GB8518801D0 - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB8518801D0
GB8518801D0 GB858518801A GB8518801A GB8518801D0 GB 8518801 D0 GB8518801 D0 GB 8518801D0 GB 858518801 A GB858518801 A GB 858518801A GB 8518801 A GB8518801 A GB 8518801A GB 8518801 D0 GB8518801 D0 GB 8518801D0
Authority
GB
United Kingdom
Prior art keywords
semiconductor devices
semiconductor
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB858518801A
Other versions
GB2163597A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
ATES Componenti Elettronici SpA
SGS ATES Componenti Elettronici SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ATES Componenti Elettronici SpA, SGS ATES Componenti Elettronici SpA filed Critical ATES Componenti Elettronici SpA
Publication of GB8518801D0 publication Critical patent/GB8518801D0/en
Publication of GB2163597A publication Critical patent/GB2163597A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/01—Bipolar transistors-ion implantation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/965—Shaped junction formation
GB08518801A 1984-08-21 1985-07-25 Improvements in or relating to manufacture of semiconductor devices of high breakdown voltage Withdrawn GB2163597A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8406616A IT1214805B (en) 1984-08-21 1984-08-21 SEMICONDUCTOR WITH JUNPROCESS DEVICES FOR THE MANUFACTURE OF VARIABLE CHARGE CONCENTRATION PLANAR DIRECTIONS AND VERY HIGH BREAKDOWN VOLTAGE

Publications (2)

Publication Number Publication Date
GB8518801D0 true GB8518801D0 (en) 1985-08-29
GB2163597A GB2163597A (en) 1986-02-26

Family

ID=11121466

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08518801A Withdrawn GB2163597A (en) 1984-08-21 1985-07-25 Improvements in or relating to manufacture of semiconductor devices of high breakdown voltage

Country Status (5)

Country Link
US (1) US4667393A (en)
JP (1) JPH0793312B2 (en)
FR (1) FR2569495A1 (en)
GB (1) GB2163597A (en)
IT (1) IT1214805B (en)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0262356B1 (en) * 1986-09-30 1993-03-31 Siemens Aktiengesellschaft Process for manufacturing a high-voltage resistant pn junction
IT1215024B (en) * 1986-10-01 1990-01-31 Sgs Microelettronica Spa PROCESS FOR THE FORMATION OF A HIGH VOLTAGE SEMICONDUCTOR MONOLITHIC DEVICE
IT1221587B (en) * 1987-09-07 1990-07-12 S G S Microelettronics Spa MANUFACTURING PROCEDURE OF AN INTEGRATED MONOLITHIC SEMICONDUCTOR DEVICE WITH LOW IMPURITY CONCENTRATION EPITAS LAYERS
IT1217323B (en) * 1987-12-22 1990-03-22 Sgs Microelettronica Spa INTEGRATED STRUCTURE OF HIGH VOLTAGE BIPOLAR POWER TRANSISTOR AND LOW VOLTAGE POWER MOS TRANSISTOR IN THE "EMITTER SWITCHING" CONFIGURATION AND RELATED MANUFACTURING PROCESS
USRE35642E (en) * 1987-12-22 1997-10-28 Sgs-Thomson Microelectronics, S.R.L. Integrated high-voltage bipolar power transistor and low voltage MOS power transistor structure in the emitter switching configuration and relative manufacturing process
US5011784A (en) * 1988-01-21 1991-04-30 Exar Corporation Method of making a complementary BiCMOS process with isolated vertical PNP transistors
US4999684A (en) * 1988-05-06 1991-03-12 General Electric Company Symmetrical blocking high voltage breakdown semiconducotr device
US4927772A (en) * 1989-05-30 1990-05-22 General Electric Company Method of making high breakdown voltage semiconductor device
US5246871A (en) * 1989-06-16 1993-09-21 Sgs-Thomson Microelectronics S.R.L. Method of manufacturing a semiconductor device comprising a control circuit and a power stage with a vertical current flow, integrated in monolithic form on a single chip
CA2120261A1 (en) * 1991-10-23 1993-04-29 James A. Matthews Bipolar junction transistor exhibiting improved beta and punch-through characteristics
DE69324003T2 (en) * 1993-06-28 1999-07-15 Cons Ric Microelettronica Bipolar power transistor with high collector breakdown voltage and method for its production
EP0632503B1 (en) * 1993-07-01 2001-10-31 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Integrated edge structure for high voltage semiconductor devices and related manufacturing process
US5448104A (en) * 1993-07-17 1995-09-05 Analog Devices, Inc. Bipolar transistor with base charge controlled by back gate bias
US5426325A (en) * 1993-08-04 1995-06-20 Siliconix Incorporated Metal crossover in high voltage IC with graduated doping control
US5633180A (en) * 1995-06-01 1997-05-27 Harris Corporation Method of forming P-type islands over P-type buried layer
US5869371A (en) * 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices
EP0757382B1 (en) 1995-07-31 2005-09-28 STMicroelectronics S.r.l. High voltage semiconductor monolithic device with integrated edge structure and corresponding manufacturing process
US5967795A (en) * 1995-08-30 1999-10-19 Asea Brown Boveri Ab SiC semiconductor device comprising a pn junction with a voltage absorbing edge
US6002159A (en) * 1996-07-16 1999-12-14 Abb Research Ltd. SiC semiconductor device comprising a pn junction with a voltage absorbing edge
SE9700156D0 (en) * 1997-01-21 1997-01-21 Abb Research Ltd Junction termination for Si C Schottky diode
KR100248115B1 (en) * 1997-05-20 2000-03-15 김덕중 Power semiconductor device with field plate and the manufacturing method thereof
US5930660A (en) * 1997-10-17 1999-07-27 General Semiconductor, Inc. Method for fabricating diode with improved reverse energy characteristics
DE19816448C1 (en) 1998-04-14 1999-09-30 Siemens Ag Universal semiconductor wafer for high-voltage semiconductor components, their manufacturing process and their use
DE69833743T2 (en) 1998-12-09 2006-11-09 Stmicroelectronics S.R.L., Agrate Brianza Manufacturing method of an integrated edge structure for high voltage semiconductor devices
JP2000252456A (en) * 1999-03-02 2000-09-14 Hitachi Ltd Semiconductor device and power converter using the same
US6215168B1 (en) 1999-07-21 2001-04-10 Intersil Corporation Doubly graded junction termination extension for edge passivation of semiconductor devices
KR100485297B1 (en) 2001-02-21 2005-04-27 미쓰비시덴키 가부시키가이샤 Semiconductor device and method of manufacturing the same
US7033950B2 (en) * 2001-12-19 2006-04-25 Auburn University Graded junction termination extensions for electronic devices
EP1635397A1 (en) * 2004-09-14 2006-03-15 STMicroelectronics S.r.l. Integrated high voltage power device having an edge termination of enhanced effectiveness
DE102005004355B4 (en) * 2005-01-31 2008-12-18 Infineon Technologies Ag Semiconductor device and method for its production
US7541660B2 (en) * 2006-04-20 2009-06-02 Infineon Technologies Austria Ag Power semiconductor device
US8106487B2 (en) 2008-12-23 2012-01-31 Pratt & Whitney Rocketdyne, Inc. Semiconductor device having an inorganic coating layer applied over a junction termination extension
CN103460386B (en) 2011-04-05 2016-06-22 三菱电机株式会社 Semiconductor device and manufacture method thereof
US20220157951A1 (en) * 2020-11-17 2022-05-19 Hamza Yilmaz High voltage edge termination structure for power semicondcutor devices and manufacturing method thereof

