DE3163983D1 - Process for the removal of boron from silicon by zone-melting with a reactive plasma - Google Patents
Process for the removal of boron from silicon by zone-melting with a reactive plasmaInfo
- Publication number
- DE3163983D1 DE3163983D1 DE8181401228T DE3163983T DE3163983D1 DE 3163983 D1 DE3163983 D1 DE 3163983D1 DE 8181401228 T DE8181401228 T DE 8181401228T DE 3163983 T DE3163983 T DE 3163983T DE 3163983 D1 DE3163983 D1 DE 3163983D1
- Authority
- DE
- Germany
- Prior art keywords
- boron
- melting
- zone
- silicon
- removal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/22—Heating of the molten zone by irradiation or electric discharge
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8017120A FR2487808A1 (fr) | 1980-08-01 | 1980-08-01 | Procede et dispositif d'elimination du bore dans le silicium par fusion de zone sous plasma reactif |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3163983D1 true DE3163983D1 (en) | 1984-07-12 |
Family
ID=9244831
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8181401228T Expired DE3163983D1 (en) | 1980-08-01 | 1981-07-29 | Process for the removal of boron from silicon by zone-melting with a reactive plasma |
Country Status (4)
Country | Link |
---|---|
US (1) | US4399116A (de) |
EP (1) | EP0045689B1 (de) |
DE (1) | DE3163983D1 (de) |
FR (1) | FR2487808A1 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2585690B1 (fr) * | 1985-07-31 | 1987-09-25 | Rhone Poulenc Spec Chim | Procede de purification sous plasma de silicium divise |
EP0274283B1 (de) * | 1987-01-08 | 1989-05-24 | Rhone-Poulenc Chimie | Verfahren zur Plasmareinigung von zerkleinertem Silizium |
FR2594856A1 (fr) * | 1986-02-27 | 1987-08-28 | Photowatt Int | Procede d'obtention de cristaux de silicium pour applications photovoltaiques |
GB8915448D0 (en) * | 1989-07-06 | 1989-08-23 | Herbert Nigel | Portable viscometer |
JP3000109B2 (ja) * | 1990-09-20 | 2000-01-17 | 株式会社住友シチックス尼崎 | 高純度シリコン鋳塊の製造方法 |
DE4105910A1 (de) * | 1991-02-26 | 1992-08-27 | Bayer Ag | Verfahren zur herstellung von metallfolien sowie deren verwendung |
RU94036650A (ru) * | 1994-09-28 | 1996-08-27 | Г.С. Бурханов | Способ бестигельной зонной плавки для выращивания кристаллических слитков и устройство для его осуществления |
US5759360A (en) * | 1995-03-13 | 1998-06-02 | Applied Materials, Inc. | Wafer clean sputtering process |
FR2772741B1 (fr) * | 1997-12-19 | 2000-03-10 | Centre Nat Rech Scient | Procede et installation d'affinage du silicium |
RU2159213C2 (ru) * | 1999-02-25 | 2000-11-20 | Абдюханов Мансур Абдрахманович | Способ очистки кремния и устройство для его осуществления |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA625027A (en) * | 1961-08-01 | K. Herglotz Heribert | Process for purifying silicon | |
BE548227A (de) * | 1955-07-22 | |||
FR1469486A (fr) * | 1964-09-15 | 1967-02-17 | Gen Trustee Company Inc | Purification du silicium |
DE2608965A1 (de) * | 1976-03-04 | 1977-09-08 | Wacker Chemitronic | Verfahren zur bestimmung des donatorgehaltes von hochreinem polykristallinem silicium fuer halbleiterzwecke |
FR2438499A1 (fr) * | 1978-10-13 | 1980-05-09 | Anvar | Procede de purification et d'elaboration de cristaux par fusion de zone utilisant un jet de plasma et installation correspondante |
-
1980
- 1980-08-01 FR FR8017120A patent/FR2487808A1/fr active Granted
-
1981
- 1981-07-28 US US06/287,789 patent/US4399116A/en not_active Expired - Fee Related
- 1981-07-29 DE DE8181401228T patent/DE3163983D1/de not_active Expired
- 1981-07-29 EP EP81401228A patent/EP0045689B1/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US4399116A (en) | 1983-08-16 |
EP0045689B1 (de) | 1984-06-06 |
FR2487808B1 (de) | 1984-11-02 |
FR2487808A1 (fr) | 1982-02-05 |
EP0045689A1 (de) | 1982-02-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3065407D1 (en) | Process for reactive ion-etching of silicon | |
DE2960114D1 (en) | Process for equalizing the material removal rate of wafers by polishing | |
GB2076587B (en) | Plasma deposition apparatus | |
DE3069667D1 (en) | Process for purifying crude silicon | |
ZA818929B (en) | Process for the manufacture of vertical p-junctions in the pulling of silicon from a silico melt | |
DE3062678D1 (en) | A method for processing substrate materials by means of treating plasma | |
JPS53149934A (en) | Process for preparing sulfurrcontaining organo silicon compound | |
DE3169538D1 (en) | Process and apparatus for the production of silicon bodies by continuous chemical vapor deposition | |
GB8312153D0 (en) | Producing silicon carbide articles | |
DE3162919D1 (en) | Process for treating silicon particles within a silicon reactor system | |
DE3163983D1 (en) | Process for the removal of boron from silicon by zone-melting with a reactive plasma | |
GB2049738B (en) | Vapourizer for vacuum deposition apparatus | |
JPS53127420A (en) | Process for preparing organo silicon compound | |
GB8321536D0 (en) | Deposition process | |
GB2076385B (en) | Process for producing type silicon carbide | |
ZA818286B (en) | Process for production orientied silicon steel | |
DE3262134D1 (en) | Novel process for producing silicon hydride | |
DE3162816D1 (en) | A process for the manufacture of fibre reinforced shaped articles | |
GB2075533B (en) | Process for producing alkoxylated silanes | |
EP0060625A3 (en) | Improved method for plasma deposition of amorphous materials | |
DE3361577D1 (en) | Process for preparing biotin | |
ZA806237B (en) | A process for the preparation of silicon or ferrosilicon | |
DE3161046D1 (en) | Process for producing a polycrystalline silicon carbide body | |
GB2050436B (en) | Process for producing electromagnetic silicon steel | |
IE56138B1 (en) | A process for the deposition of gold-copper-zinc alloys |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8339 | Ceased/non-payment of the annual fee |