FR2452784A1 - Procede de fabrication d'un dispositif semi-conducteur et particulierement d'un thyristor - Google Patents

Procede de fabrication d'un dispositif semi-conducteur et particulierement d'un thyristor

Info

Publication number
FR2452784A1
FR2452784A1 FR8007106A FR8007106A FR2452784A1 FR 2452784 A1 FR2452784 A1 FR 2452784A1 FR 8007106 A FR8007106 A FR 8007106A FR 8007106 A FR8007106 A FR 8007106A FR 2452784 A1 FR2452784 A1 FR 2452784A1
Authority
FR
France
Prior art keywords
conductivity
mask
zone
semiconductor
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8007106A
Other languages
English (en)
French (fr)
Other versions
FR2452784B1 (en:Method
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of FR2452784A1 publication Critical patent/FR2452784A1/fr
Application granted granted Critical
Publication of FR2452784B1 publication Critical patent/FR2452784B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/343—Gate regions of field-effect devices having PN junction gates
    • H10P14/271—
    • H10P14/2905—
    • H10P14/3411—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/026—Deposition thru hole in mask
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/088—J-Fet, i.e. junction field effect transistor

Landscapes

  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)
FR8007106A 1979-03-30 1980-03-28 Procede de fabrication d'un dispositif semi-conducteur et particulierement d'un thyristor Granted FR2452784A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3703479A JPS55130176A (en) 1979-03-30 1979-03-30 Field effect semiconductor element and method of fabricating the same

Publications (2)

Publication Number Publication Date
FR2452784A1 true FR2452784A1 (fr) 1980-10-24
FR2452784B1 FR2452784B1 (en:Method) 1985-03-08

Family

ID=12486334

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8007106A Granted FR2452784A1 (fr) 1979-03-30 1980-03-28 Procede de fabrication d'un dispositif semi-conducteur et particulierement d'un thyristor

Country Status (4)

Country Link
US (1) US4329772A (en:Method)
JP (1) JPS55130176A (en:Method)
DE (1) DE3012119C2 (en:Method)
FR (1) FR2452784A1 (en:Method)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0445008A1 (fr) * 1990-02-27 1991-09-04 Thomson-Csf Procédé de réalisation de dispositifs électroniques haute densité

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2480502A1 (fr) * 1980-04-14 1981-10-16 Thomson Csf Dispositif semi-conducteur a grille profonde, son application a une diode blocable, et procede de fabrication
US4637127A (en) * 1981-07-07 1987-01-20 Nippon Electric Co., Ltd. Method for manufacturing a semiconductor device
US4375124A (en) * 1981-11-12 1983-03-01 Gte Laboratories Incorporated Power static induction transistor fabrication
US4403396A (en) * 1981-12-24 1983-09-13 Gte Laboratories Incorporated Semiconductor device design and process
US4503451A (en) * 1982-07-30 1985-03-05 Motorola, Inc. Low resistance buried power bus for integrated circuits
US4615746A (en) * 1983-09-29 1986-10-07 Kenji Kawakita Method of forming isolated island regions in a semiconductor substrate by selective etching and oxidation and devices formed therefrom
US4651410A (en) * 1984-12-18 1987-03-24 Semiconductor Division Thomson-Csf Components Corporation Method of fabricating regions of a bipolar microwave integratable transistor
US4835586A (en) * 1987-09-21 1989-05-30 Siliconix Incorporated Dual-gate high density fet
DK170189B1 (da) * 1990-05-30 1995-06-06 Yakov Safir Fremgangsmåde til fremstilling af halvlederkomponenter, samt solcelle fremstillet deraf
EP1372196A1 (de) * 2002-06-10 2003-12-17 ABB Schweiz AG Verfahren zum Ansteuern einer Leistungsdiode und Schaltungsanordnung zum Durchführen dieses Verfahrens
CN103594490A (zh) * 2012-08-13 2014-02-19 无锡维赛半导体有限公司 晶闸管及晶闸管封装件

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3716422A (en) * 1970-03-30 1973-02-13 Ibm Method of growing an epitaxial layer by controlling autodoping
FR2296263A1 (fr) * 1974-12-24 1976-07-23 Radiotechnique Compelec Procede de fabrication d'un dispositif semi-conducteur a effet de champ a canaux verticaux
US4036672A (en) * 1975-05-14 1977-07-19 Hitachi, Ltd. Method of making a junction type field effect transistor
US4067036A (en) * 1975-08-09 1978-01-03 Nippon Gakki Seizo Kabushiki Kaisha Junction field effect transistor of vertical type
US4101350A (en) * 1975-03-06 1978-07-18 Texas Instruments Incorporated Self-aligned epitaxial method for the fabrication of semiconductor devices

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3386865A (en) * 1965-05-10 1968-06-04 Ibm Process of making planar semiconductor devices isolated by encapsulating oxide filled channels
US3404450A (en) * 1966-01-26 1968-10-08 Westinghouse Electric Corp Method of fabricating an integrated circuit structure including unipolar transistor and bipolar transistor portions
US3938241A (en) * 1972-10-24 1976-02-17 Motorola, Inc. Vertical channel junction field-effect transistors and method of manufacture
JPS50138777A (en:Method) * 1974-04-22 1975-11-05
JPS5150581A (en) * 1974-10-29 1976-05-04 Mitsubishi Electric Corp Tategata 4 kyokusetsugogatadenkaikokatoranjisuta
US3999281A (en) * 1976-01-16 1976-12-28 The United States Of America As Represented By The Secretary Of The Air Force Method for fabricating a gridded Schottky barrier field effect transistor
US4181542A (en) * 1976-10-25 1980-01-01 Nippon Gakki Seizo Kabushiki Kaisha Method of manufacturing junction field effect transistors
JPS5368178A (en) * 1976-11-30 1978-06-17 Handotai Kenkyu Shinkokai Fet transistor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3716422A (en) * 1970-03-30 1973-02-13 Ibm Method of growing an epitaxial layer by controlling autodoping
FR2296263A1 (fr) * 1974-12-24 1976-07-23 Radiotechnique Compelec Procede de fabrication d'un dispositif semi-conducteur a effet de champ a canaux verticaux
US4101350A (en) * 1975-03-06 1978-07-18 Texas Instruments Incorporated Self-aligned epitaxial method for the fabrication of semiconductor devices
US4036672A (en) * 1975-05-14 1977-07-19 Hitachi, Ltd. Method of making a junction type field effect transistor
US4067036A (en) * 1975-08-09 1978-01-03 Nippon Gakki Seizo Kabushiki Kaisha Junction field effect transistor of vertical type

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/77 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0445008A1 (fr) * 1990-02-27 1991-09-04 Thomson-Csf Procédé de réalisation de dispositifs électroniques haute densité

Also Published As

Publication number Publication date
US4329772A (en) 1982-05-18
JPS55130176A (en) 1980-10-08
DE3012119A1 (de) 1980-10-02
FR2452784B1 (en:Method) 1985-03-08
DE3012119C2 (de) 1985-11-07

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Legal Events

Date Code Title Description
ST Notification of lapse