FR2484467B1 - Procede pour la fabrication d'un cristal semi-conducteur a composes des groupes ii-iv - Google Patents

Procede pour la fabrication d'un cristal semi-conducteur a composes des groupes ii-iv

Info

Publication number
FR2484467B1
FR2484467B1 FR8111519A FR8111519A FR2484467B1 FR 2484467 B1 FR2484467 B1 FR 2484467B1 FR 8111519 A FR8111519 A FR 8111519A FR 8111519 A FR8111519 A FR 8111519A FR 2484467 B1 FR2484467 B1 FR 2484467B1
Authority
FR
France
Prior art keywords
manufacture
group
semiconductor crystal
crystal
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8111519A
Other languages
English (en)
Other versions
FR2484467A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of FR2484467A1 publication Critical patent/FR2484467A1/fr
Application granted granted Critical
Publication of FR2484467B1 publication Critical patent/FR2484467B1/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/007—Tellurides or selenides of metals
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/02—Zone-melting with a solvent, e.g. travelling solvent process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Led Devices (AREA)
FR8111519A 1980-06-11 1981-06-11 Procede pour la fabrication d'un cristal semi-conducteur a composes des groupes ii-iv Expired FR2484467B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55078620A JPS6037076B2 (ja) 1980-06-11 1980-06-11 ３−６族化合物半導体の温度液相成長法

Publications (2)

Publication Number Publication Date
FR2484467A1 FR2484467A1 (fr) 1981-12-18
FR2484467B1 true FR2484467B1 (fr) 1985-08-30

Family

ID=13666925

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8111519A Expired FR2484467B1 (fr) 1980-06-11 1981-06-11 Procede pour la fabrication d'un cristal semi-conducteur a composes des groupes ii-iv

Country Status (5)

Country Link
US (1) US4465527A (fr)
JP (1) JPS6037076B2 (fr)
DE (1) DE3123233C2 (fr)
FR (1) FR2484467B1 (fr)
GB (1) GB2078697B (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS575325A (en) * 1980-06-12 1982-01-12 Junichi Nishizawa Semicondoctor p-n junction device and manufacture thereof
JPS577131A (en) * 1980-06-16 1982-01-14 Junichi Nishizawa Manufacture of p-n junction
JPS5863183A (ja) * 1981-10-09 1983-04-14 Semiconductor Res Found ２−６族間化合物の結晶成長法
JPS6037077B2 (ja) * 1982-07-02 1985-08-23 財団法人 半導体研究振興会 ＺｎＳｅの結晶成長法
JPS598383A (ja) * 1982-07-06 1984-01-17 Semiconductor Res Found ＺｎＳｅ緑色発光ダイオ−ド
JPS6050759B2 (ja) * 1982-07-14 1985-11-09 財団法人 半導体研究振興会 ＺｎＳｅのエピタキシヤル成長法及び成長装置
US4728388A (en) * 1983-08-17 1988-03-01 Commissariat A L'energie Atomique Process for producing a monocrystal of a compound by crystallizing a polycrystal of said compound by transferring a solvent zone
US4588446A (en) * 1985-02-21 1986-05-13 Texas Instruments Incorporated Method for producing graded band gap mercury cadmium telluride
JPS61270299A (ja) * 1985-04-25 1986-11-29 Stanley Electric Co Ltd ２−６族化合物結晶成長方法
KR880010481A (ko) * 1987-02-21 1988-10-10 강진구 액상 박막 결정 성장방법 및 장치
US4960721A (en) * 1987-11-10 1990-10-02 Kabushiki Kaisha Toshiba Method for purifying group II-IV compound semiconductors
ES2073406T3 (es) * 1987-11-20 1995-08-16 Canon Kk Elemento fotovoltaico con union pin con una capa semiconductora de tipo p o de tipo n que comprende un material que no es de cristal unico conteniendo zn, se, te, h en una cantidad de 1 a 4 atomico % y un contaminante y una capa semicondcutora de tipo i comprendiendo un material
US5242709A (en) * 1989-10-05 1993-09-07 Litton Systems, Inc. Method for hardening zinc selenide and zinc sulfide
JP2525930B2 (ja) * 1990-05-15 1996-08-21 スタンレー電気株式会社 ▲ｉｉ▼―▲ｖｉ▼族化合物半導体の結晶成長方法
FR2816755B1 (fr) * 2000-11-13 2002-12-20 Commissariat Energie Atomique Procede de croissance d'un materiau semi-conducteur massif de type ii-vi
WO2006054580A1 (fr) * 2004-11-18 2006-05-26 Nippon Mining & Metals Co., Ltd. SIMPLE CRISTAL SEMI-CONDUCTEUR EN COMPOSÉ CdTe
CA2510415C (fr) * 2005-06-21 2012-08-14 Redlen Technologies Inc. Un procede avec reacteur a paroi froide pour melanger, homogeneiser et consolider des composes semiconducteurs

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3568306A (en) * 1965-09-25 1971-03-09 Matsushita Electric Ind Co Ltd Method of making photovoltaic device by electroplating
US4190486A (en) * 1973-10-04 1980-02-26 Hughes Aircraft Company Method for obtaining optically clear, high resistivity II-VI, III-V, and IV-VI compounds by heat treatment

Also Published As

Publication number Publication date
DE3123233A1 (de) 1982-04-15
DE3123233C2 (de) 1983-12-29
JPS6037076B2 (ja) 1985-08-23
FR2484467A1 (fr) 1981-12-18
JPS573798A (en) 1982-01-09
GB2078697B (en) 1983-11-23
US4465527A (en) 1984-08-14
GB2078697A (en) 1982-01-13

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