FR2491666B1 - Dispositif semi-conducteur de memorisation, tel que par exemple une memoire dynamique a acces direct du type mos - Google Patents

Dispositif semi-conducteur de memorisation, tel que par exemple une memoire dynamique a acces direct du type mos

Info

Publication number
FR2491666B1
FR2491666B1 FR8103222A FR8103222A FR2491666B1 FR 2491666 B1 FR2491666 B1 FR 2491666B1 FR 8103222 A FR8103222 A FR 8103222A FR 8103222 A FR8103222 A FR 8103222A FR 2491666 B1 FR2491666 B1 FR 2491666B1
Authority
FR
France
Prior art keywords
direct access
mos type
memory device
access memory
semiconductor memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8103222A
Other languages
English (en)
Other versions
FR2491666A1 (fr
Inventor
Toshiaki Tsuchiya
Manabu Itsumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP55139917A external-priority patent/JPS5764963A/ja
Priority claimed from JP55149562A external-priority patent/JPS5832791B2/ja
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Publication of FR2491666A1 publication Critical patent/FR2491666A1/fr
Application granted granted Critical
Publication of FR2491666B1 publication Critical patent/FR2491666B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
FR8103222A 1980-10-08 1981-02-26 Dispositif semi-conducteur de memorisation, tel que par exemple une memoire dynamique a acces direct du type mos Expired FR2491666B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP55139917A JPS5764963A (en) 1980-10-08 1980-10-08 Semiconductor device
JP55149562A JPS5832791B2 (ja) 1980-10-25 1980-10-25 半導体装置

Publications (2)

Publication Number Publication Date
FR2491666A1 FR2491666A1 (fr) 1982-04-09
FR2491666B1 true FR2491666B1 (fr) 1987-07-17

Family

ID=26472584

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8103222A Expired FR2491666B1 (fr) 1980-10-08 1981-02-26 Dispositif semi-conducteur de memorisation, tel que par exemple une memoire dynamique a acces direct du type mos

Country Status (6)

Country Link
US (1) US4449142A (fr)
CA (1) CA1164562A (fr)
DE (1) DE3106197C2 (fr)
FR (1) FR2491666B1 (fr)
GB (1) GB2087642B (fr)
NL (1) NL8100647A (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6021064A (en) * 1998-02-04 2000-02-01 Vlsi Technology, Inc. Layout for data storage circuit using shared bit line and method therefor
US6072713A (en) * 1998-02-04 2000-06-06 Vlsi Technology, Inc. Data storage circuit using shared bit line and method therefor
JPWO2003015169A1 (ja) * 2001-08-07 2004-12-02 株式会社ルネサステクノロジ 半導体装置およびｉｃカード
US7741670B2 (en) * 2005-09-30 2010-06-22 Broadcom Corporation Semiconductor decoupling capacitor

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4915668B1 (fr) * 1969-04-15 1974-04-16
GB1457253A (en) * 1972-12-01 1976-12-01 Mullard Ltd Semiconductor charge transfer devices
GB1548877A (en) * 1975-06-26 1979-07-18 Mullard Ltd Semiconductor devices
NL7701172A (nl) * 1977-02-04 1978-08-08 Philips Nv Halfgeleidergeheugeninrichting.
WO1979000474A1 (fr) * 1978-01-03 1979-07-26 D Erb Memoire de charge stratifiee
US4291391A (en) * 1979-09-14 1981-09-22 Texas Instruments Incorporated Taper isolated random access memory array and method of operating

Also Published As

Publication number Publication date
FR2491666A1 (fr) 1982-04-09
GB2087642A (en) 1982-05-26
NL8100647A (nl) 1982-05-03
US4449142A (en) 1984-05-15
DE3106197C2 (de) 1986-03-27
CA1164562A (fr) 1984-03-27
GB2087642B (en) 1984-10-17
DE3106197A1 (de) 1982-04-29

Similar Documents

Publication Publication Date Title
GB2100542B (en) Static type semiconductor random access memory sense amplifier
FR2464535B1 (fr) Systeme de memoire statique remanente a acces direct
GB2093236B (en) Semiconductor random access memory arrangements
DE3177169D1 (de) Halbleiterspeicheranordnung.
BE876484A (fr) Dispositif de detection de defauts pour une memoire dynamique
FR2544537B1 (fr) Dispositif de memoire a semi-conducteurs du type memoire dynamique a acces direct ou aleatoire (dram) a haute densite d'integration et procede de fabrication d'un tel dispositif
FR2519177B1 (fr) Dispositif a circuits integres de memoire ram dynamique
DE3584694D1 (de) Dynamischer direktzugriffspeicher.
IT8168706A0 (it) Elaboratore elettronico con memoria locale ad accesso casuale indicizza ta
FR2340599A1 (fr) Memoire a acces aleatoire, dynamique
FR2533738B1 (fr) Dispositif de memoire a semiconducteurs
JPS57109360A (en) Mos substrate bias voltage genertor controlled for static random access memory
JPS5350944A (en) Mos semiconductor memory
DE3071677D1 (en) Semiconductor circuit for a dynamic random access memory
EP0089720A3 (en) Single transistor, single capacitor mos random access memory
IT8067197A0 (it) Dispositivo di memoria dinamica ad accesso casuale
IT8221482A0 (it) Dispositivo di memoria a semiconduttori in particolare memoria ad accesso casuale dinamica.
IT8322951A0 (it) Dispositivo di memoria a semiconduttori.
DE3586064D1 (de) Dynamischer lese-schreib-direktzugriffsspeicher.
DE69019438D1 (de) MOS-Typ-Halbleiterspeicheranordnung.
DE3072204D1 (de) Halbleiterspeicheranordnung.
FR2680429B1 (fr) Circuit de transmission de donnees pour une memoire dynamique a acces aleatoire d'un dispositif de memoire a semi-conducteurs.
FR2491666B1 (fr) Dispositif semi-conducteur de memorisation, tel que par exemple une memoire dynamique a acces direct du type mos
DE3381723D1 (de) Halbleiterspeicheranordnung.
FR2353116A1 (fr) Circuit amplificateur de lecture pour une memoire mos dynamique

Legal Events

Date Code Title Description
TP Transmission of property
ST Notification of lapse