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1073560A (en) * 1964-12-28 1967-06-28 Gen Electric Improvements in semiconductor devices
US3551760A (en) * 1966-03-28 1970-12-29 Hitachi Ltd Semiconductor device with an inversion preventing layer formed in a diffused region
DE1764908B2 (en) * 1968-08-31 1972-03-30 Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm METHOD OF MANUFACTURING A SEMICONDUCTOR ARRANGEMENT
US3697829A (en) * 1968-12-30 1972-10-10 Gen Electric Semiconductor devices with improved voltage breakdown characteristics
CA932072A (en) * 1970-12-23 1973-08-14 J. Kannam Peter High frequency planar transistor employing highly resistive guard ring
IN144488B (en) * 1974-02-11 1978-05-06 Rca Corp
US4099998A (en) * 1975-11-03 1978-07-11 General Electric Company Method of making zener diodes with selectively variable breakdown voltages
US3997367A (en) * 1975-11-20 1976-12-14 Bell Telephone Laboratories, Incorporated Method for making transistors
DE2619663C3 (en) * 1976-05-04 1982-07-22 Siemens AG, 1000 Berlin und 8000 München Field effect transistor, method of its operation and use as a high-speed switch and in an integrated circuit
JPS5368581A (en) * 1976-12-01 1978-06-19 Hitachi Ltd Semiconductor device
DE2706623A1 (en) * 1977-02-16 1978-08-17 Siemens Ag MIS-FET FOR HIGH SOURCE DRAIN VOLTAGES
JPS53118982A (en) * 1977-03-28 1978-10-17 Seiko Instr & Electronics Ltd Electrostatic induction transistor logic element
US4198250A (en) * 1979-02-05 1980-04-15 Intel Corporation Shadow masking process for forming source and drain regions for field-effect transistors and like regions
US4393575A (en) * 1979-03-09 1983-07-19 National Semiconductor Corporation Process for manufacturing a JFET with an ion implanted stabilization layer
US4356623A (en) * 1980-09-15 1982-11-02 Texas Instruments Incorporated Fabrication of submicron semiconductor devices
DE3219888A1 (en) * 1982-05-27 1983-12-01 Deutsche Itt Industries Gmbh, 7800 Freiburg PLANAR SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING IT
US4443931A (en) * 1982-06-28 1984-04-24 General Electric Company Method of fabricating a semiconductor device with a base region having a deep portion
US4473941A (en) * 1982-12-22 1984-10-02 Ncr Corporation Method of fabricating zener diodes
GB2134705B (en) * 1983-01-28 1985-12-24 Philips Electronic Associated Semiconductor devices
US4551909A (en) * 1984-03-29 1985-11-12 Gte Laboratories Incorporated Method of fabricating junction field effect transistors
IT1202311B (en) * 1985-12-11 1989-02-02 Sgs Microelettronica Spa SEMICONDUCTOR DEVICE WITH A FLAT JUNCTION WITH SELF-PASSIVATING TERMINATION

Also Published As

Publication number Publication date
IT8406616A0 (en) 1984-08-21
JPH0793312B2 (en) 1995-10-09
GB2163597A (en) 1986-02-26
US4667393A (en) 1987-05-26
JPS6159868A (en) 1986-03-27
IT1214805B (en) 1990-01-18
FR2569495A1 (en) 1986-02-28

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)