GB2138206B - Variable capacitor element - Google Patents

Variable capacitor element

Info

Publication number
GB2138206B
GB2138206B GB08404567A GB8404567A GB2138206B GB 2138206 B GB2138206 B GB 2138206B GB 08404567 A GB08404567 A GB 08404567A GB 8404567 A GB8404567 A GB 8404567A GB 2138206 B GB2138206 B GB 2138206B
Authority
GB
United Kingdom
Prior art keywords
capacitor element
variable capacitor
variable
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08404567A
Other versions
GB8404567D0 (en
GB2138206A (en
Inventor
Takamasa Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Faurecia Clarion Electronics Co Ltd
Original Assignee
Clarion Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clarion Co Ltd filed Critical Clarion Co Ltd
Publication of GB8404567D0 publication Critical patent/GB8404567D0/en
Publication of GB2138206A publication Critical patent/GB2138206A/en
Application granted granted Critical
Publication of GB2138206B publication Critical patent/GB2138206B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors with potential-jump barrier or surface barrier
    • H01L29/93—Variable capacitance diodes, e.g. varactors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors with potential-jump barrier or surface barrier
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
GB08404567A 1983-02-23 1984-02-21 Variable capacitor element Expired GB2138206B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2774883A JPS59154077A (en) 1983-02-23 1983-02-23 Variable capacitance element

Publications (3)

Publication Number Publication Date
GB8404567D0 GB8404567D0 (en) 1984-03-28
GB2138206A GB2138206A (en) 1984-10-17
GB2138206B true GB2138206B (en) 1987-01-14

Family

ID=12229648

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08404567A Expired GB2138206B (en) 1983-02-23 1984-02-21 Variable capacitor element

Country Status (4)

Country Link
JP (1) JPS59154077A (en)
DE (1) DE3406437A1 (en)
FR (1) FR2541514B1 (en)
GB (1) GB2138206B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0902483B1 (en) * 1997-09-11 2008-11-12 Telefonaktiebolaget LM Ericsson (publ) Electrical device comprising a voltage dependant capacitance and method of manufacturing the same
SE515783C2 (en) * 1997-09-11 2001-10-08 Ericsson Telefon Ab L M Electrical devices and process for their manufacture
US6828638B2 (en) * 1999-12-22 2004-12-07 Intel Corporation Decoupling capacitors for thin gate oxides
DE10126328A1 (en) * 2001-05-30 2002-12-12 Infineon Technologies Ag Integrated, tunable capacity
DE10339703B4 (en) * 2003-08-28 2006-08-10 Infineon Technologies Ag Circuit arrangement for a high-resolution digitally controllable resonant circuit
US9660110B2 (en) 2014-09-26 2017-05-23 Qualcomm Incorporated Varactor device with backside contact

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1514431C3 (en) * 1965-04-07 1974-08-22 Siemens Ag, 1000 Berlin Und 8000 Muenchen Semiconductor arrangement with pn junction for use as a voltage-dependent capacitance
US3456166A (en) * 1967-05-11 1969-07-15 Teledyne Inc Junction capacitor
US3535600A (en) * 1968-10-10 1970-10-20 Gen Electric Mos varactor diode
DE1803883A1 (en) * 1968-10-18 1970-05-27 Siemens Ag Electrical arrangement controlled by at least two tunable capacitance diodes
US3591836A (en) * 1969-03-04 1971-07-06 North American Rockwell Field effect conditionally switched capacitor
US3756958A (en) * 1972-04-12 1973-09-04 Du Pont Process for increasing size of silica particles in aqueous silica sol
IT1039154B (en) * 1974-08-12 1979-12-10 Ibm IMPROVEMENT IN MANUFACTURING PROCESSES OF DEVICES USING SEMICONDUCTOR PARTICULARLY MOS STRUCTURES
NL7609587A (en) * 1975-09-08 1977-03-10 Ncr Co ELECTRICALLY TUNABLE MNOS CAPACITY.
FR2326761A1 (en) * 1975-09-30 1977-04-29 Siemens Ag MEMORY OF INFORMATION FOR STORING INFORMATION IN THE FORM OF ELECTRIC CHARGERS AND PROCESS FOR ITS IMPLEMENTATION
JPS5599765A (en) * 1979-01-25 1980-07-30 Nec Corp Mos memory device
GB2060250B (en) * 1979-03-12 1983-12-14 Clarion Co Ltd Controllable semiconductor capacitors
JPS5799787A (en) * 1980-12-12 1982-06-21 Clarion Co Ltd Variable capacitance device
JPS57103366A (en) * 1980-12-18 1982-06-26 Clarion Co Ltd Variable-capacitance device
JPS57103367A (en) * 1980-12-18 1982-06-26 Clarion Co Ltd Variable-capacitance device
GB2104725B (en) * 1981-07-17 1986-04-09 Clarion Co Ltd Variable capacitance device

Also Published As

Publication number Publication date
FR2541514A1 (en) 1984-08-24
GB8404567D0 (en) 1984-03-28
FR2541514B1 (en) 1987-07-10
GB2138206A (en) 1984-10-17
DE3406437A1 (en) 1984-08-23
JPS59154077A (en) 1984-09-03

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19930221