FR2538923A1 - Procede et dispositif d'alignement optique de motifs dans deux plans rapproches dans un appareil d'exposition comprenant une source de rayonnement divergent - Google Patents
Procede et dispositif d'alignement optique de motifs dans deux plans rapproches dans un appareil d'exposition comprenant une source de rayonnement divergent Download PDFInfo
- Publication number
- FR2538923A1 FR2538923A1 FR8222080A FR8222080A FR2538923A1 FR 2538923 A1 FR2538923 A1 FR 2538923A1 FR 8222080 A FR8222080 A FR 8222080A FR 8222080 A FR8222080 A FR 8222080A FR 2538923 A1 FR2538923 A1 FR 2538923A1
- Authority
- FR
- France
- Prior art keywords
- alignment
- mask
- plane
- patterns
- axes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005855 radiation Effects 0.000 title claims description 51
- 238000000034 method Methods 0.000 title claims description 41
- 238000012937 correction Methods 0.000 claims description 18
- 238000006073 displacement reaction Methods 0.000 claims description 12
- 230000003287 optical effect Effects 0.000 claims description 12
- 238000012545 processing Methods 0.000 claims description 11
- 238000012546 transfer Methods 0.000 claims description 11
- 239000003550 marker Substances 0.000 claims description 10
- 238000005286 illumination Methods 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 8
- 230000005693 optoelectronics Effects 0.000 claims description 6
- 238000001514 detection method Methods 0.000 claims description 5
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 238000003780 insertion Methods 0.000 claims description 2
- 230000037431 insertion Effects 0.000 claims description 2
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 abstract description 40
- 238000001393 microlithography Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 32
- 238000011156 evaluation Methods 0.000 description 11
- 230000005540 biological transmission Effects 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000003795 chemical substances by application Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 206010073306 Exposure to radiation Diseases 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 2
- 239000002250 absorbent Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000009966 trimming Methods 0.000 description 2
- NCGICGYLBXGBGN-UHFFFAOYSA-N 3-morpholin-4-yl-1-oxa-3-azonia-2-azanidacyclopent-3-en-5-imine;hydrochloride Chemical group Cl.[N-]1OC(=N)C=[N+]1N1CCOCC1 NCGICGYLBXGBGN-UHFFFAOYSA-N 0.000 description 1
- 238000012935 Averaging Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000002146 bilateral effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000023077 detection of light stimulus Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 235000013305 food Nutrition 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- CPBQJMYROZQQJC-UHFFFAOYSA-N helium neon Chemical compound [He].[Ne] CPBQJMYROZQQJC-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
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- 238000010884 ion-beam technique Methods 0.000 description 1
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- 230000004304 visual acuity Effects 0.000 description 1
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7049—Technique, e.g. interferometric
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8222080A FR2538923A1 (fr) | 1982-12-30 | 1982-12-30 | Procede et dispositif d'alignement optique de motifs dans deux plans rapproches dans un appareil d'exposition comprenant une source de rayonnement divergent |
