FR2450519B1 - Element a semi-conducteur emetteur de lumiere et son procede de fabrication - Google Patents

Element a semi-conducteur emetteur de lumiere et son procede de fabrication

Info

Publication number
FR2450519B1
FR2450519B1 FR8004628A FR8004628A FR2450519B1 FR 2450519 B1 FR2450519 B1 FR 2450519B1 FR 8004628 A FR8004628 A FR 8004628A FR 8004628 A FR8004628 A FR 8004628A FR 2450519 B1 FR2450519 B1 FR 2450519B1
Authority
FR
France
Prior art keywords
manufacturing
light emitting
semiconductor element
emitting semiconductor
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8004628A
Other languages
English (en)
Other versions
FR2450519A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of FR2450519A1 publication Critical patent/FR2450519A1/fr
Application granted granted Critical
Publication of FR2450519B1 publication Critical patent/FR2450519B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Junction Field-Effect Transistors (AREA)
FR8004628A 1979-03-02 1980-02-29 Element a semi-conducteur emetteur de lumiere et son procede de fabrication Expired FR2450519B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2345379A JPS55117295A (en) 1979-03-02 1979-03-02 Semiconductor light emitting element and fabricating the same

Publications (2)

Publication Number Publication Date
FR2450519A1 FR2450519A1 (fr) 1980-09-26
FR2450519B1 true FR2450519B1 (fr) 1986-03-07

Family

ID=12110912

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8004628A Expired FR2450519B1 (fr) 1979-03-02 1980-02-29 Element a semi-conducteur emetteur de lumiere et son procede de fabrication

Country Status (7)

Country Link
US (1) US4361887A (fr)
JP (1) JPS55117295A (fr)
CA (1) CA1138561A (fr)
DE (1) DE3007809C2 (fr)
FR (1) FR2450519B1 (fr)
GB (1) GB2044532B (fr)
NL (1) NL8001222A (fr)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57128987A (en) * 1981-02-03 1982-08-10 Sumitomo Electric Ind Ltd Semiconductor device and its manufacture
JPS57132387A (en) * 1981-02-09 1982-08-16 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser device
US4527179A (en) * 1981-02-09 1985-07-02 Semiconductor Energy Laboratory Co., Ltd. Non-single-crystal light emitting semiconductor device
DE3106798A1 (de) * 1981-02-24 1982-09-09 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiteranordnung
EP0067566A3 (fr) * 1981-06-13 1985-08-07 Plessey Overseas Limited Détecteur ou générateur de lumiére intégré avec un amplificateur
JPS5821887A (ja) * 1981-08-03 1983-02-08 Agency Of Ind Science & Technol 半導体発光素子の製造方法
JPS5844769A (ja) * 1981-09-10 1983-03-15 Fujitsu Ltd 半導体装置
US4382275A (en) * 1981-12-07 1983-05-03 Sundstrand Corporation PWM Inverter circuit
US4513423A (en) * 1982-06-04 1985-04-23 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Arrangement for damping the resonance in a laser diode
JPS5978621A (ja) * 1982-10-26 1984-05-07 株式会社クボタ 非接触距離センサを用いた刈高さ制御方法
JPS59188988A (ja) * 1983-04-11 1984-10-26 Nec Corp 半導体レ−ザおよびその駆動方法
US4608696A (en) * 1983-06-08 1986-08-26 Trw Inc. Integrated laser and field effect transistor
US4578126A (en) * 1983-06-22 1986-03-25 Trw Inc. Liquid phase epitaxial growth process
JPS6027315A (ja) * 1983-07-26 1985-02-12 株式会社デンソー 自己診断機能を有する移動農機の刈高さ制御装置
JPS6027909A (ja) * 1983-07-26 1985-02-13 Nippon Denso Co Ltd 自己診断機能を有する車両の制御装置
US6211539B1 (en) * 1983-10-21 2001-04-03 Lucent Technologies Inc. Semi-insulated indium phosphide based compositions
EP0199852B1 (fr) * 1985-04-23 1990-08-29 Agfa-Gevaert N.V. Intégration monolithique d'éléments émetteurs de lumière et de l'électronique de contrôle
JPS61251185A (ja) * 1985-04-30 1986-11-08 Mitsubishi Electric Corp 半導体レ−ザと変調用電気素子の複合素子
FR2592739B1 (fr) * 1986-01-06 1988-03-18 Brillouet Francois Structure semi-conductrice monolithique d'un laser et d'un transistor a effet de champ et son procede de fabrication
DE3709301C2 (de) * 1987-03-20 2001-12-06 Daimler Chrysler Ag Monolithisch integrierte Senderanordnung
DE3709302C2 (de) * 1987-03-20 1998-07-02 Daimler Benz Ag Monolithisch integrierte Senderanordnung sowie Verfahren zu ihrer Herstellung
EP0293185B1 (fr) * 1987-05-26 1994-02-02 Kabushiki Kaisha Toshiba Dispositif laser à semi-conducteur et son procédé de fabrication
US5003359A (en) * 1989-12-29 1991-03-26 David Sarnoff Research Center, Inc. Optoelectronic integrated circuit
JP6209843B2 (ja) * 2013-03-29 2017-10-11 住友電気工業株式会社 半導体変調器を作製する方法、半導体変調器
JP6236947B2 (ja) * 2013-07-16 2017-11-29 住友電気工業株式会社 半導体光素子を製造する方法、および半導体光素子
KR20150031122A (ko) * 2013-09-13 2015-03-23 현대자동차주식회사 반도체 소자의 제조 방법
CN111969001A (zh) * 2019-05-20 2020-11-20 刁鸿浩 GaN基的单件集成的无机LED显示器

