JPS5764963A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5764963A JPS5764963A JP55139917A JP13991780A JPS5764963A JP S5764963 A JPS5764963 A JP S5764963A JP 55139917 A JP55139917 A JP 55139917A JP 13991780 A JP13991780 A JP 13991780A JP S5764963 A JPS5764963 A JP S5764963A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- detected
- terminal
- fixed
- change
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
Landscapes
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To obtain a high speedy and high density memory unit of a semiconductor devide by a method wherein a current of buried channel being amplified according to stored charge is detected to be read out. CONSTITUTION:N<+> type layers 13a, 13b are provided in the surface of a P type layer 12 on an insulating layer 11, a gate electrode 15 is provided interposing a gate insulating film 14 between them, and a word line terminal A for writing is fixed thereto. The N<+> type layers 13a, 13b are separated, a bit line terminal B for reading and an earthing terminal C are fixed to the P type layer 12, and a terminal D for bit line for writing and for word line for reading is fixed to the layer 13a. When charge is supplied to the N<+> type layer 13b, breadth of a space charge layer 17 is changed to change conductivity of the channel 18. Accordingly when change of current is detected between the terminals B-C, existence of stored information in the layer 13b can be read out. Because it is detected as change of the current value, quantity of read-out signal can be formed on a large scale.
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55139917A JPS5764963A (en) | 1980-10-08 | 1980-10-08 | Semiconductor device |
CA000369709A CA1164562A (en) | 1980-10-08 | 1981-01-30 | Semiconductor memory device |
US06/230,460 US4449142A (en) | 1980-10-08 | 1981-02-02 | Semiconductor memory device |
GB8103774A GB2087642B (en) | 1980-10-08 | 1981-02-06 | Semiconductor memory device |
NL8100647A NL8100647A (en) | 1980-10-08 | 1981-02-11 | SEMICONDUCTOR MEMORY DEVICE. |
DE3106197A DE3106197C2 (en) | 1980-10-08 | 1981-02-19 | Semiconductor memory |
FR8103222A FR2491666B1 (en) | 1980-10-08 | 1981-02-26 | SEMICONDUCTOR MEMORY DEVICE, SUCH AS FOR EXAMPLE A DYNAMIC DIRECT ACCESS MEMORY OF THE MOS TYPE |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55139917A JPS5764963A (en) | 1980-10-08 | 1980-10-08 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5764963A true JPS5764963A (en) | 1982-04-20 |
Family
ID=15256651
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55139917A Pending JPS5764963A (en) | 1980-10-08 | 1980-10-08 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5764963A (en) |
-
1980
- 1980-10-08 JP JP55139917A patent/JPS5764963A/en active Pending
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