AU572005B2 - Semiconductor device with npn and pnp transistors - Google Patents
Semiconductor device with npn and pnp transistorsInfo
- Publication number
- AU572005B2 AU572005B2 AU49315/85A AU4931585A AU572005B2 AU 572005 B2 AU572005 B2 AU 572005B2 AU 49315/85 A AU49315/85 A AU 49315/85A AU 4931585 A AU4931585 A AU 4931585A AU 572005 B2 AU572005 B2 AU 572005B2
- Authority
- AU
- Australia
- Prior art keywords
- npn
- semiconductor device
- pnp transistors
- pnp
- transistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0826—Combination of vertical complementary transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
- H01L21/8224—Bipolar technology comprising a combination of vertical and lateral transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0821—Combination of lateral and vertical transistors only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59-232870 | 1984-11-05 | ||
JP59232870A JPH0638476B2 (en) | 1984-11-05 | 1984-11-05 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
AU4931585A AU4931585A (en) | 1986-05-15 |
AU572005B2 true AU572005B2 (en) | 1988-04-28 |
Family
ID=16946115
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU49315/85A Expired AU572005B2 (en) | 1984-11-05 | 1985-11-04 | Semiconductor device with npn and pnp transistors |
Country Status (10)
Country | Link |
---|---|
JP (1) | JPH0638476B2 (en) |
KR (1) | KR940005447B1 (en) |
CN (1) | CN1004845B (en) |
AT (1) | AT395272B (en) |
AU (1) | AU572005B2 (en) |
CA (1) | CA1254671A (en) |
DE (1) | DE3539208C2 (en) |
FR (1) | FR2572850B1 (en) |
GB (1) | GB2167231B (en) |
NL (1) | NL194711C (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6768183B2 (en) * | 2001-04-20 | 2004-07-27 | Denso Corporation | Semiconductor device having bipolar transistors |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1520515A (en) * | 1967-02-07 | 1968-04-12 | Radiotechnique Coprim Rtc | Integrated circuits incorporating transistors of opposite types and methods of making them |
JPS5710964A (en) * | 1980-06-25 | 1982-01-20 | Fujitsu Ltd | Manufacture of semiconductor device |
EP0093304B1 (en) * | 1982-04-19 | 1986-01-15 | Matsushita Electric Industrial Co., Ltd. | Semiconductor ic and method of making the same |
JPS58212159A (en) * | 1982-06-02 | 1983-12-09 | Matsushita Electric Ind Co Ltd | Semiconductor integrated circuit device |
-
1984
- 1984-11-05 JP JP59232870A patent/JPH0638476B2/en not_active Expired - Lifetime
-
1985
- 1985-10-15 KR KR1019850007581A patent/KR940005447B1/en not_active IP Right Cessation
- 1985-10-28 CA CA000493970A patent/CA1254671A/en not_active Expired
- 1985-10-30 GB GB08526749A patent/GB2167231B/en not_active Expired
- 1985-11-02 CN CN85108134.7A patent/CN1004845B/en not_active Expired
- 1985-11-04 AU AU49315/85A patent/AU572005B2/en not_active Expired
- 1985-11-05 DE DE3539208A patent/DE3539208C2/en not_active Expired - Fee Related
- 1985-11-05 AT AT0318985A patent/AT395272B/en not_active IP Right Cessation
- 1985-11-05 NL NL8503033A patent/NL194711C/en not_active IP Right Cessation
- 1985-11-05 FR FR8516362A patent/FR2572850B1/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
ATA318985A (en) | 1992-03-15 |
JPS61111575A (en) | 1986-05-29 |
NL194711B (en) | 2002-08-01 |
JPH0638476B2 (en) | 1994-05-18 |
NL8503033A (en) | 1986-06-02 |
DE3539208A1 (en) | 1986-05-15 |
CN1004845B (en) | 1989-07-19 |
CA1254671A (en) | 1989-05-23 |
FR2572850A1 (en) | 1986-05-09 |
DE3539208C2 (en) | 1998-04-09 |
GB2167231A (en) | 1986-05-21 |
AU4931585A (en) | 1986-05-15 |
GB2167231B (en) | 1988-03-02 |
GB8526749D0 (en) | 1985-12-04 |
KR940005447B1 (en) | 1994-06-18 |
KR860004472A (en) | 1986-06-23 |
NL194711C (en) | 2002-12-03 |
CN85108134A (en) | 1986-07-02 |
FR2572850B1 (en) | 1988-09-09 |
AT395272B (en) | 1992-11-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3466832D1 (en) | Method for fabricating vertical npn and lateral pnp transistors in the same semiconductor body | |
AU6596690A (en) | Semiconductor device | |
EP0189136A3 (en) | Bipolar semiconductor device and method of manufacturing the same | |
GB2198285B (en) | Bipolar transistor and method of manufacturing the same | |
EP0188291A3 (en) | Bipolar semiconductor device and method of manufacturing the same | |
EP0558100A3 (en) | Bipolar transistor | |
EP0297886A3 (en) | Heterojunction bipolar transistor | |
GB2171250B (en) | Heterojunction field effect transistors | |
KR900008651B1 (en) | Bipolar transistor and the manufacturing method | |
AU6929887A (en) | Semiconductor device | |
EP0313749A3 (en) | Heterojunction bipolar transistor | |
EP0206787A3 (en) | Heterojunction bipolar transistor and method of manufacturing same | |
DE3564518D1 (en) | Heterojunction bipolar transistor and method of manufacturing the same | |
GB8518841D0 (en) | Static induction transistor & integrated circuit | |
EP0278386A3 (en) | Heterojunction bipolar transistor | |
EP0193172A3 (en) | Vertical mos transistor with peripheral circuit | |
GB2168845B (en) | Bipolar transistor integrated circuit and method of manufacturing the same | |
KR930004721B1 (en) | Hetero junction bipolar transistor and its manufacturing method | |
GB2163002B (en) | Tunnel injection static induction transistor and its integrated circuit | |
EP0237933A3 (en) | Semiconductor device having darlington-connected transistor circuit | |
GB8406696D0 (en) | Amplifier with bipolar transistors | |
EP0335720A3 (en) | Bipolar transistor device and method of manufacturing the same | |
AU578093B2 (en) | Monolithic integrated planar semi-conductor device | |
AU572005B2 (en) | Semiconductor device with npn and pnp transistors | |
EP0343879A3 (en) | Bipolar transistor |