FR2541514B1 - Condensateur variable - Google Patents

Condensateur variable

Info

Publication number
FR2541514B1
FR2541514B1 FR8402687A FR8402687A FR2541514B1 FR 2541514 B1 FR2541514 B1 FR 2541514B1 FR 8402687 A FR8402687 A FR 8402687A FR 8402687 A FR8402687 A FR 8402687A FR 2541514 B1 FR2541514 B1 FR 2541514B1
Authority
FR
France
Prior art keywords
variable capacitor
capacitor
variable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8402687A
Other languages
English (en)
Other versions
FR2541514A1 (fr
Inventor
Takamasa Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Faurecia Clarion Electronics Co Ltd
Original Assignee
Clarion Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clarion Co Ltd filed Critical Clarion Co Ltd
Publication of FR2541514A1 publication Critical patent/FR2541514A1/fr
Application granted granted Critical
Publication of FR2541514B1 publication Critical patent/FR2541514B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors with potential-jump barrier or surface barrier
    • H01L29/93—Variable capacitance diodes, e.g. varactors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors with potential-jump barrier or surface barrier
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR8402687A 1983-02-23 1984-02-22 Condensateur variable Expired FR2541514B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2774883A JPS59154077A (ja) 1983-02-23 1983-02-23 可変容量素子

Publications (2)

Publication Number Publication Date
FR2541514A1 FR2541514A1 (fr) 1984-08-24
FR2541514B1 true FR2541514B1 (fr) 1987-07-10

Family

ID=12229648

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8402687A Expired FR2541514B1 (fr) 1983-02-23 1984-02-22 Condensateur variable

Country Status (4)

Country Link
JP (1) JPS59154077A (fr)
DE (1) DE3406437A1 (fr)
FR (1) FR2541514B1 (fr)
GB (1) GB2138206B (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0902483B1 (fr) * 1997-09-11 2008-11-12 Telefonaktiebolaget LM Ericsson (publ) Dispositif électrique comprenant une capacité de la tension et procédé de fabrication
SE515783C2 (sv) * 1997-09-11 2001-10-08 Ericsson Telefon Ab L M Elektriska anordningar jämte förfarande för deras tillverkning
US6828638B2 (en) * 1999-12-22 2004-12-07 Intel Corporation Decoupling capacitors for thin gate oxides
DE10126328A1 (de) * 2001-05-30 2002-12-12 Infineon Technologies Ag Integrierte, abstimmbare Kapazität
DE10339703B4 (de) * 2003-08-28 2006-08-10 Infineon Technologies Ag Schaltungsanordnung für einen hochauflösenden digital steuerbaren Schwingkreis
US9660110B2 (en) 2014-09-26 2017-05-23 Qualcomm Incorporated Varactor device with backside contact

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1514431C3 (de) * 1965-04-07 1974-08-22 Siemens Ag, 1000 Berlin Und 8000 Muenchen Halbleiteranordnung mit pn-Übergang zur Verwendung als spannungsabhängige Kapazität
US3456166A (en) * 1967-05-11 1969-07-15 Teledyne Inc Junction capacitor
US3535600A (en) * 1968-10-10 1970-10-20 Gen Electric Mos varactor diode
DE1803883A1 (de) * 1968-10-18 1970-05-27 Siemens Ag Durch mindestens zwei abstimmbare Kapazitaetsdioden gesteuerte elektrische Anordnung
US3591836A (en) * 1969-03-04 1971-07-06 North American Rockwell Field effect conditionally switched capacitor
US3756958A (en) * 1972-04-12 1973-09-04 Du Pont Process for increasing size of silica particles in aqueous silica sol
IT1039154B (it) * 1974-08-12 1979-12-10 Ibm Miglioramento a processi di fabricazione di dispositivi impieganti semiconduttori particolarmente strutture mos
NL7609587A (nl) * 1975-09-08 1977-03-10 Ncr Co Elektrisch afstembare mnos-capaciteit.
FR2326761A1 (fr) * 1975-09-30 1977-04-29 Siemens Ag Memoire d'informations pour la memorisation d'informations sous forme de porteurs de charge electriques et procede pour sa mise en oeuvre
JPS5599765A (en) * 1979-01-25 1980-07-30 Nec Corp Mos memory device
GB2060250B (en) * 1979-03-12 1983-12-14 Clarion Co Ltd Controllable semiconductor capacitors
JPS5799787A (en) * 1980-12-12 1982-06-21 Clarion Co Ltd Variable capacitance device
JPS57103366A (en) * 1980-12-18 1982-06-26 Clarion Co Ltd Variable-capacitance device
JPS57103367A (en) * 1980-12-18 1982-06-26 Clarion Co Ltd Variable-capacitance device
GB2104725B (en) * 1981-07-17 1986-04-09 Clarion Co Ltd Variable capacitance device

Also Published As

Publication number Publication date
FR2541514A1 (fr) 1984-08-24
GB8404567D0 (en) 1984-03-28
GB2138206A (en) 1984-10-17
DE3406437A1 (de) 1984-08-23
GB2138206B (en) 1987-01-14
JPS59154077A (ja) 1984-09-03

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Legal Events

Date Code Title Description
ST Notification of lapse