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2330310A1 (de) * 1973-06-14 1975-01-16 Siemens Ag Verfahren zur pulsmodulation von halbleiterlasern
JPS51145287A (en) * 1975-06-10 1976-12-14 Sharp Corp Semiconductor luminous device
US4065729A (en) * 1976-04-16 1977-12-27 California Institute Of Technology Monolithic PNPN injection laser optical repeater
US4212020A (en) * 1978-07-21 1980-07-08 California Institute Of Technology Solid state electro-optical devices on a semi-insulating substrate

Also Published As

Publication number Publication date
GB2044532A (en) 1980-10-15
GB2044532B (en) 1983-05-25
DE3007809A1 (de) 1980-09-18
JPS579239B2 (fr) 1982-02-20
NL8001222A (nl) 1980-09-04
FR2450519A1 (fr) 1980-09-26
US4361887A (en) 1982-11-30
DE3007809C2 (de) 1984-06-28
JPS55117295A (en) 1980-09-09
CA1138561A (fr) 1982-12-28

Similar Documents

Publication Publication Date Title
FR2450519B1 (fr) Element a semi-conducteur emetteur de lumiere et son procede de fabrication
FR2533755B1 (fr) Photodetecteur et son procede de fabrication
FR2601147B1 (fr) Materiau reflechissant la lumiere et procede de fabrication
FR2339959A1 (fr) Isolateur-coupleur optique, et son procede de fabrication
BE895124A (fr) Pochemedicale et son procede de fabrication
FR2433681B1 (fr) Courroie de transmission et son procede de fabrication
BE857125A (fr) Boitier de circuit integre et son procede de fabrication
FR2525956B1 (fr) Pellicule etiree a froid et son procede de fabrication
FR2349671A1 (fr) Feutre et son procede de fabrication
FR2339697A1 (fr) Etoffe composite et son procede de fabrication
FR2446728B1 (fr) Materiau decoratif et son procede de fabrication
FR2330149A1 (fr) Photodiode a semi-conducteur et procede de fabrication
FR2504957B1 (fr) Element de construction et son procede de fabrication
FR2606223B1 (fr) Laser a semiconducteur et son procede de fabrication
BE860704A (fr) Crible et son procede de fabrication
FR2542372B1 (fr) Culbuteur et son procede de fabrication
FR2430165B1 (fr) Plaquette a circuit et son procede de fabrication
FR2568725B1 (fr) Generateur thermo-electrique et son procede de fabrication
FR2492166B1 (fr) Transistor a effet de champ et son procede de fabrication
FR2493605B1 (fr) Element a jonction josephson et procede de fabrication
GB2053564B (en) Light emitting semiconductor device and method of manufacturing the same
MA20060A1 (fr) Structure de jonction de pli de pneumatique et son procede de fabrication.
FR2561477B1 (fr) Ecran protegeant de la lumiere et son procede de fabrication
FR2545269B1 (fr) Ecran electroluminescent et son procede de fabrication
FR2517074B1 (fr) Cable optique et son procede de fabrication

Legal Events

Date Code Title Description
ST Notification of lapse