FR2460039A1 - Procede de realisation de composants semi-conducteurs, notamment de transistors a couches minces et composants a semi-conducteurs obtenus par ce procede - Google Patents
Procede de realisation de composants semi-conducteurs, notamment de transistors a couches minces et composants a semi-conducteurs obtenus par ce procede Download PDFInfo
- Publication number
- FR2460039A1 FR2460039A1 FR7916083A FR7916083A FR2460039A1 FR 2460039 A1 FR2460039 A1 FR 2460039A1 FR 7916083 A FR7916083 A FR 7916083A FR 7916083 A FR7916083 A FR 7916083A FR 2460039 A1 FR2460039 A1 FR 2460039A1
- Authority
- FR
- France
- Prior art keywords
- layer
- substrate
- metal
- semiconductor
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04Q—SELECTING
- H04Q11/00—Selecting arrangements for multiplex systems
- H04Q11/04—Selecting arrangements for multiplex systems for time-division multiplexing
Landscapes
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Thin Film Transistor (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7916083A FR2460039A1 (fr) | 1979-06-22 | 1979-06-22 | Procede de realisation de composants semi-conducteurs, notamment de transistors a couches minces et composants a semi-conducteurs obtenus par ce procede |
| US06/160,213 US4343081A (en) | 1979-06-22 | 1980-06-17 | Process for making semi-conductor devices |
| GB8019743A GB2054264B (en) | 1979-06-22 | 1980-06-17 | Deposition and etching process for making semi-conductor components |
| DE19803023171 DE3023171A1 (de) | 1979-06-22 | 1980-06-20 | Verfahren zur herstellung von halbleiterbauelementen und dadurch erhaltenes bauelement |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7916083A FR2460039A1 (fr) | 1979-06-22 | 1979-06-22 | Procede de realisation de composants semi-conducteurs, notamment de transistors a couches minces et composants a semi-conducteurs obtenus par ce procede |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2460039A1 true FR2460039A1 (fr) | 1981-01-16 |
| FR2460039B1 FR2460039B1 (enExample) | 1983-10-07 |
Family
ID=9226981
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7916083A Granted FR2460039A1 (fr) | 1979-06-22 | 1979-06-22 | Procede de realisation de composants semi-conducteurs, notamment de transistors a couches minces et composants a semi-conducteurs obtenus par ce procede |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2460039A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3431155A1 (de) * | 1983-08-26 | 1985-03-14 | Sharp K.K., Osaka | Duennfilm-transistor und verfahren zu dessen herstellung |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1440576A (fr) * | 1964-07-23 | 1966-05-27 | Rca Corp | Dispositif semi-conducteur |
| DE2140333A1 (de) * | 1971-08-11 | 1973-02-15 | Winkhaus Fa August | Drehkippbeschlag fuer fenster und tueren oder dgl |
-
1979
- 1979-06-22 FR FR7916083A patent/FR2460039A1/fr active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1440576A (fr) * | 1964-07-23 | 1966-05-27 | Rca Corp | Dispositif semi-conducteur |
| DE2140333A1 (de) * | 1971-08-11 | 1973-02-15 | Winkhaus Fa August | Drehkippbeschlag fuer fenster und tueren oder dgl |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3431155A1 (de) * | 1983-08-26 | 1985-03-14 | Sharp K.K., Osaka | Duennfilm-transistor und verfahren zu dessen herstellung |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2460039B1 (enExample) | 1983-10-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4746628A (en) | Method for making a thin film transistor | |
| US4335161A (en) | Thin film transistors, thin film transistor arrays, and a process for preparing the same | |
| US4715930A (en) | Process for producing by sloping etching a thin film transistor with a self-aligned gate with respect to the drain and source thereof | |
| US4502204A (en) | Method of manufacturing insulated gate thin film field effect transistors | |
| TW202127540A (zh) | 半導體裝置及製造半導體裝置的方法 | |
| JPS6272167A (ja) | 薄膜電界効果トランジスタ用のゲ−ト電極材料を沈積及び硬化する方法 | |
| JPH03222426A (ja) | 多層配線形成法 | |
| US4430185A (en) | Method of producing photoelectric transducers | |
| EP0139585A1 (fr) | Procédé de fabrication d'un transistor en film mince à grille auto-alignée | |
| JPH053136B2 (enExample) | ||
| EP0082783B1 (fr) | Procédé de fabrication de transistors en couches minces en silicium sur substrat isolant | |
| JP4060882B2 (ja) | 電子装置の製造方法 | |
| CN102237299A (zh) | 铝薄膜的形成方法 | |
| KR100712112B1 (ko) | 반도체 소자 및 그 제조 방법 | |
| US4343081A (en) | Process for making semi-conductor devices | |
| JP2502789B2 (ja) | 薄膜トランジスタの製造方法 | |
| JPH0542831B2 (enExample) | ||
| FR2460039A1 (fr) | Procede de realisation de composants semi-conducteurs, notamment de transistors a couches minces et composants a semi-conducteurs obtenus par ce procede | |
| KR100220933B1 (ko) | 반도체 소자의 금속배선 형성방법 | |
| JPS6083373A (ja) | 薄膜トランジスタアレイとその製造方法 | |
| FR2607323A1 (fr) | Procede de formation d'un motif consistant en une pellicule metallique a deux couches | |
| JP3216173B2 (ja) | 薄膜トランジスタ回路の製造方法 | |
| KR100223900B1 (ko) | 액정표시장치의 제조방법 | |
| KR100473225B1 (ko) | 알루미늄 금속층과 투명도전성 금속층의 접촉구조와 그를 위한 제조방법 | |
| JPH0447970B2 (enExample) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| TP | Transmission of property | ||
| TP | Transmission of property | ||
| ST | Notification of lapse |