FR2506494B1 - Memoire morte electriquement programmable - Google Patents

Memoire morte electriquement programmable

Info

Publication number
FR2506494B1
FR2506494B1 FR8201072A FR8201072A FR2506494B1 FR 2506494 B1 FR2506494 B1 FR 2506494B1 FR 8201072 A FR8201072 A FR 8201072A FR 8201072 A FR8201072 A FR 8201072A FR 2506494 B1 FR2506494 B1 FR 2506494B1
Authority
FR
France
Prior art keywords
electrically programmable
dead memory
programmable dead
memory
electrically
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8201072A
Other languages
English (en)
Other versions
FR2506494A1 (fr
Inventor
Minoru Fukuda
Shigeru Yamatani
Kotaro Nishimura
Akira Endo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of FR2506494A1 publication Critical patent/FR2506494A1/fr
Application granted granted Critical
Publication of FR2506494B1 publication Critical patent/FR2506494B1/fr
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
FR8201072A 1981-05-22 1982-01-25 Memoire morte electriquement programmable Expired FR2506494B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7651981A JPS57192067A (en) 1981-05-22 1981-05-22 Erasable and programmable read only memory unit

Publications (2)

Publication Number Publication Date
FR2506494A1 FR2506494A1 (fr) 1982-11-26
FR2506494B1 true FR2506494B1 (fr) 1986-01-24

Family

ID=13607521

Family Applications (2)

Application Number Title Priority Date Filing Date
FR8201072A Expired FR2506494B1 (fr) 1981-05-22 1982-01-25 Memoire morte electriquement programmable
FR8201791A Expired FR2506495B1 (fr) 1981-05-22 1982-02-04 Memoire morte electriquement programmable

Family Applications After (1)

Application Number Title Priority Date Filing Date
FR8201791A Expired FR2506495B1 (fr) 1981-05-22 1982-02-04 Memoire morte electriquement programmable

Country Status (8)

Country Link
US (1) US4458348A (fr)
JP (1) JPS57192067A (fr)
DE (2) DE3219235A1 (fr)
FR (2) FR2506494B1 (fr)
GB (2) GB2099650B (fr)
HK (2) HK45286A (fr)
IT (2) IT1151192B (fr)
MY (2) MY8600552A (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2528613B1 (fr) * 1982-06-09 1991-09-20 Hitachi Ltd Memoire a semi-conducteurs
US4581672A (en) * 1983-08-31 1986-04-08 National Semiconductor Corporation Internal high voltage (Vpp) regulator for integrated circuits
US4599707A (en) * 1984-03-01 1986-07-08 Signetics Corporation Byte wide EEPROM with individual write circuits and write prevention means
US4698787A (en) * 1984-11-21 1987-10-06 Exel Microelectronics, Inc. Single transistor electrically programmable memory device and method
DE3586493T2 (de) * 1984-12-28 1993-01-14 Nippon Electric Co Nichtfluechtige halbleiterspeicheranordnung.
US4718041A (en) * 1986-01-09 1988-01-05 Texas Instruments Incorporated EEPROM memory having extended life
US4852063A (en) * 1987-11-23 1989-07-25 Ford Aerospace & Communications Corporation Programmable voltage offset circuit
JPH0770235B2 (ja) * 1988-06-24 1995-07-31 株式会社東芝 不揮発性メモリ回路装置
JPH0713880B2 (ja) * 1988-11-21 1995-02-15 株式会社東芝 不揮発性半導体メモリ
US5126808A (en) * 1989-10-23 1992-06-30 Advanced Micro Devices, Inc. Flash EEPROM array with paged erase architecture
US5245569A (en) * 1992-02-27 1993-09-14 Micron Technology, Inc. Semiconductor memory device with circuit for isolating arrayed memory cells, and method for isolating
EP0616332B1 (fr) * 1993-03-18 1999-06-23 STMicroelectronics S.r.l. Réseau de mémoire flash-EEPROM non-volatile
WO1995024057A2 (fr) * 1994-03-03 1995-09-08 Rohm Corporation Cellule memoire flash eeprom mono-transistor basse tension programmable et effaçable selon le procede fowler-nordheim
JP3571749B2 (ja) * 1994-04-08 2004-09-29 株式会社ルネサスＬｓｉデザイン 不揮発性半導体記憶装置
US6157568A (en) * 1998-12-23 2000-12-05 Vantis Corporation Avalanche programmed floating gate memory cell structure with program element in first polysilicon layer
JP3568868B2 (ja) * 2000-02-28 2004-09-22 沖電気工業株式会社 読み出し専用メモリ
MX345910B (es) 2009-09-30 2017-02-22 Tso3 Inc Metodo de esterilizacion con peroxido de hidrogeno.

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3836992A (en) * 1973-03-16 1974-09-17 Ibm Electrically erasable floating gate fet memory cell
DE2514582C2 (de) * 1975-04-03 1977-05-26 Siemens Ag Schaltung zur erzeugung von leseimpulsen
US4114255A (en) * 1976-08-16 1978-09-19 Intel Corporation Floating gate storage device and method of fabrication
US4056807A (en) * 1976-08-16 1977-11-01 Bell Telephone Laboratories, Incorporated Electronically alterable diode logic circuit
US4099264A (en) * 1976-10-28 1978-07-04 Sperry Rand Corporation Non-destructive interrogation control circuit for a variable threshold FET memory
FR2375692A1 (fr) * 1976-12-27 1978-07-21 Texas Instruments Inc Memoire semi-conductrice a grilles flottantes, programmable electriquement
JPS5457875A (en) * 1977-10-17 1979-05-10 Hitachi Ltd Semiconductor nonvolatile memory device
JPS54152932A (en) * 1978-05-24 1979-12-01 Hitachi Ltd Write high-tension supply circuit
JPS6014438B2 (ja) * 1979-08-29 1985-04-13 株式会社東芝 不揮発性半導体メモリ−
NL8004857A (nl) * 1979-08-31 1981-03-03 Xicor Inc Niet-vluchtig, statisch, vrij toegankelijk geheugen- stelsel.
JPS5644196A (en) * 1979-09-14 1981-04-23 Nec Corp Nonvolatile semiconductor memory device
JPS5654693A (en) * 1979-10-05 1981-05-14 Hitachi Ltd Programable rom
JPS5713772A (en) * 1980-06-30 1982-01-23 Hitachi Ltd Semiconductor device and manufacture thereof
US4366555A (en) * 1980-08-01 1982-12-28 National Semiconductor Corporation Electrically erasable programmable read only memory
US4415993A (en) * 1981-11-23 1983-11-15 The United States Of America As Represented By The Secretary Of The Air Force Fast access non-volatile memory

Also Published As

Publication number Publication date
DE3219235A1 (de) 1983-05-11
FR2506494A1 (fr) 1982-11-26
IT8221404A0 (it) 1982-05-20
GB2099649A (en) 1982-12-08
MY8600551A (en) 1986-12-31
HK45286A (en) 1986-06-27
FR2506495B1 (fr) 1985-06-21
IT1151191B (it) 1986-12-17
GB2099650B (en) 1985-01-23
US4458348A (en) 1984-07-03
IT1151192B (it) 1986-12-17
JPS57192067A (en) 1982-11-26
FR2506495A1 (fr) 1982-11-26
DE3219217A1 (de) 1982-12-09
GB2099650A (en) 1982-12-08
HK45186A (en) 1986-06-27
IT8221403A0 (it) 1982-05-20
MY8600552A (en) 1986-12-31
GB2099649B (en) 1985-01-03

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Legal Events

Date Code Title Description
ST Notification of lapse