FR2452784A1 - Procede de fabrication d'un dispositif semi-conducteur et particulierement d'un thyristor - Google Patents
Procede de fabrication d'un dispositif semi-conducteur et particulierement d'un thyristorInfo
- Publication number
- FR2452784A1 FR2452784A1 FR8007106A FR8007106A FR2452784A1 FR 2452784 A1 FR2452784 A1 FR 2452784A1 FR 8007106 A FR8007106 A FR 8007106A FR 8007106 A FR8007106 A FR 8007106A FR 2452784 A1 FR2452784 A1 FR 2452784A1
- Authority
- FR
- France
- Prior art keywords
- conductivity
- mask
- zone
- semiconductor
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 239000012535 impurity Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7391—Gated diode structures
- H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1066—Gate region of field-effect devices with PN junction gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/026—Deposition thru hole in mask
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/088—J-Fet, i.e. junction field effect transistor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Thyristors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PROCEDE DE FABRICATION D'UN DISPOSITIF SEMI-CONDUCTEUR, SELON LEQUEL ON DEPOSE UNE COUCHE EPITAXIALE SUR L'UNE DES FACES PRINCIPALES D'UN SUPPORT SEMI-CONDUCTEUR 1 COMPORTANT UNE COUCHE D'UN CERTAIN TYPE DE CONDUCTIVITE AU VOISINAGE DE LADITE FACE PRINCIPALE, CE PROCEDE ETANT CARACTERISE PAR LE FAIT QU'IL CONSISTE: A RECOUVRIR UNE PARTIE DESDITES FACES PRINCIPALES A L'AIDE D'UN MASQUE, PRESENTANT UNE OUVERTURE; A INTRODUIRE DES ATOMES D'IMPURETES DANS LEDIT SUPPORT SEMI-CONDUCTEUR, POUR LE DOPER, PAR LADITE OUVERTURE PRATIQUEE DANS CE MASQUE, DE MANIERE A REALISER UNE ZONE SEMI-CONDUCTRICE 5 AYANT LA CONDUCTIVITE DU TYPE OPPOSE; A RECOUVRIR LA TOTALITE DE LA SURFACE EXPOSEE DE CETTE ZONE SEMI-CONDUCTRICE AU MOYEN D'UN AUTRE MASQUE, OU CACHE 3B, UNE SURFACE SUPERIEURE A CELLE DE LADITE FACE EXPOSEE DE LADITE ZONE; ET A DEPOSER UNE COUCHE EPITAXIALE 7E AYANT LEDIT PREMIER TYPE DE CONDUCTIVITE, SUR UNE PARTIE EXPOSEE DE LADITE FACE PRINCIPALE.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3703479A JPS55130176A (en) | 1979-03-30 | 1979-03-30 | Field effect semiconductor element and method of fabricating the same |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2452784A1 true FR2452784A1 (fr) | 1980-10-24 |
FR2452784B1 FR2452784B1 (fr) | 1985-03-08 |
Family
ID=12486334
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8007106A Granted FR2452784A1 (fr) | 1979-03-30 | 1980-03-28 | Procede de fabrication d'un dispositif semi-conducteur et particulierement d'un thyristor |
Country Status (4)
Country | Link |
---|---|
US (1) | US4329772A (fr) |
JP (1) | JPS55130176A (fr) |
DE (1) | DE3012119C2 (fr) |
FR (1) | FR2452784A1 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0445008A1 (fr) * | 1990-02-27 | 1991-09-04 | Thomson-Csf | Procédé de réalisation de dispositifs électroniques haute densité |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2480502A1 (fr) * | 1980-04-14 | 1981-10-16 | Thomson Csf | Dispositif semi-conducteur a grille profonde, son application a une diode blocable, et procede de fabrication |
US4637127A (en) * | 1981-07-07 | 1987-01-20 | Nippon Electric Co., Ltd. | Method for manufacturing a semiconductor device |
US4375124A (en) * | 1981-11-12 | 1983-03-01 | Gte Laboratories Incorporated | Power static induction transistor fabrication |
US4403396A (en) * | 1981-12-24 | 1983-09-13 | Gte Laboratories Incorporated | Semiconductor device design and process |
US4503451A (en) * | 1982-07-30 | 1985-03-05 | Motorola, Inc. | Low resistance buried power bus for integrated circuits |
US4615746A (en) * | 1983-09-29 | 1986-10-07 | Kenji Kawakita | Method of forming isolated island regions in a semiconductor substrate by selective etching and oxidation and devices formed therefrom |
US4651410A (en) * | 1984-12-18 | 1987-03-24 | Semiconductor Division Thomson-Csf Components Corporation | Method of fabricating regions of a bipolar microwave integratable transistor |
US4835586A (en) * | 1987-09-21 | 1989-05-30 | Siliconix Incorporated | Dual-gate high density fet |
DK170189B1 (da) * | 1990-05-30 | 1995-06-06 | Yakov Safir | Fremgangsmåde til fremstilling af halvlederkomponenter, samt solcelle fremstillet deraf |
EP1372196A1 (fr) * | 2002-06-10 | 2003-12-17 | ABB Schweiz AG | Méthode pour commander une diode de puissance et circuit pour mettre en oeuvre cette méthode |
CN103594490A (zh) * | 2012-08-13 | 2014-02-19 | 无锡维赛半导体有限公司 | 晶闸管及晶闸管封装件 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3716422A (en) * | 1970-03-30 | 1973-02-13 | Ibm | Method of growing an epitaxial layer by controlling autodoping |
FR2296263A1 (fr) * | 1974-12-24 | 1976-07-23 | Radiotechnique Compelec | Procede de fabrication d'un dispositif semi-conducteur a effet de champ a canaux verticaux |
US4036672A (en) * | 1975-05-14 | 1977-07-19 | Hitachi, Ltd. | Method of making a junction type field effect transistor |
US4067036A (en) * | 1975-08-09 | 1978-01-03 | Nippon Gakki Seizo Kabushiki Kaisha | Junction field effect transistor of vertical type |
US4101350A (en) * | 1975-03-06 | 1978-07-18 | Texas Instruments Incorporated | Self-aligned epitaxial method for the fabrication of semiconductor devices |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3386865A (en) * | 1965-05-10 | 1968-06-04 | Ibm | Process of making planar semiconductor devices isolated by encapsulating oxide filled channels |
US3404450A (en) * | 1966-01-26 | 1968-10-08 | Westinghouse Electric Corp | Method of fabricating an integrated circuit structure including unipolar transistor and bipolar transistor portions |
US3938241A (en) * | 1972-10-24 | 1976-02-17 | Motorola, Inc. | Vertical channel junction field-effect transistors and method of manufacture |
JPS50138777A (fr) * | 1974-04-22 | 1975-11-05 | ||
JPS5150581A (en) * | 1974-10-29 | 1976-05-04 | Mitsubishi Electric Corp | Tategata 4 kyokusetsugogatadenkaikokatoranjisuta |
US3999281A (en) * | 1976-01-16 | 1976-12-28 | The United States Of America As Represented By The Secretary Of The Air Force | Method for fabricating a gridded Schottky barrier field effect transistor |
US4181542A (en) * | 1976-10-25 | 1980-01-01 | Nippon Gakki Seizo Kabushiki Kaisha | Method of manufacturing junction field effect transistors |
JPS5368178A (en) * | 1976-11-30 | 1978-06-17 | Handotai Kenkyu Shinkokai | Fet transistor |
-
1979
- 1979-03-30 JP JP3703479A patent/JPS55130176A/ja active Pending
-
1980
- 1980-03-27 US US06/134,673 patent/US4329772A/en not_active Expired - Lifetime
- 1980-03-28 DE DE3012119A patent/DE3012119C2/de not_active Expired
- 1980-03-28 FR FR8007106A patent/FR2452784A1/fr active Granted
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3716422A (en) * | 1970-03-30 | 1973-02-13 | Ibm | Method of growing an epitaxial layer by controlling autodoping |
FR2296263A1 (fr) * | 1974-12-24 | 1976-07-23 | Radiotechnique Compelec | Procede de fabrication d'un dispositif semi-conducteur a effet de champ a canaux verticaux |
US4101350A (en) * | 1975-03-06 | 1978-07-18 | Texas Instruments Incorporated | Self-aligned epitaxial method for the fabrication of semiconductor devices |
US4036672A (en) * | 1975-05-14 | 1977-07-19 | Hitachi, Ltd. | Method of making a junction type field effect transistor |
US4067036A (en) * | 1975-08-09 | 1978-01-03 | Nippon Gakki Seizo Kabushiki Kaisha | Junction field effect transistor of vertical type |
Non-Patent Citations (1)
Title |
---|
EXBK/77 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0445008A1 (fr) * | 1990-02-27 | 1991-09-04 | Thomson-Csf | Procédé de réalisation de dispositifs électroniques haute densité |
Also Published As
Publication number | Publication date |
---|---|
FR2452784B1 (fr) | 1985-03-08 |
JPS55130176A (en) | 1980-10-08 |
DE3012119A1 (de) | 1980-10-02 |
DE3012119C2 (de) | 1985-11-07 |
US4329772A (en) | 1982-05-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |