FR2487808A1 - Procede et dispositif d'elimination du bore dans le silicium par fusion de zone sous plasma reactif - Google Patents
Procede et dispositif d'elimination du bore dans le silicium par fusion de zone sous plasma reactif Download PDFInfo
- Publication number
- FR2487808A1 FR2487808A1 FR8017120A FR8017120A FR2487808A1 FR 2487808 A1 FR2487808 A1 FR 2487808A1 FR 8017120 A FR8017120 A FR 8017120A FR 8017120 A FR8017120 A FR 8017120A FR 2487808 A1 FR2487808 A1 FR 2487808A1
- Authority
- FR
- France
- Prior art keywords
- plasma
- silicon
- oxygen
- ingot
- boron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 38
- 239000010703 silicon Substances 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title claims description 25
- 230000008569 process Effects 0.000 title claims description 9
- 238000002844 melting Methods 0.000 title 1
- 230000008018 melting Effects 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 37
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 37
- 239000001301 oxygen Substances 0.000 claims abstract description 37
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 37
- 239000007789 gas Substances 0.000 claims abstract description 11
- 239000000203 mixture Substances 0.000 claims abstract description 9
- 230000005284 excitation Effects 0.000 claims abstract description 3
- 229910052796 boron Inorganic materials 0.000 claims description 31
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 30
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 18
- 230000004927 fusion Effects 0.000 claims description 10
- 229910052786 argon Inorganic materials 0.000 claims description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- 230000008030 elimination Effects 0.000 claims description 7
- 238000003379 elimination reaction Methods 0.000 claims description 7
- 239000002253 acid Substances 0.000 claims description 3
- 230000001939 inductive effect Effects 0.000 claims description 2
- 238000000746 purification Methods 0.000 claims description 2
- 150000001639 boron compounds Chemical class 0.000 claims 1
- 230000005684 electric field Effects 0.000 claims 1
- 238000004857 zone melting Methods 0.000 abstract 2
- -1 ARGON Substances 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 description 9
- 229910052739 hydrogen Inorganic materials 0.000 description 9
- 239000012535 impurity Substances 0.000 description 8
- 238000012360 testing method Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 210000004027 cell Anatomy 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000007499 fusion processing Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 108090000623 proteins and genes Proteins 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- CFOAUMXQOCBWNJ-UHFFFAOYSA-N [B].[Si] Chemical compound [B].[Si] CFOAUMXQOCBWNJ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 150000001638 boron Chemical class 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 101150006061 neur gene Proteins 0.000 description 1
- 210000002569 neuron Anatomy 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 239000003039 volatile agent Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/22—Heating of the molten zone by irradiation or electric discharge
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8017120A FR2487808A1 (fr) | 1980-08-01 | 1980-08-01 | Procede et dispositif d'elimination du bore dans le silicium par fusion de zone sous plasma reactif |
| US06/287,789 US4399116A (en) | 1980-08-01 | 1981-07-28 | Zone purification of silicon in a reactive plasma |
| EP81401228A EP0045689B1 (fr) | 1980-08-01 | 1981-07-29 | Procédé d'élimination du bore dans le silicium par fusion de zone sous plasma réactif |
| DE8181401228T DE3163983D1 (en) | 1980-08-01 | 1981-07-29 | Process for the removal of boron from silicon by zone-melting with a reactive plasma |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8017120A FR2487808A1 (fr) | 1980-08-01 | 1980-08-01 | Procede et dispositif d'elimination du bore dans le silicium par fusion de zone sous plasma reactif |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2487808A1 true FR2487808A1 (fr) | 1982-02-05 |
| FR2487808B1 FR2487808B1 (enExample) | 1984-11-02 |
Family
ID=9244831
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8017120A Granted FR2487808A1 (fr) | 1980-08-01 | 1980-08-01 | Procede et dispositif d'elimination du bore dans le silicium par fusion de zone sous plasma reactif |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4399116A (enExample) |
| EP (1) | EP0045689B1 (enExample) |
| DE (1) | DE3163983D1 (enExample) |
| FR (1) | FR2487808A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000050342A1 (en) * | 1999-02-25 | 2000-08-31 | Abdjukhanov Mansur Abdrakhmano | Silicon purifying method and device for realising the same |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0274283B1 (fr) * | 1987-01-08 | 1989-05-24 | Rhone-Poulenc Chimie | Procédé de purification sous plasma de silicium divisé |
| FR2585690B1 (fr) * | 1985-07-31 | 1987-09-25 | Rhone Poulenc Spec Chim | Procede de purification sous plasma de silicium divise |
| FR2594856A1 (fr) * | 1986-02-27 | 1987-08-28 | Photowatt Int | Procede d'obtention de cristaux de silicium pour applications photovoltaiques |
| GB8915448D0 (en) * | 1989-07-06 | 1989-08-23 | Herbert Nigel | Portable viscometer |
| JP3000109B2 (ja) * | 1990-09-20 | 2000-01-17 | 株式会社住友シチックス尼崎 | 高純度シリコン鋳塊の製造方法 |
| DE4105910A1 (de) * | 1991-02-26 | 1992-08-27 | Bayer Ag | Verfahren zur herstellung von metallfolien sowie deren verwendung |
| RU94036650A (ru) * | 1994-09-28 | 1996-08-27 | Г.С. Бурханов | Способ бестигельной зонной плавки для выращивания кристаллических слитков и устройство для его осуществления |
| US5759360A (en) * | 1995-03-13 | 1998-06-02 | Applied Materials, Inc. | Wafer clean sputtering process |
| FR2772741B1 (fr) * | 1997-12-19 | 2000-03-10 | Centre Nat Rech Scient | Procede et installation d'affinage du silicium |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1469486A (fr) * | 1964-09-15 | 1967-02-17 | Gen Trustee Company Inc | Purification du silicium |
| DE1619951A1 (de) * | 1967-09-09 | 1970-12-17 | Consortium Elektrochem Ind | Verfahren und Vorrichtung zum Zonenschmelzen mit Hilfe von HF-Gasentladungen |
| DE2608965A1 (de) * | 1976-03-04 | 1977-09-08 | Wacker Chemitronic | Verfahren zur bestimmung des donatorgehaltes von hochreinem polykristallinem silicium fuer halbleiterzwecke |
| FR2438499A1 (fr) * | 1978-10-13 | 1980-05-09 | Anvar | Procede de purification et d'elaboration de cristaux par fusion de zone utilisant un jet de plasma et installation correspondante |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA625027A (en) * | 1961-08-01 | K. Herglotz Heribert | Process for purifying silicon | |
| BE548227A (enExample) * | 1955-07-22 |
-
1980
- 1980-08-01 FR FR8017120A patent/FR2487808A1/fr active Granted
-
1981
- 1981-07-28 US US06/287,789 patent/US4399116A/en not_active Expired - Fee Related
- 1981-07-29 EP EP81401228A patent/EP0045689B1/fr not_active Expired
- 1981-07-29 DE DE8181401228T patent/DE3163983D1/de not_active Expired
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1469486A (fr) * | 1964-09-15 | 1967-02-17 | Gen Trustee Company Inc | Purification du silicium |
| DE1619951A1 (de) * | 1967-09-09 | 1970-12-17 | Consortium Elektrochem Ind | Verfahren und Vorrichtung zum Zonenschmelzen mit Hilfe von HF-Gasentladungen |
| DE2608965A1 (de) * | 1976-03-04 | 1977-09-08 | Wacker Chemitronic | Verfahren zur bestimmung des donatorgehaltes von hochreinem polykristallinem silicium fuer halbleiterzwecke |
| FR2438499A1 (fr) * | 1978-10-13 | 1980-05-09 | Anvar | Procede de purification et d'elaboration de cristaux par fusion de zone utilisant un jet de plasma et installation correspondante |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000050342A1 (en) * | 1999-02-25 | 2000-08-31 | Abdjukhanov Mansur Abdrakhmano | Silicon purifying method and device for realising the same |
| RU2159213C2 (ru) * | 1999-02-25 | 2000-11-20 | Абдюханов Мансур Абдрахманович | Способ очистки кремния и устройство для его осуществления |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0045689A1 (fr) | 1982-02-10 |
| DE3163983D1 (en) | 1984-07-12 |
| EP0045689B1 (fr) | 1984-06-06 |
| FR2487808B1 (enExample) | 1984-11-02 |
| US4399116A (en) | 1983-08-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |