FR2470443A1 - Procede de fabrication de diodes zener et diodes obtenues - Google Patents

Procede de fabrication de diodes zener et diodes obtenues Download PDF

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Publication number
FR2470443A1
FR2470443A1 FR7929151A FR7929151A FR2470443A1 FR 2470443 A1 FR2470443 A1 FR 2470443A1 FR 7929151 A FR7929151 A FR 7929151A FR 7929151 A FR7929151 A FR 7929151A FR 2470443 A1 FR2470443 A1 FR 2470443A1
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FR
France
Prior art keywords
layer
wafers
type
conductivity
polycrystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7929151A
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English (en)
French (fr)
Other versions
FR2470443B1 (OSRAM
Inventor
Henri Valdman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7929151A priority Critical patent/FR2470443A1/fr
Publication of FR2470443A1 publication Critical patent/FR2470443A1/fr
Application granted granted Critical
Publication of FR2470443B1 publication Critical patent/FR2470443B1/fr
Granted legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/20—Breakdown diodes, e.g. avalanche diodes
    • H10D8/25—Zener diodes 
    • H10P32/1414—
    • H10P32/171—

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  • Electrodes Of Semiconductors (AREA)
FR7929151A 1979-11-27 1979-11-27 Procede de fabrication de diodes zener et diodes obtenues Granted FR2470443A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7929151A FR2470443A1 (fr) 1979-11-27 1979-11-27 Procede de fabrication de diodes zener et diodes obtenues

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7929151A FR2470443A1 (fr) 1979-11-27 1979-11-27 Procede de fabrication de diodes zener et diodes obtenues

Publications (2)

Publication Number Publication Date
FR2470443A1 true FR2470443A1 (fr) 1981-05-29
FR2470443B1 FR2470443B1 (OSRAM) 1983-07-22

Family

ID=9232124

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7929151A Granted FR2470443A1 (fr) 1979-11-27 1979-11-27 Procede de fabrication de diodes zener et diodes obtenues

Country Status (1)

Country Link
FR (1) FR2470443A1 (OSRAM)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2501914A1 (fr) * 1981-03-13 1982-09-17 Thomson Csf Diode zener 4 a 8 volts fonctionnant en avalanche a faible niveau de courant et procede de fabrication
WO1998028786A3 (en) * 1996-12-24 1998-09-03 Philips Electronics Nv Method of manufacturing a glass-covered semiconductor device and a glass-covered semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2832153A1 (de) * 1977-07-22 1979-01-25 Hitachi Ltd Verfahren zur herstellung von halbleitervorrichtungen

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2832153A1 (de) * 1977-07-22 1979-01-25 Hitachi Ltd Verfahren zur herstellung von halbleitervorrichtungen

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2501914A1 (fr) * 1981-03-13 1982-09-17 Thomson Csf Diode zener 4 a 8 volts fonctionnant en avalanche a faible niveau de courant et procede de fabrication
WO1998028786A3 (en) * 1996-12-24 1998-09-03 Philips Electronics Nv Method of manufacturing a glass-covered semiconductor device and a glass-covered semiconductor device
US5946586A (en) * 1996-12-24 1999-08-31 U.S. Philips Corporation Method of manufacturing a glass-covered semiconductor device

Also Published As

Publication number Publication date
FR2470443B1 (OSRAM) 1983-07-22

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