| JP58244350A JPS59134830A (ja) | 1982-12-30 | 1983-12-26 | ２つのクロ−ズアツプ平面上のパタ−ンの光学的配列方法およびその装置 |
| EP83402543A EP0113633B1 (fr) | 1982-12-30 | 1983-12-27 | Procédé et dispositif d'alignement optique de motifs dans deux plans rapprochés dans un appareil d'exposition comprenant une source de rayonnement divergent |
| US06/565,814 US4600309A (en) | 1982-12-30 | 1983-12-27 | Process and apparatus for theoptical alignment of patterns in two close-up planes in an exposure means incorporating a divergent radiation source |
| DE8383402543T DE3370199D1 (en) | 1982-12-30 | 1983-12-27 | Method and device for the optical alignment of motives in close planes in an exposing apparatus provided with a diverging radiation source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8222080A FR2538923A1 (fr) | 1982-12-30 | 1982-12-30 | Procede et dispositif d'alignement optique de motifs dans deux plans rapproches dans un appareil d'exposition comprenant une source de rayonnement divergent |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2538923A1 true FR2538923A1 (fr) | 1984-07-06 |
| FR2538923B1 FR2538923B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1985-03-08 |
Family
ID=9280689
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8222080A Granted FR2538923A1 (fr) | 1982-12-30 | 1982-12-30 | Procede et dispositif d'alignement optique de motifs dans deux plans rapproches dans un appareil d'exposition comprenant une source de rayonnement divergent |
Country Status (5)
Families Citing this family (73)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63131008A (ja) * | 1986-11-20 | 1988-06-03 | Fujitsu Ltd | 光学的アライメント方法 |
| JPH01285803A (ja) * | 1988-05-13 | 1989-11-16 | Fujitsu Ltd | フレネル・ゾーン・プレートおよびそれを用いる位置合せ方法 |
| US5319444A (en) * | 1988-02-16 | 1994-06-07 | Canon Kabushiki Kaisha | Position detecting method and apparatus |
| JPH01283993A (ja) * | 1988-05-11 | 1989-11-15 | Hitachi Ltd | 回路プリント板、その面付け部品位置認識装置、及び面付け部品検査装置 |
| EP0355496A3 (en) * | 1988-08-15 | 1990-10-10 | Sumitomo Heavy Industries Co., Ltd. | Position detector employing a sector fresnel zone plate |
| JPH0267903A (ja) * | 1988-09-02 | 1990-03-07 | Canon Inc | 光量調節装置 |
| JPH07119574B2 (ja) * | 1988-09-12 | 1995-12-20 | 富士通株式会社 | 二次元位置検出方法 |
| JP2666859B2 (ja) * | 1988-11-25 | 1997-10-22 | 日本電気株式会社 | 目合せ用バーニヤパターンを備えた半導体装置 |
| JP2704002B2 (ja) * | 1989-07-18 | 1998-01-26 | キヤノン株式会社 | 位置検出方法 |
| US5229617A (en) * | 1989-07-28 | 1993-07-20 | Canon Kabushiki Kaisha | Position detecting method having reflectively scattered light prevented from impinging on a detector |
| DE4006365A1 (de) * | 1990-03-01 | 1991-10-17 | Heidenhain Gmbh Dr Johannes | Positionsmesseinrichtung |
| JPH10166460A (ja) * | 1996-12-06 | 1998-06-23 | Toyota Motor Corp | 積層造形方法及び積層造形装置 |
| CA2227672A1 (en) * | 1997-01-29 | 1998-07-29 | Toyota Jidosha Kabushiki Kaisha | Method for producing a laminated object and apparatus for producing the same |
| JPH11233397A (ja) * | 1998-02-13 | 1999-08-27 | Mitsubishi Electric Corp | アライメント方法及び半導体装置 |
| US6136517A (en) * | 1998-03-06 | 2000-10-24 | Raytheon Company | Method for photo composition of large area integrated circuits |
| US6592673B2 (en) * | 1999-05-27 | 2003-07-15 | Applied Materials, Inc. | Apparatus and method for detecting a presence or position of a substrate |
| US6301798B1 (en) * | 1999-06-09 | 2001-10-16 | United Microelectronics Corp. | Method of measuring misalignment |
| US6873087B1 (en) * | 1999-10-29 | 2005-03-29 | Board Of Regents, The University Of Texas System | High precision orientation alignment and gap control stages for imprint lithography processes |
| CN100504598C (zh) * | 2000-07-16 | 2009-06-24 | 得克萨斯州大学系统董事会 | 用于平版印刷工艺中的高分辨率重叠对齐方法和系统 |
| JP4740518B2 (ja) | 2000-07-17 | 2011-08-03 | ボード・オブ・リージエンツ，ザ・ユニバーシテイ・オブ・テキサス・システム | 転写リソグラフィ・プロセスのための自動液体ディスペンス方法およびシステム |
| EP1309897A2 (en) * | 2000-08-01 | 2003-05-14 | Board Of Regents, The University Of Texas System | Methods for high-precision gap and orientation sensing between a transparent template and substrate for imprint lithography |
| EP1390975A2 (en) | 2000-08-21 | 2004-02-25 | The Board Of Regents, The University Of Texas System | Flexure based translation stage |
| CN100365507C (zh) * | 2000-10-12 | 2008-01-30 | 德克萨斯州大学系统董事会 | 用于室温下低压微刻痕和毫微刻痕光刻的模板 |
| US6964793B2 (en) | 2002-05-16 | 2005-11-15 | Board Of Regents, The University Of Texas System | Method for fabricating nanoscale patterns in light curable compositions using an electric field |
| US20050064344A1 (en) * | 2003-09-18 | 2005-03-24 | University Of Texas System Board Of Regents | Imprint lithography templates having alignment marks |
| JP3953355B2 (ja) * | 2002-04-12 | 2007-08-08 | Ｎｅｃエレクトロニクス株式会社 | 画像処理アライメント方法及び半導体装置の製造方法 |
| US7037639B2 (en) * | 2002-05-01 | 2006-05-02 | Molecular Imprints, Inc. | Methods of manufacturing a lithography template |
| US20030235787A1 (en) * | 2002-06-24 | 2003-12-25 | Watts Michael P.C. | Low viscosity high resolution patterning material |
| US6926929B2 (en) | 2002-07-09 | 2005-08-09 | Molecular Imprints, Inc. | System and method for dispensing liquids |
| US7077992B2 (en) | 2002-07-11 | 2006-07-18 | Molecular Imprints, Inc. | Step and repeat imprint lithography processes |
| US6900881B2 (en) | 2002-07-11 | 2005-05-31 | Molecular Imprints, Inc. | Step and repeat imprint lithography systems |
| US6908861B2 (en) * | 2002-07-11 | 2005-06-21 | Molecular Imprints, Inc. | Method for imprint lithography using an electric field |
| US6932934B2 (en) | 2002-07-11 | 2005-08-23 | Molecular Imprints, Inc. | Formation of discontinuous films during an imprint lithography process |
| US7019819B2 (en) | 2002-11-13 | 2006-03-28 | Molecular Imprints, Inc. | Chucking system for modulating shapes of substrates |
| US6916584B2 (en) | 2002-08-01 | 2005-07-12 | Molecular Imprints, Inc. | Alignment methods for imprint lithography |
| US7027156B2 (en) * | 2002-08-01 | 2006-04-11 | Molecular Imprints, Inc. | Scatterometry alignment for imprint lithography |
| US7070405B2 (en) * | 2002-08-01 | 2006-07-04 | Molecular Imprints, Inc. | Alignment systems for imprint lithography |
| US7071088B2 (en) | 2002-08-23 | 2006-07-04 | Molecular Imprints, Inc. | Method for fabricating bulbous-shaped vias |
| US8349241B2 (en) | 2002-10-04 | 2013-01-08 | Molecular Imprints, Inc. | Method to arrange features on a substrate to replicate features having minimal dimensional variability |
| US6929762B2 (en) | 2002-11-13 | 2005-08-16 | Molecular Imprints, Inc. | Method of reducing pattern distortions during imprint lithography processes |
| US6980282B2 (en) * | 2002-12-11 | 2005-12-27 | Molecular Imprints, Inc. | Method for modulating shapes of substrates |
| US6871558B2 (en) * | 2002-12-12 | 2005-03-29 | Molecular Imprints, Inc. | Method for determining characteristics of substrate employing fluid geometries |
| JP4563181B2 (ja) * | 2002-12-13 | 2010-10-13 | モレキュラー・インプリンツ・インコーポレーテッド | 基板の面曲がりを使用する倍率補正 |
| JP3785141B2 (ja) * | 2002-12-27 | 2006-06-14 | 株式会社東芝 | 荷電粒子ビーム描画装置の縮小率測定方法、荷電粒子ビーム描画装置のステージ位相測定方法、荷電粒子ビーム描画装置の制御方法、及び荷電粒子ビーム描画装置 |
| US7452574B2 (en) | 2003-02-27 | 2008-11-18 | Molecular Imprints, Inc. | Method to reduce adhesion between a polymerizable layer and a substrate employing a fluorine-containing layer |
| US7179396B2 (en) | 2003-03-25 | 2007-02-20 | Molecular Imprints, Inc. | Positive tone bi-layer imprint lithography method |
| US7122079B2 (en) | 2004-02-27 | 2006-10-17 | Molecular Imprints, Inc. | Composition for an etching mask comprising a silicon-containing material |
| US7396475B2 (en) * | 2003-04-25 | 2008-07-08 | Molecular Imprints, Inc. | Method of forming stepped structures employing imprint lithography |
| US7157036B2 (en) | 2003-06-17 | 2007-01-02 | Molecular Imprints, Inc | Method to reduce adhesion between a conformable region and a pattern of a mold |
| US7150622B2 (en) * | 2003-07-09 | 2006-12-19 | Molecular Imprints, Inc. | Systems for magnification and distortion correction for imprint lithography processes |
| US7136150B2 (en) | 2003-09-25 | 2006-11-14 | Molecular Imprints, Inc. | Imprint lithography template having opaque alignment marks |
| US7090716B2 (en) * | 2003-10-02 | 2006-08-15 | Molecular Imprints, Inc. | Single phase fluid imprint lithography method |
| US8211214B2 (en) | 2003-10-02 | 2012-07-03 | Molecular Imprints, Inc. | Single phase fluid imprint lithography method |
| US20050084804A1 (en) * | 2003-10-16 | 2005-04-21 | Molecular Imprints, Inc. | Low surface energy templates |
| US8076386B2 (en) | 2004-02-23 | 2011-12-13 | Molecular Imprints, Inc. | Materials for imprint lithography |
| US7906180B2 (en) | 2004-02-27 | 2011-03-15 | Molecular Imprints, Inc. | Composition for an etching mask comprising a silicon-containing material |
| US20050270516A1 (en) * | 2004-06-03 | 2005-12-08 | Molecular Imprints, Inc. | System for magnification and distortion correction during nano-scale manufacturing |
| US7768624B2 (en) * | 2004-06-03 | 2010-08-03 | Board Of Regents, The University Of Texas System | Method for obtaining force combinations for template deformation using nullspace and methods optimization techniques |
| KR101175108B1 (ko) * | 2004-06-03 | 2012-08-21 | 더 보드 오브 리전츠 오브 더 유니버시티 오브 텍사스 시스템 | 마이크로리소그래피를 위한 정렬 및 오버레이의 개선을 위한 시스템 및 방법 |
| US7785526B2 (en) * | 2004-07-20 | 2010-08-31 | Molecular Imprints, Inc. | Imprint alignment method, system, and template |
| US20070231421A1 (en) * | 2006-04-03 | 2007-10-04 | Molecular Imprints, Inc. | Enhanced Multi Channel Alignment |
| US7292326B2 (en) * | 2004-11-30 | 2007-11-06 | Molecular Imprints, Inc. | Interferometric analysis for the manufacture of nano-scale devices |
| US7630067B2 (en) | 2004-11-30 | 2009-12-08 | Molecular Imprints, Inc. | Interferometric analysis method for the manufacture of nano-scale devices |
| WO2006060758A2 (en) * | 2004-12-01 | 2006-06-08 | Molecular Imprints, Inc. | Methods of exposure for the purpose of thermal management for imprint lithography processes |
| US20070228608A1 (en) * | 2006-04-03 | 2007-10-04 | Molecular Imprints, Inc. | Preserving Filled Features when Vacuum Wiping |
| US8205999B2 (en) * | 2005-06-14 | 2012-06-26 | Koninklijke Philips Electronics N.V. | Multi view display device |
| TW200801794A (en) | 2006-04-03 | 2008-01-01 | Molecular Imprints Inc | Method of concurrently patterning a substrate having a plurality of fields and a plurality of alignment marks |
| JP5027468B2 (ja) * | 2006-09-15 | 2012-09-19 | 日本ミクロコーティング株式会社 | プローブクリーニング用又はプローブ加工用シート、及びプローブ加工方法 |
| TWI347428B (en) * | 2007-11-02 | 2011-08-21 | Ind Tech Res Inst | Overlay alignment structure and method for overlay metrology using the same |
| JP4919521B2 (ja) * | 2009-03-30 | 2012-04-18 | 孝彰 福田 | 文字入力方法、及び入力文字校正方法 |
| KR101122520B1 (ko) * | 2011-11-25 | 2012-03-19 | 짚트랙코리아 주식회사 | 짚 트렉 시스템 |
| JP2015079830A (ja) * | 2013-10-16 | 2015-04-23 | 三菱電機株式会社 | 光半導体装置、光半導体装置の製造方法、及び光モジュールの製造方法 |
| WO2021156069A1 (en) | 2020-02-05 | 2021-08-12 | Asml Holding N.V. | Apparatus for sensing alignment marks |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4037969A (en) * | 1976-04-02 | 1977-07-26 | Bell Telephone Laboratories, Incorporated | Zone plate alignment marks |
| FR2392421A1 (fr) * | 1977-05-26 | 1978-12-22 | Siemens Ag | Procede pour ajuster une pastille semi-conductrice par rapport a un masque d'irradiation lors de la photolithographie aux rayons x |
| EP0010998B1 (fr) * | 1978-09-19 | 1981-09-02 | Thomson-Csf | Procédé d'alignement optique de motifs dans deux plans rapprochés et dispositif d'alignement mettant en oeuvre un tel procédé |
| US4292576A (en) * | 1980-02-29 | 1981-09-29 | The United States Of America As Represented By The Secretary Of The Air Force | Mask-slice alignment method |
| GB2073950A (en) * | 1980-04-11 | 1981-10-21 | Western Electric Co | Method and apparatus for mask/wafer alignment |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4200395A (en) * | 1977-05-03 | 1980-04-29 | Massachusetts Institute Of Technology | Alignment of diffraction gratings |
| JPS5655041A (en) * | 1979-10-11 | 1981-05-15 | Nippon Telegr & Teleph Corp <Ntt> | Positioning exposure |
| JPS5717132A (en) * | 1980-07-07 | 1982-01-28 | Fujitsu Ltd | Formation of microscopic pattern using lithography and device thereof |
| JPS57109335A (en) * | 1980-12-26 | 1982-07-07 | Toshiba Corp | Positional matching method between mask substrate and wafer |
-
1982
- 1982-12-30 FR FR8222080A patent/FR2538923A1/fr active Granted
-
1983
- 1983-12-26 JP JP58244350A patent/JPS59134830A/ja active Granted
- 1983-12-27 EP EP83402543A patent/EP0113633B1/fr not_active Expired
- 1983-12-27 US US06/565,814 patent/US4600309A/en not_active Expired - Fee Related
- 1983-12-27 DE DE8383402543T patent/DE3370199D1/de not_active Expired
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4037969A (en) * | 1976-04-02 | 1977-07-26 | Bell Telephone Laboratories, Incorporated | Zone plate alignment marks |
| FR2392421A1 (fr) * | 1977-05-26 | 1978-12-22 | Siemens Ag | Procede pour ajuster une pastille semi-conductrice par rapport a un masque d'irradiation lors de la photolithographie aux rayons x |
| EP0010998B1 (fr) * | 1978-09-19 | 1981-09-02 | Thomson-Csf | Procédé d'alignement optique de motifs dans deux plans rapprochés et dispositif d'alignement mettant en oeuvre un tel procédé |
| US4292576A (en) * | 1980-02-29 | 1981-09-29 | The United States Of America As Represented By The Secretary Of The Air Force | Mask-slice alignment method |
| GB2073950A (en) * | 1980-04-11 | 1981-10-21 | Western Electric Co | Method and apparatus for mask/wafer alignment |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2538923B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1985-03-08 |
| EP0113633A1 (fr) | 1984-07-18 |
| JPS6352453B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1988-10-19 |
| JPS59134830A (ja) | 1984-08-02 |
| EP0113633B1 (fr) | 1987-03-11 |
| US4600309A (en) | 1986-07-15 |
| DE3370199D1 (en) | 1987-04-16 |
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