |
EP0090940A3 (en) | Method of forming emitter and intrinsic base regions of a bipolar transistor | |
DE3378446D1 (en) | Integrated semiconductor circuit, comprising bipolar and mos transistors on the same chip, and method of making the same | |
GB2204995B (en) | Monolithically integrated semiconductor device having bidirectional conducting capability and method of fabrication | |
FR2553576B1 (fr) | Dispositif a circuits integres a semi-conducteurs et procede de fabrication d'un tel dispositif | |
DE68923017D1 (de) | Bipolar- und CMOS-Transistoren verwendende integrierte Halbleiterschaltung. | |
FR2520157B1 (fr) | Dispositif semi-conducteur du genre transistor a heterojonction(s) | |
DE3272436D1 (en) | Method of making a monolithic integrated circuit with at least one isolated gate field effect transistor and one bipolar transistor | |
FR2586862B1 (fr) | Dispositif a semiconducteur en particulier du type mosfet. | |
DE3479547D1 (en) | Bipolar transistor mos transistor hybrid semiconductor integrated circuit device | |
FR2491679B1 (fr) | Methode d'isolation d'un dispositif a semi-conducteurs et dispositif ou circuit integre obtenu | |
DE3785483D1 (de) | Halbleiteranordnung mit einem bipolartransistor und feldeffekttransistoren. | |
EP0266205A3 (en) | Semiconductor device constituting bipolar transistor | |
KR860005450A (ko) | 반도체 집적 회로장치 및 그의 제조방법 | |
GB8531025D0 (en) | Bipolar transistor integrated circuit | |
EP0182631A3 (fr) | Dispositif semi-conducteur de lecture | |
FR2572850B1 (fr) | Dispositif d'un composant semi-conducteur notamment circuit integre bipolaire, comportant des transistors du type npn et pnp, lateral et vertical | |
KR0133938B1 (en) | Bipolar mos logic circuit and semiconductor integrated circuit | |
IT8547677A1 (it) | Dispositivo e semiconduttore in particolare circuito darlington bipolare -mos integrato | |
EP0237933A3 (en) | Semiconductor device having darlington-connected transistor circuit | |
GB2151865B (en) | Semiconductor integrated circuit using vertical pnp transistors | |
FR2582151B1 (fr) | Dispositif a semiconducteur du type transistor bipolaire |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |