FR2507821A1 - Transistor a effet de champ vertical a jonction et procede de fabrication - Google Patents

Transistor a effet de champ vertical a jonction et procede de fabrication Download PDF

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Publication number
FR2507821A1
FR2507821A1 FR8111838A FR8111838A FR2507821A1 FR 2507821 A1 FR2507821 A1 FR 2507821A1 FR 8111838 A FR8111838 A FR 8111838A FR 8111838 A FR8111838 A FR 8111838A FR 2507821 A1 FR2507821 A1 FR 2507821A1
Authority
FR
France
Prior art keywords
layer
substrate
polycrystalline silicon
type
doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8111838A
Other languages
English (en)
French (fr)
Other versions
FR2507821B1 (enExample
Inventor
Pierre Briere
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR8111838A priority Critical patent/FR2507821A1/fr
Priority to DE8282401016T priority patent/DE3260721D1/de
Priority to EP82401016A priority patent/EP0069606B1/fr
Priority to US06/387,237 priority patent/US4505022A/en
Publication of FR2507821A1 publication Critical patent/FR2507821A1/fr
Application granted granted Critical
Publication of FR2507821B1 publication Critical patent/FR2507821B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/051—Manufacture or treatment of FETs having PN junction gates
    • H10D30/0512—Manufacture or treatment of FETs having PN junction gates of FETs having PN homojunction gates
    • H10D30/0515—Manufacture or treatment of FETs having PN junction gates of FETs having PN homojunction gates of vertical FETs having PN homojunction gates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/978—Semiconductor device manufacturing: process forming tapered edges on substrate or adjacent layers

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
FR8111838A 1981-06-16 1981-06-16 Transistor a effet de champ vertical a jonction et procede de fabrication Granted FR2507821A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR8111838A FR2507821A1 (fr) 1981-06-16 1981-06-16 Transistor a effet de champ vertical a jonction et procede de fabrication
DE8282401016T DE3260721D1 (en) 1981-06-16 1982-06-04 Vertical junction field-effect transistor and process for its production
EP82401016A EP0069606B1 (fr) 1981-06-16 1982-06-04 Transistor à effet de champ vertical à jonction et procédé de fabrication
US06/387,237 US4505022A (en) 1981-06-16 1982-06-10 Junction vertical field effect transistor and process for the production thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8111838A FR2507821A1 (fr) 1981-06-16 1981-06-16 Transistor a effet de champ vertical a jonction et procede de fabrication

Publications (2)

Publication Number Publication Date
FR2507821A1 true FR2507821A1 (fr) 1982-12-17
FR2507821B1 FR2507821B1 (enExample) 1983-10-07

Family

ID=9259579

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8111838A Granted FR2507821A1 (fr) 1981-06-16 1981-06-16 Transistor a effet de champ vertical a jonction et procede de fabrication

Country Status (4)

Country Link
US (1) US4505022A (enExample)
EP (1) EP0069606B1 (enExample)
DE (1) DE3260721D1 (enExample)
FR (1) FR2507821A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4550489A (en) * 1981-11-23 1985-11-05 International Business Machines Corporation Heterojunction semiconductor
US4625388A (en) * 1982-04-26 1986-12-02 Acrian, Inc. Method of fabricating mesa MOSFET using overhang mask and resulting structure
JPS59108372A (ja) * 1982-12-13 1984-06-22 Fuji Photo Film Co Ltd 半導体光検出装置及びその製造方法
US4566172A (en) * 1984-02-24 1986-01-28 Gte Laboratories Incorporated Method of fabricating a static induction type recessed junction field effect transistor
US4543706A (en) * 1984-02-24 1985-10-01 Gte Laboratories Incorporated Fabrication of junction field effect transistor with filled grooves
US5264381A (en) * 1989-01-18 1993-11-23 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a static induction type switching device
US5143859A (en) * 1989-01-18 1992-09-01 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a static induction type switching device
FR2679068B1 (fr) * 1991-07-10 1997-04-25 France Telecom Procede de fabrication d'un transistor a effet de champ vertical, et transistor obtenu par ce procede.
FR2693314B1 (fr) * 1992-07-02 1994-10-07 Alain Chantre Transistor JFET vertical à mode de fonctionnement bipolaire optimisé et procédé de fabrication correspondant.
US5260227A (en) * 1992-11-24 1993-11-09 Hughes Aircraft Company Method of making a self aligned static induction transistor
KR100206876B1 (ko) * 1995-12-28 1999-07-01 구본준 모스전계효과트랜지스터 제조방법
FR2855653B1 (fr) * 2003-05-27 2005-10-21 Thales Sa Structure amorphe de couplage optique pour detecteur d'ondes electromagnetiques et detecteur associe

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4262296A (en) * 1979-07-27 1981-04-14 General Electric Company Vertical field effect transistor with improved gate and channel structure

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3851379A (en) * 1973-05-16 1974-12-03 Westinghouse Electric Corp Solid state components
JPS52147063A (en) * 1976-06-02 1977-12-07 Toshiba Corp Semiconductor electrode forming method
US4070690A (en) * 1976-08-17 1978-01-24 Westinghouse Electric Corporation VMOS transistor
US4129879A (en) * 1977-04-21 1978-12-12 General Electric Company Vertical field effect transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4262296A (en) * 1979-07-27 1981-04-14 General Electric Company Vertical field effect transistor with improved gate and channel structure

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/78 *
EXBK/79 *

Also Published As

Publication number Publication date
EP0069606B1 (fr) 1984-09-12
DE3260721D1 (en) 1984-10-18
US4505022A (en) 1985-03-19
EP0069606A1 (fr) 1983-01-12
FR2507821B1 (enExample) 1983-10-07

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