GB2167231B - Semiconductor devices - Google Patents
Semiconductor devicesInfo
- Publication number
- GB2167231B GB2167231B GB08526749A GB8526749A GB2167231B GB 2167231 B GB2167231 B GB 2167231B GB 08526749 A GB08526749 A GB 08526749A GB 8526749 A GB8526749 A GB 8526749A GB 2167231 B GB2167231 B GB 2167231B
- Authority
- GB
- United Kingdom
- Prior art keywords
- semiconductor devices
- semiconductor
- devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0826—Combination of vertical complementary transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
- H01L21/8224—Bipolar technology comprising a combination of vertical and lateral transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0821—Combination of lateral and vertical transistors only
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59232870A JPH0638476B2 (en) | 1984-11-05 | 1984-11-05 | Semiconductor device |
Publications (3)
Publication Number | Publication Date |
---|---|
GB8526749D0 GB8526749D0 (en) | 1985-12-04 |
GB2167231A GB2167231A (en) | 1986-05-21 |
GB2167231B true GB2167231B (en) | 1988-03-02 |
Family
ID=16946115
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB08526749A Expired GB2167231B (en) | 1984-11-05 | 1985-10-30 | Semiconductor devices |
Country Status (10)
Country | Link |
---|---|
JP (1) | JPH0638476B2 (en) |
KR (1) | KR940005447B1 (en) |
CN (1) | CN1004845B (en) |
AT (1) | AT395272B (en) |
AU (1) | AU572005B2 (en) |
CA (1) | CA1254671A (en) |
DE (1) | DE3539208C2 (en) |
FR (1) | FR2572850B1 (en) |
GB (1) | GB2167231B (en) |
NL (1) | NL194711C (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6768183B2 (en) * | 2001-04-20 | 2004-07-27 | Denso Corporation | Semiconductor device having bipolar transistors |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1520515A (en) * | 1967-02-07 | 1968-04-12 | Radiotechnique Coprim Rtc | Integrated circuits incorporating transistors of opposite types and methods of making them |
JPS5710964A (en) * | 1980-06-25 | 1982-01-20 | Fujitsu Ltd | Manufacture of semiconductor device |
EP0093304B1 (en) * | 1982-04-19 | 1986-01-15 | Matsushita Electric Industrial Co., Ltd. | Semiconductor ic and method of making the same |
JPS58212159A (en) * | 1982-06-02 | 1983-12-09 | Matsushita Electric Ind Co Ltd | Semiconductor integrated circuit device |
-
1984
- 1984-11-05 JP JP59232870A patent/JPH0638476B2/en not_active Expired - Lifetime
-
1985
- 1985-10-15 KR KR1019850007581A patent/KR940005447B1/en not_active IP Right Cessation
- 1985-10-28 CA CA000493970A patent/CA1254671A/en not_active Expired
- 1985-10-30 GB GB08526749A patent/GB2167231B/en not_active Expired
- 1985-11-02 CN CN85108134.7A patent/CN1004845B/en not_active Expired
- 1985-11-04 AU AU49315/85A patent/AU572005B2/en not_active Expired
- 1985-11-05 NL NL8503033A patent/NL194711C/en not_active IP Right Cessation
- 1985-11-05 DE DE3539208A patent/DE3539208C2/en not_active Expired - Fee Related
- 1985-11-05 AT AT0318985A patent/AT395272B/en not_active IP Right Cessation
- 1985-11-05 FR FR8516362A patent/FR2572850B1/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS61111575A (en) | 1986-05-29 |
JPH0638476B2 (en) | 1994-05-18 |
CN85108134A (en) | 1986-07-02 |
AU572005B2 (en) | 1988-04-28 |
GB8526749D0 (en) | 1985-12-04 |
NL194711C (en) | 2002-12-03 |
GB2167231A (en) | 1986-05-21 |
NL8503033A (en) | 1986-06-02 |
AT395272B (en) | 1992-11-10 |
KR940005447B1 (en) | 1994-06-18 |
CA1254671A (en) | 1989-05-23 |
ATA318985A (en) | 1992-03-15 |
AU4931585A (en) | 1986-05-15 |
FR2572850B1 (en) | 1988-09-09 |
FR2572850A1 (en) | 1986-05-09 |
CN1004845B (en) | 1989-07-19 |
DE3539208C2 (en) | 1998-04-09 |
NL194711B (en) | 2002-08-01 |
DE3539208A1 (en) | 1986-05-15 |
KR860004472A (en) | 1986-06-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |